DGD23892S28-13 Equivalent & Substitute Parts

Part Overview

The DGD23892S28-13 is a half-bridge gate driver IC manufactured by Diodes Incorporated, designed for driving IGBT and N-Channel MOSFET configurations in 3-phase applications. This device operates with a supply voltage range of 10V to 15V and features inverting input logic with a maximum bootstrap voltage of 600V. The part is classified as obsolete, making identification of compatible substitute components essential for ongoing system support and new design implementations.

Substiute Parts

DGD23892S28-13

Diodes IncorporatedIn Stock: 964DGD23892S28-13 Datasheet

Current PartRFQ

DGD2136MS28-13

Diodes IncorporatedIn Stock: 2244DGD2136MS28-13 Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

The DGD2136MS28-13 qualifies as a direct substitute for the DGD23892S28-13 based on the following critical parameters:

Matching Parameters:

• Manufacturer: Diodes Incorporated (same source)
• Driven Configuration: Half-Bridge (identical topology)
• Channel Type: 3-Phase (same channel architecture)
• Number of Drivers: 6 (identical driver count)
• Gate Type: IGBT, N-Channel MOSFET (compatible gate drive capability)
• Logic Voltage - VIL, VIH: 0.8V, 2.4V (identical logic thresholds)
• Input Type: Inverting (same input logic)
• High Side Voltage - Max (Bootstrap): 600V (identical maximum rating)
• Package / Case: 28-SOIC (0.295", 7.50mm Width) (identical physical package)
• Mounting Type: Surface Mount (same mounting method)
• RoHS Status: ROHS3 Compliant (equivalent compliance)
• Moisture Sensitivity Level (MSL): 1 (Unlimited) (identical MSL rating)

Differing Parameters (Within Acceptable Ranges):

• Voltage - Supply: DGD2136MS28-13 supports 10V ~ 20V (extended upper range vs. 10V ~ 15V)
• Current - Peak Output (Source, Sink): DGD2136MS28-13 provides 200mA, 350mA (reduced vs. 350mA, 650mA)
• Rise / Fall Time (Typ): DGD2136MS28-13 has 90ns, 35ns (slower rise time vs. 40ns, 25ns)
• Operating Temperature: DGD2136MS28-13 rated to 150°C (TJ) maximum (vs. -40°C ~ 150°C range)
• Product Status: DGD2136MS28-13 is Active (vs. Obsolete)

Parameter Comparison

Engineering Selection Recommendations

The DGD2136MS28-13 is the direct substitute for the obsolete DGD23892S28-13. Both devices are manufactured by Diodes Incorporated and maintain identical functional topology, package form factor, and regulatory compliance status (ROHS3 Compliant, REACH Unaffected).

The DGD2136MS28-13 offers the advantage of active product status, ensuring long-term availability and manufacturing support. The extended supply voltage range (10V ~ 20V vs. 10V ~ 15V) provides additional design flexibility for systems operating at higher supply voltages.

Applications requiring the full peak output current specifications of the original part (350mA source, 650mA sink) should evaluate whether the reduced output current of the substitute (200mA source, 350mA sink) meets system requirements. Similarly, designs sensitive to gate driver propagation delay should account for the increased rise and fall times of the substitute device.

The operating temperature specification of the DGD2136MS28-13 (maximum 150°C) is suitable for applications within this range. Systems requiring the full temperature range of the original part (-40°C to 150°C) should confirm compatibility with the substitute's maximum-only specification.

Frequently Asked Questions (FAQ)

Q: Can the DGD2136MS28-13 directly replace the DGD23892S28-13 in existing designs?

A: Yes, the DGD2136MS28-13 is a direct substitute. Both devices share identical half-bridge topology, 3-phase channel configuration, 6-driver architecture, inverting input logic, 600V bootstrap voltage rating, and 28-SOIC package. Pin-to-pin compatibility is maintained.

Q: What are the key differences between these two parts?

A: The primary differences are: (1) Supply voltage range is extended on the substitute (10V ~ 20V vs. 10V ~ 15V); (2) Peak output current is reduced on the substitute (200mA/350mA vs. 350mA/650mA); (3) Rise and fall times are slower on the substitute (90ns/35ns vs. 40ns/25ns); (4) Operating temperature specification differs (150°C maximum vs. -40°C to 150°C range); (5) Product status is Active for the substitute vs. Obsolete for the original.

Q: Is the reduced peak output current of the DGD2136MS28-13 a concern?

A: This depends on your application's gate drive current requirements. If your design operates within the substitute's current specifications (200mA source, 350mA sink), no design changes are required. Applications requiring higher peak currents should evaluate alternative solutions or confirm that average current demands remain within acceptable limits.

Q: Are there any packaging or mounting differences?

A: No. Both parts use the identical 28-SOIC (0.295", 7.50mm Width) surface mount package. PCB layouts and assembly processes require no modification.

Q: What is the impact of the slower rise and fall times?

A: The DGD2136MS28-13 has rise and fall times of 90ns and 35ns respectively, compared to 40ns and 25ns for the original. This affects gate driver propagation delay and switching characteristics. Applications with strict timing requirements should verify that the substitute's timing specifications remain acceptable for system performance.

Q: Are both parts RoHS and REACH compliant?

A: Yes. Both the DGD23892S28-13 and DGD2136MS28-13 are ROHS3 Compliant and REACH Unaffected, maintaining equivalent regulatory compliance.

Q: What is the moisture sensitivity level for these parts?

A: Both parts have Moisture Sensitivity Level (MSL) 1 (Unlimited), indicating no moisture sensitivity restrictions during storage or handling.