DG2011DXA-T1-E3 Equivalent & Substitute Parts

Part Overview

The DG2011DXA-T1-E3 is a single-circuit SPDT (Single Pole Double Throw) analog switch manufactured by Vishay Siliconix, designed for signal routing and multiplexing applications in low-voltage systems. The device operates across a supply voltage range of 1.8V to 5.5V and is packaged in SC-89-6 (SOT-666) surface mount configuration.

This part is classified as obsolete. Identifying equivalent and substitute components is necessary to ensure design continuity, maintain supply chain reliability, and support long-term product availability for applications currently utilizing this switch.

Substiute Parts

DG2011DXA-T1-E3
Vishay SiliconixIn Stock: 45141DG2011DXA-T1-E3 Datasheet
DG2011DXA-T1-E3
Current Part
DG4157EDN-T1-GE4
Vishay SiliconixIn Stock: 120231DG4157EDN-T1-GE4 Datasheet
DG4157EDN-T1-GE4
MFR Recommended

Key Parameters

Parameter Value
Switch Circuit Type SPDT (2:1 Multiplexer)
Number of Circuits 1
On-State Resistance (Max) 2.7Ω
Channel-to-Channel Matching (ΔRon Max) 200mΩ
Supply Voltage Range (Single) 1.8V ~ 5.5V
Switch Time (Ton/Toff Max) 75ns / 59ns
Charge Injection 2pC
Channel Capacitance (Off-State) 29pF
Leakage Current (Max) 1nA
Operating Temperature -40°C ~ 85°C
Package Type SOT-563, SOT-666
RoHS Status ROHS3 Compliant
MSL Rating 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the DG2011DXA-T1-E3 is determined by the following core electrical and mechanical parameters:

  • Switch topology: SPDT configuration with 2:1 multiplexing capability
  • Single-circuit requirement: One independent switch circuit
  • Supply voltage compatibility: Operating range must encompass or be compatible with 1.8V ~ 5.5V
  • On-state resistance: Maximum allowable resistance for signal integrity in the application
  • Switching speed: Ton and Toff specifications for timing-critical applications
  • Package compatibility: Surface mount form factor suitable for existing PCB layouts
  • Compliance standards: RoHS3 compliance and MSL rating for manufacturing and environmental requirements

The DG4157EDN-T1-GE4 qualifies as a substitute based on matching these core parameters while offering improved electrical performance characteristics.

Parameter Comparison

Parameter DG2011DXA-T1-E3 DG4157EDN-T1-GE4
Manufacturer Vishay Siliconix Vishay Siliconix
Switch Circuit SPDT SPDT
Multiplexer Configuration 2:1 2:1
Number of Circuits 1 1
On-State Resistance (Max) 2.7Ω 1.2Ω
Channel-to-Channel Matching (ΔRon Max) 200mΩ 120mΩ
Supply Voltage Range (Single) 1.8V ~ 5.5V 1.65V ~ 5.5V
Switch Time Ton (Max) 75ns 32ns
Switch Time Toff (Max) 59ns 28ns
Charge Injection 2pC -5pC
Leakage Current (Max) 1nA 3nA
Operating Temperature -40°C ~ 85°C -40°C ~ 85°C
Mounting Type Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 6-XFDFN
RoHS Status ROHS3 Compliant ROHS3 Compliant
MSL Rating 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

The DG4157EDN-T1-GE4 is the manufacturer-recommended substitute for the obsolete DG2011DXA-T1-E3. Both devices are manufactured by Vishay Siliconix and maintain ROHS3 compliance and MSL Level 1 ratings, ensuring compatibility with current manufacturing and environmental standards.

The DG4157EDN-T1-GE4 offers superior electrical performance with lower on-state resistance (1.2Ω vs. 2.7Ω), faster switching times (32ns/28ns vs. 75ns/59ns), and improved channel matching (120mΩ vs. 200mΩ). The supply voltage range of 1.65V ~ 5.5V is compatible with applications designed for the original part's 1.8V ~ 5.5V specification.

The primary design consideration is package transition from SC-89-6 (SOT-666) to 6-µDFN (1x1). PCB layout modifications are required to accommodate the different footprint geometry.

Frequently Asked Questions (FAQ)

Q: Can the DG4157EDN-T1-GE4 directly replace the DG2011DXA-T1-E3 without circuit modifications?

A: Electrical substitution is valid. The DG4157EDN-T1-GE4 maintains SPDT 2:1 multiplexer functionality with compatible supply voltage range and operating temperature. However, the package change from SOT-666 to 6-µDFN requires PCB footprint redesign and layout modifications.

Q: What are the key electrical differences between these parts?

A: The DG4157EDN-T1-GE4 provides lower on-state resistance (1.2Ω vs. 2.7Ω), faster switching performance (32ns/28ns vs. 75ns/59ns), and tighter channel matching (120mΩ vs. 200mΩ). These improvements enhance signal integrity and reduce switching delays in multiplexing applications.

Q: Are both parts compliant with current manufacturing standards?

A: Yes. Both the DG2011DXA-T1-E3 and DG4157EDN-T1-GE4 are ROHS3 compliant with MSL Level 1 ratings, meeting current environmental and manufacturing requirements.

Q: What is the primary limitation when substituting these parts?

A: Package incompatibility is the primary design constraint. The original SC-89-6 (SOT-666) footprint differs from the 6-µDFN (1x1) package of the substitute. PCB redesign is necessary to accommodate the new package geometry and pin configuration.

Q: Is the supply voltage range compatible for all applications?

A: The DG4157EDN-T1-GE4 operates at 1.65V minimum versus 1.8V for the original part. Applications operating at 1.65V ~ 1.8V will function with the substitute but not with the original. Applications above 1.8V are compatible with both devices.

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