DGD1503S8-13 Equivalent & Substitute Parts

Part Overview

The DGD1503S8-13 is a half-bridge gate driver IC manufactured by Diodes Incorporated, designed for driving N-Channel MOSFETs in half-bridge configurations. This device features independent inverting and non-inverting input channels with a maximum bootstrap voltage of 250V and operates across a temperature range of -40°C to 150°C (junction temperature).

The DGD1503S8-13 is classified as obsolete. Identifying suitable substitute parts is necessary to maintain design continuity and ensure component availability for new production runs and system updates.

Substiute Parts

DGD1503S8-13
Diodes IncorporatedIn Stock: 115994DGD1503S8-13 Datasheet
DGD1503S8-13
Current Part
DGD2003S8-13
Diodes IncorporatedIn Stock: 31958DGD2003S8-13 Datasheet
DGD2003S8-13
MFR Recommended
DGD2103MS8-13
Diodes IncorporatedIn Stock: 61280DGD2103MS8-13 Datasheet
DGD2103MS8-13
MFR Recommended

Key Parameters

Parameter Value
Manufacturer Diodes Incorporated
Category Power Management (PMIC)
Driven Configuration Half-Bridge
Number of Drivers 2
Gate Type N-Channel MOSFET
Voltage - Supply 10V ~ 20V
Current - Peak Output (Source, Sink) 290mA, 600mA
High Side Voltage - Max (Bootstrap) 250V
Package / Case 8-SOIC (0.154", 3.90mm Width)
Operating Temperature -40°C ~ 150°C (TJ)
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the DGD1503S8-13 are identified based on the following critical parameters that determine functional compatibility:

  • Half-bridge driven configuration with 2 independent drivers
  • Supply voltage range of 10V to 20V
  • Peak output current specifications: 290mA source, 600mA sink
  • Logic voltage thresholds: VIL 0.8V, VIH 2.5V
  • 8-SOIC surface mount package
  • ROHS3 compliance and identical MSL rating (3, 168 Hours)

The substitute parts maintain these core electrical and mechanical specifications while offering active product status and enhanced availability.

Parameter Comparison

Parameter DGD1503S8-13 DGD2003S8-13 DGD2103MS8-13
Product Status Obsolete Active Active
Driven Configuration Half-Bridge Half-Bridge Half-Bridge
Channel Type Independent Synchronous Independent
Number of Drivers 2 2 2
Gate Type N-Channel MOSFET N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V 10V ~ 20V 10V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 2.5V 0.8V, 2.5V 0.8V, 2.5V
Current - Peak Output (Source, Sink) 290mA, 600mA 290mA, 600mA 290mA, 600mA
Input Type Inverting, Non-Inverting Non-Inverting Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap) 250V 200V 600V
Rise / Fall Time (Typ) 70ns, 35ns 70ns, 35ns 70ns, 35ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 125°C (TA) -40°C ~ 150°C (TJ)
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
MSL Rating 3 (168 Hours) 3 (168 Hours) 3 (168 Hours)

Engineering Selection Recommendations

Both DGD2003S8-13 and DGD2103MS8-13 are active products from Diodes Incorporated with ROHS3 compliance and identical MSL ratings, making them suitable for replacing the obsolete DGD1503S8-13.

DGD2003S8-13 is recommended for applications requiring non-inverting input configuration only, with a maximum bootstrap voltage of 200V. This part is suitable for standard half-bridge topologies operating within this voltage specification.

DGD2103MS8-13 is recommended for applications requiring both inverting and non-inverting input flexibility, with an extended maximum bootstrap voltage of 600V. This part supports both N-Channel MOSFET and IGBT gate driving, providing broader application coverage. The operating temperature range extends to 150°C (junction temperature), matching the original DGD1503S8-13 specification.

Frequently Asked Questions (FAQ)

Q: Can DGD2003S8-13 directly replace DGD1503S8-13 in all applications?

A: DGD2003S8-13 maintains identical supply voltage, output current, logic voltage, and package specifications. However, it features synchronous channel configuration and non-inverting input only, compared to the independent channels and dual input types of DGD1503S8-13. Additionally, its maximum bootstrap voltage is 200V versus 250V. Verify your circuit topology and input signal requirements before substitution.

Q: What are the key differences between DGD2003S8-13 and DGD2103MS8-13?

A: DGD2003S8-13 provides synchronous channel configuration with non-inverting inputs and 200V maximum bootstrap voltage. DGD2103MS8-13 provides independent channel configuration with inverting and non-inverting inputs and 600V maximum bootstrap voltage. Both maintain identical supply voltage, output current, and package specifications. Select based on your circuit's input signal type and maximum voltage requirements.

Q: Are all substitute parts in the same package?

A: Yes. DGD1503S8-13, DGD2003S8-13, and DGD2103MS8-13 are all housed in 8-SOIC (0.154", 3.90mm Width) surface mount packages, ensuring mechanical compatibility on existing PCB layouts.

Q: Do the substitute parts meet the same compliance standards?

A: Yes. All three parts are ROHS3 compliant with identical MSL ratings of 3 (168 Hours), REACH unaffected status, and EAR99 ECCN classification.

Q: What is the temperature operating range difference?

A: DGD1503S8-13 and DGD2103MS8-13 both operate from -40°C to 150°C (junction temperature). DGD2003S8-13 operates from -40°C to 125°C (ambient temperature). For applications requiring the full -40°C to 150°C range, DGD2103MS8-13 is the appropriate substitute.

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