DDTC113TKA-7-F Equivalent & Substitute Parts

Part Overview

The DDTC113TKA-7-F is a pre-biased NPN bipolar junction transistor (BJT) manufactured by Diodes Incorporated, designed for surface mount applications in the SC-59-3 package. This device operates at 50 V collector-emitter breakdown voltage with a maximum collector current of 100 mA and 250 MHz transition frequency. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and ongoing production support.

Substiute Parts

DDTC113TKA-7-F
Diodes IncorporatedIn Stock: 993DDTC113TKA-7-F Datasheet
DDTC113TKA-7-F
Current Part
DDTC113TCA-7-F
Diodes IncorporatedIn Stock: 3654DDTC113TCA-7-F Datasheet
DDTC113TCA-7-F
Direct
DTC124TKAT146
Rohm SemiconductorIn Stock: 3025DTC124TKAT146 Datasheet
DTC124TKAT146
Direct
MUN2230T1G
onsemiIn Stock: 1159MUN2230T1G Datasheet
MUN2230T1G
Direct
DTC114TKAT146
Rohm SemiconductorIn Stock: 186672DTC114TKAT146 Datasheet
DTC114TKAT146
MFR Recommended
DTC143TKAT146
Rohm SemiconductorIn Stock: 365224DTC143TKAT146 Datasheet
DTC143TKAT146
MFR Recommended
DTD114GKT146
Rohm SemiconductorIn Stock: 6391DTD114GKT146 Datasheet
DTD114GKT146
MFR Recommended
MUN2211T1G
onsemiIn Stock: 139426MUN2211T1G Datasheet
MUN2211T1G
MFR Recommended
MUN2211T3G
onsemiIn Stock: 360256MUN2211T3G Datasheet
MUN2211T3G
MFR Recommended
MUN2241T1G
onsemiIn Stock: 690MUN2241T1G Datasheet
MUN2241T1G
MFR Recommended
PDTC124TT,215
Nexperia USA Inc.In Stock: 1049PDTC124TT,215 Datasheet
PDTC124TT,215
MFR Recommended
RN1412TE85LF
Toshiba Semiconductor and StorageIn Stock: 2606RN1412TE85LF Datasheet
RN1412TE85LF
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type NPN - Pre-Biased
Collector Current (Ic) Maximum 100 mA
Collector-Emitter Breakdown Voltage (Vceo) 50 V
Base Resistor (R1) 1 kOhms
DC Current Gain (hFE) Minimum 100 @ 1mA, 5V
Vce Saturation Maximum 300 mV @ 1mA, 10mA
Collector Cutoff Current (ICBO) 500 nA
Transition Frequency 250 MHz
Maximum Power Dissipation 200 mW
Package Type SC-59-3 / SOT-23-3
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the DDTC113TKA-7-F is determined by the following critical parameters:

Primary Substitution Criteria:

  • Transistor type: NPN pre-biased configuration
  • Collector-emitter breakdown voltage: 50 V minimum
  • Maximum collector current: 100 mA minimum
  • Transition frequency: 250 MHz or higher
  • Package compatibility: SC-59-3, SOT-23-3, or TO-236-3 surface mount packages
  • Base resistor value: 1 kOhms (primary specification)
  • DC current gain (hFE): 100 minimum at 1 mA, 5 V
  • Vce saturation: 300 mV maximum at specified bias conditions
  • Collector cutoff current: 500 nA maximum
  • Power dissipation: 200 mW minimum
  • RoHS3 compliance and MSL 1 rating

Secondary Substitution Criteria (Allowable Variations):

  • Base resistor values between 1 kOhms and 100 kOhms are acceptable when circuit design permits
  • Vce saturation values lower than 300 mV are acceptable
  • Power dissipation ratings above 200 mW are acceptable
  • Transition frequency above 250 MHz is acceptable
  • Collector current ratings above 100 mA are acceptable only when package thermal characteristics support the application

Substitutes are grouped by base resistor configuration, as this parameter directly affects switching characteristics and bias behavior in pre-biased transistor applications.

Parameter Comparison

Part Number Manufacturer Ic (Max) mA Vceo (Max) V R1 (Base) kOhms hFE Min @ 1mA, 5V Vce Sat (Max) mV Freq (MHz) Power (mW) Package Status
DDTC113TKA-7-F Diodes Incorporated 100 50 1 100 300 250 200 SC-59-3 Obsolete
DDTC113TCA-7-F Diodes Incorporated 100 50 1 100 300 250 200 SOT-23-3 Active
DTC114TKAT146 Rohm Semiconductor 100 50 10 100 300 250 200 SMT3 Active
DTC124TKAT146 Rohm Semiconductor 100 50 22 100 300 250 200 SMT3 Not For New Designs
DTC143TKAT146 Rohm Semiconductor 100 50 4.7 100 150 250 200 SMT3 Active
DTD114GKT146 Rohm Semiconductor 500 50 10 (R2) 56 @ 50mA, 5V 300 200 200 SMT3 Active
MUN2211T1G onsemi 100 50 10 35 @ 5mA, 10V 250 230 SC-59 Active
MUN2211T3G onsemi 100 50 10 35 @ 5mA, 10V 250 230 SC-59 Active
MUN2230T1G onsemi 100 50 1 3 @ 5mA, 10V 250 338 SC-59 Last Time Buy
MUN2241T1G onsemi 100 50 100 160 @ 5mA, 10V 250 338 SC-59 Active
PDTC124TT,215 Nexperia USA Inc. 100 50 22 100 150 250 TO-236AB Active

Engineering Selection Recommendations

Direct Replacement (Identical Specifications):

DDTC113TCA-7-F is the direct equivalent of DDTC113TKA-7-F. Both devices share identical electrical specifications with 1 kOhms base resistor, 100 mA collector current, and 50 V breakdown voltage. The primary difference is packaging format: DDTC113TCA-7-F is supplied in Tape & Reel (TR) format and maintains Active product status, whereas the original part is Obsolete. This substitute is recommended for direct replacement in existing designs.

