DDTA115GKA-7-F Equivalent & Substitute Parts

Part Overview

The DDTA115GKA-7-F is a pre-biased PNP bipolar junction transistor (BJT) manufactured by Diodes Incorporated, designed for surface mount applications in the SC-59-3 package. This component operates at 50 V collector-emitter breakdown voltage with a maximum collector current of 100 mA and transition frequency of 250 MHz. The part is classified as obsolete, necessitating identification of active equivalent and substitute components that maintain functional compatibility within specified electrical and mechanical parameters.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP - Pre-Biased	—
Collector Current (Ic) Maximum	100	mA
Collector-Emitter Breakdown Voltage (Max)	50	V
Emitter-Base Resistor (R2)	100	kOhms
DC Current Gain (hFE) Min @ Ic, Vce	82 @ 5mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA	—
Collector Cutoff Current (ICBO) Max	500	nA
Transition Frequency	250	MHz
Power Dissipation Maximum	200	mW
Mounting Type	Surface Mount	—
Package	TO-236-3, SC-59, SOT-23-3	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the DDTA115GKA-7-F is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

Transistor type: PNP - Pre-Biased configuration
Collector-emitter breakdown voltage: 50 V (maximum)
Collector current rating: 100 mA (maximum)
Transition frequency: 250 MHz (minimum)
Power dissipation: 200 mW (maximum)
Package compatibility: TO-236-3, SC-59, SOT-23-3 surface mount packages
RoHS3 compliance and MSL 1 rating

Substitution Categories:

Category 1: Direct Electrical Equivalents (100 mA Collector Current) Parts with identical or superior electrical specifications and 100 mA collector current rating: DTA114TCA-TP, DTA114TCAT116, DTA114TKAT146, DTA143TKAT146, MMUN2112LT1G, MMUN2113LT1G

Category 2: Reduced Current Capability (30 mA Collector Current) Parts with lower collector current ratings suitable for applications not requiring full 100 mA capacity: DTA124EKAT146, DTA144EKAT146

Category 3: Enhanced Current Capability (500 mA Collector Current) Parts with higher collector current ratings for applications requiring greater current handling: DTB114GKT146

Category 4: Functional Equivalents with Resistor Network Variations Parts with different internal resistor configurations: DTA123EKAT146

Internal resistor networks (R1 and R2 values) vary across substitute parts and affect biasing characteristics. Selection must account for application-specific biasing requirements.

Parameter Comparison

Part Number	Manufacturer	Ic (Max) mA	Vce Breakdown (Max) V	R1 (Base) kOhms	R2 (Emitter-Base) kOhms	hFE Min @ Ic, Vce	Vce Sat (Max) mV	Frequency MHz	Power mW	Package	Status
DDTA115GKA-7-F	Diodes Incorporated	100	50	—	100	82 @ 5mA, 5V	300 @ 500µA, 10mA	250	200	SC-59-3	Obsolete
DTA114TCA-TP	Micro Commercial Co	100	50	10	—	100 @ 1mA, 5V	300 @ 1mA, 10mA	250	200	SOT-23	Active
DTA114TCAT116	Rohm Semiconductor	100	50	10	—	100 @ 1mA, 5V	300 @ 1mA, 10mA	250	200	SST3	Active
DTA114TKAT146	Rohm Semiconductor	100	50	10	—	100 @ 1mA, 5V	300 @ 1mA, 10mA	250	200	SMT3	Active
DTA123EKAT146	Rohm Semiconductor	100	50	2.2	2.2	20 @ 20mA, 5V	300 @ 500µA, 10mA	250	200	SMT3	Active
DTA124EKAT146	Rohm Semiconductor	30	50	22	22	56 @ 5mA, 5V	300 @ 500µA, 10mA	250	200	SMT3	Active
DTA143TKAT146	Rohm Semiconductor	100	50	4.7	—	100 @ 1mA, 5V	300 @ 250µA, 5mA	250	200	SMT3	Active
DTA144EKAT146	Rohm Semiconductor	30	50	47	47	68 @ 5mA, 5V	300 @ 500µA, 10mA	250	200	SMT3	Active
DTB114GKT146	Rohm Semiconductor	500	50	—	10	56 @ 50mA, 5V	300 @ 2.5mA, 50mA	200	200	SMT3	Active
MMUN2112LT1G	onsemi	100	50	22	22	60 @ 5mA, 10V	250 @ 300µA, 10mA	—	246	SOT-23-3	Active
MMUN2113LT1G	onsemi	100	50	47	47	80 @ 5mA, 10V	250 @ 300µA, 10mA	—	246	SOT-23-3	Active

Engineering Selection Recommendations

Primary Substitutes for Direct Replacement (100 mA Collector Current, Active Status):

DTA114TKAT146 (Rohm Semiconductor) — Manufacturer-recommended substitute with highest inventory availability (125,300 pcs). Maintains 100 mA collector current, 50 V breakdown voltage, 250 MHz transition frequency, and 200 mW power rating. Cut Tape & Digi-Reel packaging. ROHS3 compliant, MSL 1.
DTA143TKAT146 (Rohm Semiconductor) — Manufacturer-recommended substitute with 125,400 pcs inventory. Identical electrical specifications to DTA114TKAT146 with 4.7 kOhm base resistor. ROHS3 compliant, MSL 1.
DTA114TCA-TP (Micro Commercial Co) — Active substitute with 1,001 pcs inventory. Meets all critical electrical parameters with 10 kOhm base resistor. SOT-23 package variant. ROHS3 compliant, MSL 1.

