DF10S-G Bridge Rectifier Equivalent & Substitute Parts

Part Overview

The DF10S-G is a single-phase bridge rectifier manufactured by Comchip Technology, rated for 1 kV peak reverse voltage and 1 A average rectified current in a 4-SMD surface mount package. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The DF10S-G serves general-purpose rectification applications requiring standard silicon bridge rectifier performance in compact surface mount form factors.

Key Parameters

Parameter	Value
Diode Type	Single Phase
Technology	Standard
Voltage - Peak Reverse (Max)	1 kV
Current - Average Rectified (Io)	1 A
Voltage - Forward (Vf) (Max) @ If	1.1 V @ 1 A
Current - Reverse Leakage @ Vr	10 µA @ 1000 V
Operating Temperature Range	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	4-SMD, Gull Wing
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the DF10S-G are classified based on electrical and mechanical parameter alignment. All listed substitutes maintain the core electrical specifications: 1 kV peak reverse voltage, 1 A average rectified current, 1.1 V forward voltage drop at 1 A, and identical operating temperature range. All substitutes use the same 4-SMD gull wing surface mount package and meet ROHS3 compliance with MSL 1 rating.

Substitution logic is determined by the following key parameters:

Peak reverse voltage: 1 kV (mandatory match)
Average rectified current: 1 A (mandatory match)
Forward voltage: 1.1 V @ 1 A (mandatory match)
Operating temperature: -55°C ~ 150°C (mandatory match)
Package type: 4-SMD, Gull Wing (mandatory match)
RoHS and MSL compliance (mandatory match)

Reverse leakage current specifications vary within acceptable ranges (2 µA to 10 µA @ 1000 V) and do not prevent substitution. Packaging format variations (tube, tape & reel, cut tape) are mechanical considerations that do not affect electrical compatibility.

Parameter Comparison

Part Number	Manufacturer	Product Status	Vr (Max)	Io	Vf @ If	Ir @ Vr	Temp Range	Package	RoHS
DF10S-G	Comchip Technology	Obsolete	1 kV	1 A	1.1 V @ 1 A	10 µA @ 1000 V	-55°C ~ 150°C	4-SMD, Gull Wing	ROHS3
DF10S-HF	Comchip Technology	Active	1 kV	1 A	1.1 V @ 1 A	10 µA @ 1000 V	-55°C ~ 150°C	4-SMD, Gull Wing	ROHS3
DB107S-G	Comchip Technology	Obsolete	1 kV	1 A	1.1 V @ 1 A	10 µA @ 1000 V	-55°C ~ 150°C	4-SMD, Gull Wing	ROHS3
DB107S-HF	Comchip Technology	Active	1 kV	1 A	1.1 V @ 1 A	10 µA @ 1000 V	-55°C ~ 150°C	4-SMD, Gull Wing	ROHS3
DF10S	Good-Ark Semiconductor	Active	1 kV	1 A	1.1 V @ 500 mA	5 µA @ 1000 V	-55°C ~ 150°C	4-SMD, Gull Wing	ROHS3
SDB107-TP	Micro Commercial Co	Active	1 kV	1 A	1.1 V @ 1 A	10 µA @ 1000 V	-55°C ~ 150°C	4-SMD, Gull Wing	ROHS3
DF10S-T	Diodes Incorporated	Active	1 kV	1 A	1.1 V @ 1 A	10 µA @ 1000 V	-65°C ~ 150°C	4-SMD, Gull Wing	ROHS3
DBLS107G C1G	Taiwan Semiconductor Corporation	Active	1 kV	1 A	1.1 V @ 1 A	2 µA @ 1000 V	-55°C ~ 150°C	4-SMD, Gull Wing	ROHS3
DBLS107GHC1G	Taiwan Semiconductor Corporation	Active	1 kV	1 A	1.1 V @ 1 A	2 µA @ 1000 V	-55°C ~ 150°C	4-SMD, Gull Wing	ROHS3
DF10S-E3/45	Vishay General Semiconductor - Diodes Division	Active	1 kV	1 A	1.1 V @ 1 A	5 µA @ 1000 V	-55°C ~ 150°C	4-SMD, Gull Wing	ROHS3
DF10SA-E3/45	Vishay General Semiconductor - Diodes Division	Active	1 kV	1 A	1.1 V @ 1 A	5 µA @ 1000 V	-55°C ~ 150°C	4-SMD, Gull Wing	ROHS3

Engineering Selection Recommendations

For applications currently using the obsolete DF10S-G, the following selection criteria apply:

Primary Recommendation: DF10S-HF (Comchip Technology) This part is the direct manufacturer upgrade from the DF10S-G, maintaining identical electrical specifications and package configuration. Active product status ensures long-term availability and supply chain continuity. Identical reverse leakage current specification (10 µA @ 1000 V) provides direct functional equivalence.

