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DGD1503S8-13 Equivalent & Substitute Parts
Part Overview
The DGD1503S8-13 is a half-bridge gate driver IC manufactured by Diodes Incorporated, designed for driving N-Channel MOSFETs in half-bridge configurations. This device features independent inverting and non-inverting input channels with a maximum bootstrap voltage of 250V and operates across a temperature range of -40°C to 150°C (junction temperature).
The DGD1503S8-13 is classified as obsolete. Identifying suitable substitute parts is necessary to maintain design continuity and ensure component availability for new production runs and system updates.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Category | Power Management (PMIC) |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Voltage - Supply | 10V ~ 20V |
| Current - Peak Output (Source, Sink) | 290mA, 600mA |
| High Side Voltage - Max (Bootstrap) | 250V |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| RoHS Status | ROHS3 Compliant |
Substitute Part Grouping Explanation
Substitute parts for the DGD1503S8-13 are identified based on the following critical parameters that determine functional compatibility:
- Half-bridge driven configuration with 2 independent drivers
- Supply voltage range of 10V to 20V
- Peak output current specifications: 290mA source, 600mA sink
- Logic voltage thresholds: VIL 0.8V, VIH 2.5V
- 8-SOIC surface mount package
- ROHS3 compliance and identical MSL rating (3, 168 Hours)
The substitute parts maintain these core electrical and mechanical specifications while offering active product status and enhanced availability.
Parameter Comparison
| Parameter | DGD1503S8-13 | DGD2003S8-13 | DGD2103MS8-13 |
|---|---|---|---|
| Product Status | Obsolete | Active | Active |
| Driven Configuration | Half-Bridge | Half-Bridge | Half-Bridge |
| Channel Type | Independent | Synchronous | Independent |
| Number of Drivers | 2 | 2 | 2 |
| Gate Type | N-Channel MOSFET | N-Channel MOSFET | IGBT, N-Channel MOSFET |
| Voltage - Supply | 10V ~ 20V | 10V ~ 20V | 10V ~ 20V |
| Logic Voltage - VIL, VIH | 0.8V, 2.5V | 0.8V, 2.5V | 0.8V, 2.5V |
| Current - Peak Output (Source, Sink) | 290mA, 600mA | 290mA, 600mA | 290mA, 600mA |
| Input Type | Inverting, Non-Inverting | Non-Inverting | Inverting, Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 250V | 200V | 600V |
| Rise / Fall Time (Typ) | 70ns, 35ns | 70ns, 35ns | 70ns, 35ns |
| Operating Temperature | -40°C ~ 150°C (TJ) | -40°C ~ 125°C (TA) | -40°C ~ 150°C (TJ) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| MSL Rating | 3 (168 Hours) | 3 (168 Hours) | 3 (168 Hours) |
Engineering Selection Recommendations
Both DGD2003S8-13 and DGD2103MS8-13 are active products from Diodes Incorporated with ROHS3 compliance and identical MSL ratings, making them suitable for replacing the obsolete DGD1503S8-13.
DGD2003S8-13 is recommended for applications requiring non-inverting input configuration only, with a maximum bootstrap voltage of 200V. This part is suitable for standard half-bridge topologies operating within this voltage specification.
DGD2103MS8-13 is recommended for applications requiring both inverting and non-inverting input flexibility, with an extended maximum bootstrap voltage of 600V. This part supports both N-Channel MOSFET and IGBT gate driving, providing broader application coverage. The operating temperature range extends to 150°C (junction temperature), matching the original DGD1503S8-13 specification.
Frequently Asked Questions (FAQ)
Q: Can DGD2003S8-13 directly replace DGD1503S8-13 in all applications?
A: DGD2003S8-13 maintains identical supply voltage, output current, logic voltage, and package specifications. However, it features synchronous channel configuration and non-inverting input only, compared to the independent channels and dual input types of DGD1503S8-13. Additionally, its maximum bootstrap voltage is 200V versus 250V. Verify your circuit topology and input signal requirements before substitution.
Q: What are the key differences between DGD2003S8-13 and DGD2103MS8-13?
A: DGD2003S8-13 provides synchronous channel configuration with non-inverting inputs and 200V maximum bootstrap voltage. DGD2103MS8-13 provides independent channel configuration with inverting and non-inverting inputs and 600V maximum bootstrap voltage. Both maintain identical supply voltage, output current, and package specifications. Select based on your circuit's input signal type and maximum voltage requirements.
Q: Are all substitute parts in the same package?
A: Yes. DGD1503S8-13, DGD2003S8-13, and DGD2103MS8-13 are all housed in 8-SOIC (0.154", 3.90mm Width) surface mount packages, ensuring mechanical compatibility on existing PCB layouts.
Q: Do the substitute parts meet the same compliance standards?
A: Yes. All three parts are ROHS3 compliant with identical MSL ratings of 3 (168 Hours), REACH unaffected status, and EAR99 ECCN classification.
Q: What is the temperature operating range difference?
A: DGD1503S8-13 and DGD2103MS8-13 both operate from -40°C to 150°C (junction temperature). DGD2003S8-13 operates from -40°C to 125°C (ambient temperature). For applications requiring the full -40°C to 150°C range, DGD2103MS8-13 is the appropriate substitute.
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