Secondary Substitutes (Reduced Current Capability, 30 mA):

DTA124EKAT146 (Rohm Semiconductor) — For applications not requiring full 100 mA collector current. 605,200 pcs inventory. 22 kOhm base and emitter-base resistors. ROHS3 compliant, MSL 1.
DTA144EKAT146 (Rohm Semiconductor) — For reduced current applications. 350,100 pcs inventory. 47 kOhm base and emitter-base resistors. ROHS3 compliant, MSL 1.

Enhanced Current Capability Substitute (500 mA):

DTB114GKT146 (Rohm Semiconductor) — For applications requiring higher collector current. 1,595 pcs inventory. Transition frequency reduced to 200 MHz. ROHS3 compliant, MSL 1.

Functional Equivalent with Different Biasing:

DTA123EKAT146 (Rohm Semiconductor) — 125,100 pcs inventory. Maintains 100 mA collector current but features 2.2 kOhm base and emitter-base resistors with lower hFE (20 @ 20mA, 5V). ROHS3 compliant, MSL 1.

onsemi Alternatives (100 mA, Different Resistor Networks):

MMUN2112LT1G (onsemi) — 42,300 pcs inventory. 22 kOhm base and emitter-base resistors. 246 mW power rating. ROHS3 compliant, MSL 1.
MMUN2113LT1G (onsemi) — 32,100 pcs inventory. 47 kOhm base and emitter-base resistors. 246 mW power rating. ROHS3 compliant, MSL 1.

All recommended substitutes maintain ROHS3 compliance and MSL 1 (unlimited moisture sensitivity) ratings. Selection among primary substitutes depends on internal resistor network requirements for specific biasing applications.

Frequently Asked Questions (FAQ)

Q: Can DTA114TKAT146 directly replace DDTA115GKA-7-F in all applications?

A: DTA114TKAT146 maintains identical electrical specifications (100 mA collector current, 50 V breakdown voltage, 250 MHz transition frequency, 200 mW power dissipation). However, the internal base resistor differs (10 kOhms vs. 100 kOhms in DDTA115GKA-7-F). Verify biasing circuit compatibility before implementation. Package variant (SMT3 vs. SC-59-3) requires PCB layout verification.

Q: What is the difference between DTA114TKAT146 and DTA143TKAT146?

A: Both parts maintain identical collector current (100 mA), breakdown voltage (50 V), and transition frequency (250 MHz). DTA143TKAT146 features a 4.7 kOhm base resistor compared to DTA114TKAT146's 10 kOhm base resistor. Vce saturation specifications differ slightly (300mV @ 250µA, 5mA for DTA143 vs. 300mV @ 1mA, 10mA for DTA114). Selection depends on application biasing requirements.

Q: Why are DTA124EKAT146 and DTA144EKAT146 listed as substitutes if they have only 30 mA collector current?

A: These parts are functional substitutes for applications where collector current does not exceed 30 mA. They maintain the 50 V breakdown voltage, 250 MHz transition frequency, and 200 mW power dissipation. Internal resistor networks differ significantly (22 kOhms and 47 kOhms respectively), affecting biasing characteristics. Use only when application current requirements are confirmed below 30 mA.

Q: What is the significance of the internal resistor values (R1 and R2)?

A: Pre-biased BJTs integrate internal resistor networks that establish base bias without external components. R1 (base resistor) and R2 (emitter-base resistor) determine the biasing point and switching characteristics. Different resistor values produce different DC current gain (hFE) and saturation voltage characteristics. Application circuit design must account for these differences when selecting substitutes.

Q: Are all substitute parts available in the same package as DDTA115GKA-7-F?

A: DDTA115GKA-7-F uses SC-59-3 package. Substitutes are available in SOT-23, SST3, and SMT3 package variants, all within the TO-236-3 / SOT-23-3 family. These packages are mechanically and electrically compatible but require PCB layout verification. Consult package datasheets for precise pin configurations and land pattern requirements.

Q: What does "obsolete" status mean for DDTA115GKA-7-F?

A: Obsolete status indicates the part is no longer manufactured by Diodes Incorporated and existing inventory is limited (1,032 pcs reported). All recommended substitutes carry "Active" status, indicating current production and long-term availability. Active substitutes are preferred for new designs and ongoing production requirements.

Q: How do onsemi MMUN2112LT1G and MMUN2113LT1G compare to Rohm alternatives?

A: Both onsemi parts maintain 100 mA collector current and 50 V breakdown voltage. MMUN2112LT1G features 22 kOhm resistors; MMUN2113LT1G features 47 kOhm resistors. Power dissipation is 246 mW (vs. 200 mW for Rohm parts). Transition frequency is not specified for onsemi parts. Vce saturation is 250 mV (vs. 300 mV for Rohm). Selection depends on specific biasing and saturation voltage requirements.

Q: Is DTB114GKT146 suitable as a substitute for higher current applications?

A: DTB114GKT146 provides 500 mA collector current capability, five times the DDTA115GKA-7-F rating. It maintains 50 V breakdown voltage and 200 mW power dissipation. Transition frequency is reduced to 200 MHz (vs. 250 MHz). Use DTB114GKT146 only when application requires collector currents between 100 mA and 500 mA and reduced frequency response is acceptable.

Q: Are all substitutes RoHS3 compliant?

A: Yes. All recommended substitutes carry ROHS3 compliance certification and MSL 1 (unlimited moisture sensitivity) rating, matching DDTA115GKA-7-F specifications. This ensures compatibility with RoHS3-regulated supply chains and manufacturing environments.

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