DGD2103AS8-13 Equivalent & Substitute Parts

Part Overview

The DGD2103AS8-13 is a half-bridge gate driver IC manufactured by Diodes Incorporated, designed for driving IGBT and N-Channel MOSFET configurations in power management applications. This device features independent dual-channel architecture with inverting and non-inverting input types, supporting supply voltages from 10V to 20V and bootstrap voltage up to 600V.

The DGD2103AS8-13 is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain reliability, and support ongoing production requirements for applications utilizing this gate driver topology.

Substiute Parts

DGD2103AS8-13
Diodes IncorporatedIn Stock: 63038DGD2103AS8-13 Datasheet
DGD2103AS8-13
Current Part
DGD2103MS8-13
Diodes IncorporatedIn Stock: 61280DGD2103MS8-13 Datasheet
DGD2103MS8-13
Direct
IR2103STRPBF
Infineon TechnologiesIn Stock: 65250IR2103STRPBF Datasheet
IR2103STRPBF
Direct

Key Parameters

Parameter Value
Driven Configuration Half-Bridge
Channel Type Independent
Number of Drivers 2
Gate Type IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 2.5V
Current - Peak Output (Source, Sink) 290mA, 600mA
Input Type Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap) 600V
Operating Temperature -40°C ~ 150°C (TJ)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution eligibility for the DGD2103AS8-13 is determined by the following critical parameters:

  • Driven Configuration: Must be half-bridge topology
  • Channel Type: Must be independent dual-channel
  • Gate Type: Must support IGBT and N-Channel MOSFET
  • Supply Voltage Range: Must accommodate 10V ~ 20V operation
  • Bootstrap Voltage: Must support 600V maximum
  • Package: Must be 8-SOIC form factor with equivalent pin compatibility
  • Input Type: Must provide inverting and non-inverting configurations
  • Operating Temperature Range: Must cover -40°C ~ 150°C

The identified substitute parts meet these core electrical and mechanical requirements while maintaining functional equivalence in half-bridge gate driver applications.

Parameter Comparison

Parameter DGD2103AS8-13 DGD2103MS8-13 IR2103STRPBF
Manufacturer Diodes Incorporated Diodes Incorporated Infineon Technologies
Product Status Obsolete Active Active
Driven Configuration Half-Bridge Half-Bridge Half-Bridge
Channel Type Independent Independent Independent
Number of Drivers 2 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V 10V ~ 20V 10V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 2.5V 0.8V, 2.5V 0.8V, 3V
Current - Peak Output (Source, Sink) 290mA, 600mA 290mA, 600mA 210mA, 360mA
Input Type Inverting, Non-Inverting Inverting, Non-Inverting Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap) 600V 600V 600V
Rise / Fall Time (Typ) 100ns, 50ns 70ns, 35ns 100ns, 50ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount Surface Mount Surface Mount
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours) 3 (168 Hours) 2 (1 Year)

Engineering Selection Recommendations

DGD2103MS8-13 is the primary substitute for the obsolete DGD2103AS8-13. Both parts are manufactured by Diodes Incorporated and share identical electrical specifications. The DGD2103MS8-13 is currently in active production status, ensuring supply chain availability. The packaging difference (Tape & Reel versus bulk) does not affect electrical performance. This part provides direct functional replacement with improved rise and fall time characteristics (70ns/35ns versus 100ns/50ns).

IR2103STRPBF is an alternative substitute manufactured by Infineon Technologies. This part maintains compatibility with the half-bridge gate driver topology and supports the same supply voltage range and bootstrap voltage specifications. The IR2103STRPBF exhibits lower peak output current specifications (210mA source, 360mA sink versus 290mA/600mA) and higher logic input threshold (VIH 3V versus 2.5V). The IR2103STRPBF carries MSL 2 rating, providing superior moisture protection compared to MSL 3. Both substitute parts are ROHS3 compliant and REACH unaffected.

Frequently Asked Questions (FAQ)

Q: Can DGD2103MS8-13 directly replace DGD2103AS8-13 in existing designs?

A: Yes. The DGD2103MS8-13 maintains identical electrical specifications and 8-SOIC package compatibility. The primary difference is product status (active versus obsolete) and packaging format (Tape & Reel). No circuit modifications are required.

Q: What are the differences between DGD2103MS8-13 and IR2103STRPBF?

A: Both parts function as half-bridge gate drivers with independent dual channels. Key differences include: peak output current (DGD2103MS8-13 provides 290mA/600mA versus IR2103STRPBF at 210mA/360mA), logic input threshold (DGD2103MS8-13 at 2.5V VIH versus IR2103STRPBF at 3V), and rise/fall time performance (DGD2103MS8-13 at 70ns/35ns versus IR2103STRPBF at 100ns/50ns). Both support 10V-20V supply and 600V bootstrap voltage.

Q: Are there package compatibility concerns when substituting these parts?

A: All three parts use 8-SOIC (0.154", 3.90mm Width) surface mount packaging. Pin configuration and footprint are compatible. No PCB layout modifications are necessary.

Q: Which substitute part should be selected for new designs?

A: DGD2103MS8-13 is recommended for new designs due to active production status, identical electrical specifications to the original part, and superior switching performance. IR2103STRPBF is suitable where Infineon device qualification is required or where lower peak output current specifications are acceptable.

Q: Do these parts have different moisture sensitivity requirements?

A: DGD2103MS8-13 carries MSL 3 (168 hours), while IR2103STRPBF carries MSL 2 (1 year). IR2103STRPBF provides extended moisture protection for applications with extended storage or humid environment exposure.

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