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DF10ST-G Bridge Rectifier Equivalent & Substitute Parts
Part Overview
The DF10ST-G is a single-phase bridge rectifier manufactured by Comchip Technology, rated for 1 kV peak reverse voltage and 1 A average rectified current in a 4-SMD surface mount package. This component is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. Substitute parts maintain identical electrical specifications and mechanical compatibility while offering active product status and improved availability.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Diode Type | Single Phase |
| Voltage - Peak Reverse (Max) | 1 kV |
| Current - Average Rectified (Io) | 1 A |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 1000 V |
| Operating Temperature Range | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 4-SMD, Gull Wing |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Substitute Part Grouping Explanation
Substitution eligibility for the DF10ST-G is determined by the following mandatory parameters:
- Diode Type: Single Phase
- Voltage - Peak Reverse (Max): 1 kV
- Current - Average Rectified (Io): 1 A
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Gull Wing
- Operating Temperature Range: -55°C ~ 150°C (TJ)
Substitute parts are grouped into two categories:
MFR Recommended: DF10S-HF from Comchip Technology maintains the original manufacturer lineage with active product status and identical electrical performance.
Parametric Equivalents: Parts from alternative manufacturers (Diodes Incorporated, SMC Diode Solutions, Panjit International Inc., MDD, Taiwan Semiconductor Corporation) that meet or exceed all core electrical and mechanical specifications. These parts are functionally interchangeable within the defined parameter constraints.
Parameter Comparison
| Part Number | Manufacturer | Vr (Max) | Io | Vf (Max) @ If | Ir @ Vr | Temp Range | Package | Status | RoHS |
|---|---|---|---|---|---|---|---|---|---|
| DF10ST-G | Comchip Technology | 1 kV | 1 A | 1.1 V @ 1 A | 10 µA @ 1000 V | -55°C ~ 150°C | 4-SMD, Gull Wing | Obsolete | ROHS3 |
| DF10S-HF | Comchip Technology | 1 kV | 1 A | 1.1 V @ 1 A | 10 µA @ 1000 V | -55°C ~ 150°C | 4-SMD, Gull Wing | Active | ROHS3 |
| ABS10-HF | Comchip Technology | 1 kV | 1 A | 1.1 V @ 1 A | 5 µA @ 1000 V | -55°C ~ 150°C | 4-SMD, Gull Wing | Active | ROHS3 |
| ABS10A-13 | Diodes Incorporated | 1 kV | 1 A | 1.1 V @ 1 A | 5 µA @ 1000 V | -55°C ~ 150°C | 4-SMD, Gull Wing | Active | ROHS3 |
| ABS10U | SMC Diode Solutions | 1 kV | 1 A | 1.1 V @ 1 A | 5 µA @ 1000 V | -55°C ~ 150°C | 4-SMD, Gull Wing | Active | ROHS3 |
| B1010S_R2_00001 | Panjit International Inc. | 1 kV | 1 A | 1.1 V @ 1 A | 5 µA @ 1000 V | -55°C ~ 150°C | 4-SMD, Gull Wing | Active | ROHS3 |
| DB107S | MDD | 1 kV | 1 A | 1.1 V @ 1 A | 10 µA @ 1000 V | -55°C ~ 150°C | 4-SMD, Gull Wing | Active | ROHS3 |
| DBLS107G | Taiwan Semiconductor Corporation | 1 kV | 1 A | 1.1 V @ 1.5 A | 2 µA @ 1000 V | -55°C ~ 150°C | 4-SMD, Gull Wing | Active | ROHS3 |
| DBLS107GH | Taiwan Semiconductor Corporation | 1 kV | 1 A | 1.1 V @ 1 A | 2 µA @ 1000 V | -55°C ~ 150°C | 4-SMD, Gull Wing | Active | ROHS3 |
Engineering Selection Recommendations
Primary Recommendation: DF10S-HF is the preferred substitute, maintaining Comchip Technology manufacturer continuity with active product status and identical electrical specifications to the obsolete DF10ST-G.
Alternative Selections: ABS10-HF, ABS10A-13, ABS10U, B1010S_R2_00001, DB107S, DBLS107G, and DBLS107GH are all parametrically equivalent and meet the core electrical and mechanical requirements. All substitute parts carry ROHS3 compliance and MSL 1 rating, ensuring compatibility with standard manufacturing processes.
Leakage Current Consideration: Parts with lower reverse leakage current specifications (ABS10-HF, ABS10A-13, ABS10U, B1010S_R2_00001, DBLS107G, DBLS107GH at 5 µA or 2 µA) provide improved performance margins compared to the original DF10ST-G specification of 10 µA.
Automotive Grade Option: DBLS107GH includes AEC-Q101 automotive qualification, suitable for applications requiring automotive-grade component certification.
Frequently Asked Questions (FAQ)
Q: Can I directly replace DF10ST-G with any of the listed substitute parts?
A: Yes. All listed substitute parts maintain identical peak reverse voltage (1 kV), average rectified current (1 A), operating temperature range (-55°C ~ 150°C), and 4-SMD gull wing package specifications. Direct PCB-level substitution is supported without circuit redesign.
Q: What is the difference between DF10S-HF and the parametric equivalents?
A: DF10S-HF is the manufacturer-recommended successor from Comchip Technology with identical electrical specifications. Parametric equivalents from other manufacturers meet the same core electrical and mechanical requirements but may have different internal designs, leakage characteristics, or certifications.
Q: Does lower reverse leakage current affect compatibility?
A: No. Lower reverse leakage current (5 µA or 2 µA versus 10 µA) represents improved performance and does not compromise compatibility. These parts meet or exceed the original specification.
Q: Are all substitute parts available in the same packaging?
A: Yes. All substitute parts use 4-SMD gull wing surface mount packaging, ensuring mechanical compatibility with existing PCB layouts and pick-and-place equipment.
Q: Which substitute part should I select for new designs?
A: DF10S-HF is recommended for design continuity with the original manufacturer. For alternative sources, ABS10A-13 (Diodes Incorporated) and DBLS107GH (Taiwan Semiconductor Corporation with automotive qualification) offer established supply chains and active product status.
Q: Are there any compliance differences between substitute parts?
A: All substitute parts are ROHS3 compliant with MSL 1 rating. DBLS107GH additionally carries AEC-Q101 automotive qualification. REACH status is unaffected for all parts except ABS10U, which is REACH Affected.
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