Active Status Alternatives (Rohm Semiconductor DTC Series):

DTC114TKAT146 and DTC143TKAT146 are both Active products from Rohm Semiconductor with identical core electrical parameters (100 mA, 50 V, 250 MHz). Both maintain RoHS3 compliance and MSL 1 rating. DTC114TKAT146 features a 10 kOhms base resistor, while DTC143TKAT146 features a 4.7 kOhms base resistor with improved saturation characteristics (150 mV versus 300 mV). Selection between these depends on circuit bias requirements and switching speed specifications.

Active Status Alternatives (onsemi MUN Series):

MUN2211T1G and MUN2211T3G are functionally identical Active products with 10 kOhms base resistor configuration, 100 mA collector current, and 50 V breakdown voltage. Both are supplied in SC-59 package with 230 mW power rating. MUN2241T1G is an Active alternative with 100 kOhms base resistor, suitable for applications requiring higher input impedance and different bias characteristics.

Higher Current Capability Alternative:

DTD114GKT146 is an Active product with 500 mA collector current capability, suitable for applications requiring higher current handling. This device maintains 50 V breakdown voltage and 200 mW power dissipation but features different gain characteristics (56 @ 50 mA, 5V) and lower transition frequency (200 MHz). Selection of this part requires verification that circuit design accommodates the higher current rating and modified gain characteristics.

Automotive-Qualified Alternative:

PDTC124TT,215 from Nexperia USA Inc. is an Active product with AEC-Q100 automotive qualification and 22 kOhms base resistor. This device meets RoHS3 and MSL 1 requirements with improved saturation characteristics (150 mV) and higher power rating (250 mW). This substitute is appropriate for automotive applications requiring qualification documentation.

Parts to Avoid:

DTC124TKAT146 is marked "Not For New Designs" and should not be selected for new product development. MUN2230T1G is marked "Last Time Buy" and has limited availability; this part should be avoided for new designs requiring long-term supply assurance.

Frequently Asked Questions (FAQ)

Q: Can DDTC113TCA-7-F directly replace DDTC113TKA-7-F?

A: Yes. DDTC113TCA-7-F is electrically and functionally identical to DDTC113TKA-7-F. Both devices have 1 kOhms base resistor, 100 mA maximum collector current, 50 V breakdown voltage, and 250 MHz transition frequency. The primary difference is packaging format (Tape & Reel versus bulk). DDTC113TCA-7-F is the recommended replacement due to Active product status.

Q: What is the significance of the base resistor value in pre-biased transistor selection?

A: The base resistor value (R1) directly determines the bias current and switching characteristics of the pre-biased transistor. The DDTC113TKA-7-F specifies 1 kOhms, which establishes a specific bias point. Substitutes with different base resistor values (such as 10 kOhms or 22 kOhms) will exhibit different switching speeds and bias behavior. Selection of an alternative base resistor value requires circuit analysis to confirm compatibility with application requirements.

Q: Are onsemi MUN2211 devices suitable replacements for the DDTC113TKA-7-F?

A: MUN2211T1G and MUN2211T3G are functionally compatible alternatives with identical 100 mA collector current and 50 V breakdown voltage ratings. However, these devices feature 10 kOhms base resistor (versus 1 kOhms in the original part) and different gain characteristics (35 @ 5mA, 10V versus 100 @ 1mA, 5V). These differences affect bias point and switching behavior. Substitution requires circuit verification to confirm the modified bias characteristics are acceptable.

Q: What is the difference between SC-59 and SOT-23-3 packages?

A: SC-59 and SOT-23-3 are equivalent package designations for the same three-lead surface mount transistor package (TO-236-3). Both packages have identical pin configuration, footprint, and thermal characteristics. Devices specified in either package designation are mechanically and electrically interchangeable from a PCB assembly perspective.

Q: Why is DTC124TKAT146 marked "Not For New Designs"?

A: Parts marked "Not For New Designs" are in transition toward obsolescence. While currently available, manufacturers recommend against incorporating these parts into new product designs to avoid future supply discontinuation. For new designs, select parts with Active product status such as DTC114TKAT146 or DTC143TKAT146.

Q: Can DTD114GKT146 be used as a substitute despite its 500 mA collector current rating?

A: DTD114GKT146 has higher collector current capability (500 mA versus 100 mA) but maintains the same 50 V breakdown voltage and 200 mW power dissipation as the original part. The higher current rating does not prevent substitution; however, the device exhibits different gain characteristics (56 @ 50mA, 5V) and lower transition frequency (200 MHz versus 250 MHz). Substitution requires verification that the circuit design accommodates these electrical differences and that the application does not require the higher switching speed of the original part.

Q: Is PDTC124TT,215 suitable for non-automotive applications?

A: Yes. PDTC124TT,215 is an Active product with AEC-Q100 automotive qualification, but automotive qualification does not restrict use in non-automotive applications. This device meets RoHS3 and MSL 1 requirements identical to the original part. The 22 kOhms base resistor and improved saturation characteristics (150 mV) make this device suitable for applications where these electrical characteristics are compatible with circuit requirements.

Q: What compliance certifications are maintained across all substitute parts?

A: All substitute parts listed maintain RoHS3 compliance and MSL 1 (Unlimited moisture sensitivity level) rating, identical to the original DDTC113TKA-7-F. All parts are classified as REACH Unaffected and carry EAR99 export classification. These certifications ensure regulatory compliance across all listed alternatives.

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