Alternative from Same Manufacturer: DB107S-HF (Comchip Technology) Parametrically equivalent to DF10S-HF with active product status. Identical electrical performance and package type. Selection between DF10S-HF and DB107S-HF depends on internal design documentation and PCB layout compatibility, as both meet all electrical requirements.

Extended Temperature Range Option: DF10S-T (Diodes Incorporated) Offers expanded lower operating temperature limit (-65°C vs. -55°C), suitable for applications requiring enhanced cold-temperature performance. All other electrical parameters match the DF10S-G specification. Active product status with high inventory availability (125,200 pcs).

Lower Leakage Current Options: DBLS107G C1G and DBLS107GHC1G (Taiwan Semiconductor Corporation) Both parts feature reduced reverse leakage current (2 µA @ 1000 V vs. 10 µA @ 1000 V), providing improved performance in low-leakage applications. DBLS107GHC1G includes automotive-grade qualification (AEC-Q101) for applications requiring automotive compliance. Active product status for both variants.

Multi-Source Alternatives: DF10S (Good-Ark Semiconductor), SDB107-TP (Micro Commercial Co), DF10S-E3/45, DF10SA-E3/45 (Vishay) All maintain core electrical specifications with active product status. Selection among these options is based on supply chain preference, packaging format availability (tape & reel, tube, cut tape), and inventory requirements. Forward voltage specification for Good-Ark DF10S is characterized at 500 mA rather than 1 A, but maximum rating remains 1.1 V @ 1 A.

All substitute parts maintain ROHS3 compliance and MSL 1 rating, ensuring compatibility with standard PCB assembly processes.

Frequently Asked Questions (FAQ)

Q: Can I directly replace DF10S-G with DF10S-HF on my PCB? A: Yes. DF10S-HF is the active equivalent from the same manufacturer with identical electrical specifications (1 kV, 1 A, 1.1 V forward voltage) and 4-SMD gull wing package. No design changes are required.

Q: What is the difference between DF10S-HF and DB107S-HF? A: Both parts are manufactured by Comchip Technology and are parametrically equivalent with identical electrical ratings and package type. The difference is in the internal part number designation (DF10 vs. DB107 base series). Both are suitable substitutes for DF10S-G. Verify PCB layout compatibility with your design documentation.

Q: Why do some substitutes have different reverse leakage current specifications? A: Reverse leakage current varies by manufacturer and process technology but remains within acceptable ranges (2 µA to 10 µA @ 1000 V). All values are well below typical circuit requirements and do not affect functional compatibility. Lower leakage options (DBLS series at 2 µA) provide improved performance in sensitive applications.

Q: Is DF10S-T suitable for my application if I need -55°C minimum temperature? A: Yes. DF10S-T has an extended temperature range of -65°C ~ 150°C, which exceeds the -55°C ~ 150°C requirement of DF10S-G. It is fully compatible for applications requiring -55°C minimum operation.

Q: What is the difference between tube and tape & reel packaging? A: Packaging format (tube, tape & reel, cut tape) is a mechanical consideration for assembly and handling. Electrical performance is identical. Select based on your assembly process requirements and inventory management preferences.

Q: Can I use DBLS107GHC1G in non-automotive applications? A: Yes. DBLS107GHC1G meets all standard electrical requirements and is AEC-Q101 qualified for automotive use. Automotive-qualified parts are suitable for general-purpose applications and offer the benefit of enhanced quality assurance and lower reverse leakage current (2 µA).

Q: Which substitute offers the best availability? A: DF10S-T (Diodes Incorporated) has the highest inventory level at 125,200 pcs. DF10S (Good-Ark Semiconductor) has 17,450 pcs available. Both are active products with strong supply chain presence.

Q: Are all substitutes ROHS3 compliant? A: Yes. All listed substitute parts are ROHS3 compliant with MSL 1 (unlimited moisture sensitivity level), matching the compliance profile of DF10S-G.

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