DGD0506FN-7 Equivalent & Substitute Parts

Part Overview

The DGD0506FN-7 is a half-bridge gate driver IC manufactured by Diodes Incorporated, designed for driving N-channel MOSFETs in synchronous half-bridge configurations. This device operates with a supply voltage range of 8V to 14V and delivers peak output currents of 1.5A (source) and 2.5A (sink). The part is currently classified as obsolete, making identification of compatible substitute components essential for ongoing system support and new design implementations.

Substiute Parts

DGD0506FN-7

Diodes IncorporatedIn Stock: 949DGD0506FN-7 Datasheet

Current PartRFQ

DGD0506AFN-7

Diodes IncorporatedIn Stock: 3790DGD0506AFN-7 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the DGD0506FN-7 is determined by the following critical parameters:

• Driven Configuration: Must be half-bridge
• Number of Drivers: Must be 2
• Gate Type: Must be N-Channel MOSFET
• Voltage - Supply: Must support 8V ~ 14V range
• High Side Voltage - Max (Bootstrap): Must support minimum 50V
• Package / Case: Must be 10-WFDFN Exposed Pad
• RoHS Status: Must maintain ROHS3 compliance

The DGD0506AFN-7 meets all substitution criteria. While differences exist in logic voltage thresholds, peak sink current, input type, and operating temperature range, these variations remain within acceptable tolerance for half-bridge gate driver applications using this package form factor.

Parameter Comparison

Engineering Selection Recommendations

The DGD0506AFN-7 is the qualified substitute for the obsolete DGD0506FN-7. Selection of the substitute part is supported by:

• Identical supply voltage range (8V ~ 14V) and bootstrap voltage rating (50V)
• Matching package form factor (10-WFDFN Exposed Pad) enabling direct PCB compatibility
• Equivalent driver configuration (2-channel half-bridge, N-channel MOSFET)
• Identical rise and fall time characteristics (17ns, 12ns)
• Active product status ensuring continued availability and manufacturing support
• ROHS3 compliance maintained across both parts
• Equivalent source current capability (1.5A) with sink current of 2A versus 2.5A on the original part

The DGD0506AFN-7 is suitable for applications where the original DGD0506FN-7 was specified, provided that the sink current requirement does not exceed 2A and the logic input interface supports CMOS/TTL thresholds.

Frequently Asked Questions (FAQ)

Q: Can the DGD0506AFN-7 directly replace the DGD0506FN-7 without PCB modifications?

A: Yes. Both parts use the 10-WFDFN Exposed Pad package with identical pinout and footprint, enabling direct substitution without PCB layout changes.

Q: What is the difference in logic voltage thresholds between these parts?

A: The DGD0506FN-7 specifies VIL/VIH of 1V/2.5V with non-inverting input type. The DGD0506AFN-7 specifies VIL/VIH of 0.8V/2.4V with CMOS/TTL input type. Both thresholds are compatible with standard logic signal levels in half-bridge gate driver applications.

Q: Is there a performance impact from the reduced sink current on the DGD0506AFN-7?

A: The DGD0506AFN-7 provides 2A peak sink current versus 2.5A on the original part. This difference is acceptable for applications where the gate charge requirements of the driven MOSFETs do not exceed 2A during switching transitions.

Q: Why is the DGD0506FN-7 marked as obsolete?

A: The DGD0506FN-7 has been discontinued by the manufacturer. The DGD0506AFN-7 represents the active product line continuation with equivalent functional specifications.

Q: Are both parts RoHS compliant?

A: Yes. Both the DGD0506FN-7 and DGD0506AFN-7 are ROHS3 compliant and REACH unaffected.

Q: What is the operating temperature range difference?

A: The DGD0506FN-7 operates from -40°C to 150°C (junction temperature). The DGD0506AFN-7 operates from -40°C to 125°C (ambient temperature). Application thermal management must ensure the DGD0506AFN-7 junction temperature remains within specification.