DGD2106S8-13 Equivalent & Substitute Parts

Part Overview

The DGD2106S8-13 is a half-bridge gate driver IC manufactured by Diodes Incorporated, designed for driving IGBT and N-Channel MOSFET configurations in power management applications. This part is classified as obsolete, making equivalent substitutes necessary for new designs and ongoing production requirements. The DGD2106S8-13 operates with a supply voltage range of 10V to 20V and supports bootstrap voltages up to 600V, making it suitable for half-bridge topologies in industrial and consumer power conversion circuits.

Substiute Parts

DGD2106S8-13

Diodes IncorporatedIn Stock: 18121DGD2106S8-13 Datasheet

Current PartRFQ

DGD2106MS8-13

Diodes IncorporatedIn Stock: 2239DGD2106MS8-13 Datasheet

DirectRFQ

IR2106STRPBF

Infineon TechnologiesIn Stock: 47790IR2106STRPBF Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution for the DGD2106S8-13 is determined by strict alignment of the following electrical and mechanical parameters:

• Half-bridge driven configuration with 2 independent or synchronous drivers
• Gate type compatibility: IGBT and N-Channel MOSFET support
• Supply voltage range: 10V ~ 20V
• Bootstrap voltage capability: 600V maximum
• Non-inverting input logic
• 8-SOIC package form factor (0.154", 3.90mm width)
• RoHS3 compliance and surface mount technology

Substitute parts must maintain these core specifications to ensure functional and mechanical compatibility in existing circuit designs.

Parameter Comparison

Engineering Selection Recommendations

DGD2106MS8-13 is the direct equivalent from Diodes Incorporated, maintaining identical electrical specifications and package form factor. This part is actively produced and represents the primary substitution path for obsolete DGD2106S8-13 designs. Both parts share the same base product number (DGD2106) and are ROHS3 compliant.

IR2106STRPBF from Infineon Technologies is a functional alternative that maintains half-bridge configuration, gate type compatibility, and bootstrap voltage capability. This part differs in peak output current specifications (200mA source, 350mA sink versus 290mA source, 600mA sink) and rise/fall time characteristics (150ns rise, 50ns fall versus 100ns rise, 35ns fall). The IR2106STRPBF is actively produced and ROHS3 compliant, suitable for applications where the specified current and timing parameters are acceptable.

Frequently Asked Questions (FAQ)

Q: Can DGD2106MS8-13 be used as a direct replacement for DGD2106S8-13?

A: Yes. Both parts are manufactured by Diodes Incorporated, share identical electrical specifications, and use the same 8-SOIC package. The primary difference is product status: DGD2106S8-13 is obsolete while DGD2106MS8-13 is actively produced.

Q: What are the key differences between DGD2106S8-13 and IR2106STRPBF?

A: Both maintain half-bridge configuration and 600V bootstrap capability. The IR2106STRPBF has lower peak output current (200mA source, 350mA sink) and slower rise/fall times (150ns, 50ns) compared to the DGD2106S8-13 (290mA source, 600mA sink; 100ns, 35ns). Logic voltage thresholds also differ slightly (0.8V, 2.9V versus 0.6V, 2.5V).

Q: Are all three parts pin-compatible?

A: All three parts use the 8-SOIC package with identical physical dimensions (0.154", 3.90mm width). Pin compatibility requires verification against specific datasheet pinouts for your application circuit.

Q: Do all substitute parts meet the same compliance standards?

A: Yes. DGD2106S8-13, DGD2106MS8-13, and IR2106STRPBF are all ROHS3 compliant and REACH unaffected, meeting the same environmental and regulatory requirements.

Q: Which substitute should be selected for new designs?

A: DGD2106MS8-13 is recommended for new designs as it maintains identical specifications to the obsolete DGD2106S8-13 and is actively produced by Diodes Incorporated. IR2106STRPBF is suitable when the specified current and timing parameters are acceptable for the application.