DGD2190S8-13 Equivalent & Substitute Parts

Part Overview

The DGD2190S8-13 is a half-bridge gate driver IC manufactured by Diodes Incorporated, designed for driving IGBT and N-Channel MOSFET configurations in power management applications. This part is classified as obsolete, making equivalent substitutes necessary for new designs and ongoing production requirements. The DGD2190S8-13 operates with a supply voltage range of 10V to 20V and delivers peak output currents of 4.5A for both source and sink configurations, with a maximum bootstrap voltage rating of 600V.

Key Parameters

Parameter	Value
Manufacturer	Diodes Incorporated
Part Number	DGD2190S8-13
Category	Power Management (PMIC)
Driven Configuration	Half-Bridge
Number of Drivers	2
Gate Type	IGBT, N-Channel MOSFET
Voltage - Supply	10V ~ 20V
Current - Peak Output (Source, Sink)	4.5A, 4.5A
High Side Voltage - Max (Bootstrap)	600V
Package / Case	8-SOIC (0.154", 3.90mm Width)
Operating Temperature	-40°C ~ 150°C (TJ)
Product Status	Obsolete
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution for the DGD2190S8-13 is determined by strict equivalence across the following critical parameters:

Driven configuration: Half-Bridge topology
Number of independent drivers: 2 channels
Gate type compatibility: IGBT and N-Channel MOSFET support
Peak output current: 4.5A source and sink capability
Bootstrap voltage rating: 600V maximum
Package form factor: 8-SOIC (0.154", 3.90mm Width)
Input type: Non-Inverting logic
Rise/Fall time performance: 25ns rise, 20ns fall (typical)

Two qualified substitutes meet these criteria: the DGD2190MS8-13 (Diodes Incorporated, active product status) and the FAN7390MX (onsemi, active product status). Both maintain functional and electrical equivalence within the specified parameter envelope.

Parameter Comparison

Parameter	DGD2190S8-13	DGD2190MS8-13	FAN7390MX
Manufacturer	Diodes Incorporated	Diodes Incorporated	onsemi
Product Status	Obsolete	Active	Active
Driven Configuration	Half-Bridge	Half-Bridge	Half-Bridge
Number of Drivers	2	2	2
Gate Type	IGBT, N-Channel MOSFET	IGBT, N-Channel MOSFET	IGBT, N-Channel MOSFET
Voltage - Supply	10V ~ 20V	10V ~ 20V	10V ~ 22V
Logic Voltage - VIL, VIH	0.8V, 2.5V	0.8V, 2.5V	1.2V, 2.5V
Current - Peak Output (Source, Sink)	4.5A, 4.5A	4.5A, 4.5A	4.5A, 4.5A
Input Type	Non-Inverting	Non-Inverting	Non-Inverting
High Side Voltage - Max (Bootstrap)	600V	600V	600V
Rise / Fall Time (Typ)	25ns, 20ns	25ns, 20ns	25ns, 20ns
Operating Temperature	-40°C ~ 150°C (TJ)	-40°C ~ 125°C (TA)	-40°C ~ 150°C (TJ)
Package / Case	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)
Packaging Type	Tube	Tape & Reel (TR)	Cut Tape (CT) & Digi-Reel®
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)	3 (168 Hours)	1 (Unlimited)

Engineering Selection Recommendations

The DGD2190MS8-13 is the manufacturer-recommended substitute from Diodes Incorporated. This part maintains identical electrical specifications and package form factor while offering active product status and improved supply availability. The DGD2190MS8-13 is suitable for direct replacement in applications currently using the obsolete DGD2190S8-13.

The FAN7390MX from onsemi provides an alternative substitute with equivalent functional performance. This part extends the supply voltage range to 22V and features superior moisture sensitivity characteristics (MSL 1 versus MSL 3). The FAN7390MX operates across the full temperature range of -40°C to 150°C (TJ), matching the original part specification. The logic voltage threshold (VIL) is specified at 1.2V compared to 0.8V for the DGD2190S8-13, which may require circuit evaluation in applications with marginal input signal levels.

Both substitutes maintain ROHS3 compliance and are actively manufactured, ensuring long-term availability for production and design requirements.

Frequently Asked Questions (FAQ)

Q: Can the DGD2190MS8-13 be used as a direct replacement for the DGD2190S8-13?

A: Yes. The DGD2190MS8-13 maintains identical electrical specifications, package form factor, and pin configuration. The primary difference is product status (active versus obsolete) and packaging format (Tape & Reel versus tube).

Q: What are the key differences between the DGD2190MS8-13 and FAN7390MX?

A: Both parts are functionally equivalent half-bridge gate drivers with identical peak output current, bootstrap voltage rating, and rise/fall time performance. The FAN7390MX offers an extended supply voltage range (10V to 22V versus 10V to 20V), superior moisture sensitivity (MSL 1 versus MSL 3), and a higher logic input threshold (VIL 1.2V versus 0.8V). Operating temperature ranges are equivalent at -40°C to 150°C.

Q: Are there any circuit design considerations when substituting these parts?

A: The FAN7390MX specifies a higher logic input low voltage threshold (VIL 1.2V). Applications with input signal levels between 0.8V and 1.2V require circuit evaluation to ensure reliable gate driver operation with the onsemi part.

Q: What packaging options are available for these substitutes?

A: The DGD2190MS8-13 is supplied in Tape & Reel format. The FAN7390MX is available in Cut Tape and Digi-Reel® packaging. Both maintain the 8-SOIC form factor with 0.154" width.

Q: Are all three parts RoHS compliant?

A: Yes. The DGD2190S8-13, DGD2190MS8-13, and FAN7390MX are all ROHS3 compliant and REACH unaffected.

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