DCX124EUQ-13-F Equivalent & Substitute Parts

Part Overview

The DCX124EUQ-13-F is a pre-biased dual transistor (1 NPN, 1 PNP) manufactured by Diodes Incorporated in SOT-363 surface mount packaging. This component integrates internal biasing resistors to simplify circuit design in applications requiring complementary transistor pairs. The part is active in production and carries automotive-grade qualification (AEC-Q101), making it suitable for demanding automotive and industrial applications. Substitute parts are identified based on matching electrical specifications, package compatibility, and functional equivalence to support design flexibility and supply chain continuity.

Substiute Parts

DCX124EUQ-13-F
Diodes IncorporatedIn Stock: 805DCX124EUQ-13-F Datasheet
DCX124EUQ-13-F
Current Part
MUN5212DW1T1G
onsemiIn Stock: 96926MUN5212DW1T1G Datasheet
MUN5212DW1T1G
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NSVMUN5212DW1T1G
onsemiIn Stock: 35145NSVMUN5212DW1T1G Datasheet
NSVMUN5212DW1T1G
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PUMD16,115
Nexperia USA Inc.In Stock: 53022PUMD16,115 Datasheet
PUMD16,115
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PUMD2,115
Nexperia USA Inc.In Stock: 71874PUMD2,115 Datasheet
PUMD2,115
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PUMD2,125
Nexperia USA Inc.In Stock: 3314PUMD2,125 Datasheet
PUMD2,125
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PUMD2,165
Nexperia USA Inc.In Stock: 11092PUMD2,165 Datasheet
PUMD2,165
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PUMH1,115
Nexperia USA Inc.In Stock: 8017PUMH1,115 Datasheet
PUMH1,115
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Key Parameters

Parameter Value Unit
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) Max 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 22 kOhms
Resistor - Emitter Base (R2) 22 kOhms
DC Current Gain (hFE) Min @ Ic, Vce 60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300 mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 500 nA
Frequency - Transition 250 MHz
Power - Max 200 mW
Package / Case 6-TSSOP, SC-88, SOT-363
Grade Automotive
Qualification AEC-Q101
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the DCX124EUQ-13-F are grouped based on the following substitution criteria:

Primary Matching Parameters:

  • Collector current rating: 100 mA maximum
  • Collector-emitter breakdown voltage: 50 V
  • Base resistor value: 22 kOhms
  • Surface mount package compatibility: SOT-363 / SC-88 / 6-TSSOP
  • RoHS3 compliance and REACH unaffected status

Substitution Logic:

Parts are classified into two functional categories:

  1. Dual NPN Configuration (2 NPN): MUN5212DW1T1G and NSVMUN5212DW1T1G from onsemi provide dual NPN pre-biased transistors with identical current and voltage ratings. These parts differ from the main part in transistor configuration (2 NPN instead of 1 NPN + 1 PNP) and are suitable for applications requiring dual NPN functionality within the same electrical envelope.

  2. Dual NPN/PNP Configuration (1 NPN, 1 PNP): PUMD16,115, PUMD2,115, PUMD2,125, and PUMD2,165 from Nexperia USA Inc. maintain the complementary transistor pair configuration matching the DCX124EUQ-13-F. These parts share identical current, voltage, and base resistor specifications with compatible package options.

All substitute parts maintain the 50 V breakdown voltage, 100 mA collector current rating, and surface mount form factor. Variations in emitter-base resistor values, saturation voltage characteristics, and power dissipation ratings are noted in the parameter comparison table.

Parameter Comparison

Parameter DCX124EUQ-13-F MUN5212DW1T1G NSVMUN5212DW1T1G PUMD16,115 PUMD2,115 PUMD2,125 PUMD2,165 PUMH1,115
Manufacturer Diodes Inc. onsemi onsemi Nexperia Nexperia Nexperia Nexperia Nexperia
Transistor Type 1 NPN, 1 PNP 2 NPN 2 NPN 1 NPN, 1 PNP 1 NPN, 1 PNP 1 NPN, 1 PNP 1 NPN, 1 PNP 2 NPN
Ic (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
Vce Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V
R1 (Base) 22 kOhms 22 kOhms 22 kOhms 22 kOhms 22 kOhms 22 kOhms 22 kOhms 22 kOhms
R2 (Emitter-Base) 22 kOhms 22 kOhms 22 kOhms 47 kOhms 22 kOhms 22 kOhms 22 kOhms 22 kOhms
hFE (Min) @ Ic, Vce 60 @ 5mA, 5V 60 @ 5mA, 10V 60 @ 5mA, 10V 80 @ 5mA, 5V 60 @ 5mA, 5V 60 @ 5mA, 5V 60 @ 5mA, 5V 60 @ 5mA, 5V
Vce Saturation (Max) 300 mV @ 500µA, 10mA 250 mV @ 300µA, 10mA 250 mV @ 300µA, 10mA 150 mV @ 500µA, 10mA 150 mV @ 500µA, 10mA 150 mV @ 500µA, 10mA 150 mV @ 500µA, 10mA 150 mV @ 500µA, 10mA
Icbo (Max) 500 nA 500 nA 500 nA 1 µA 1 µA 1 µA 1 µA 100 nA
Frequency - Transition 250 MHz 230 MHz
Power (Max) 200 mW 250 mW 250 mW 300 mW 300 mW 300 mW 300 mW 300 mW
Package SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP
Grade Automotive Automotive
Qualification AEC-Q101 AEC-Q100
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

For Automotive Applications with AEC Qualification:

PUMD16,115 from Nexperia USA Inc. is qualified to AEC-Q100 and carries automotive-grade designation, matching the compliance profile of the DCX124EUQ-13-F (AEC-Q101). This part maintains the 1 NPN, 1 PNP configuration and is suitable for direct substitution in automotive circuits where qualification standards are required. Note that PUMD16,115 specifies R2 (emitter-base resistor) at 47 kOhms, differing from the 22 kOhms of the main part.

For General Industrial and Consumer Applications:

PUMD2,125 and PUMD2,165 from Nexperia USA Inc. provide equivalent electrical performance with identical resistor values (22 kOhms base and emitter-base) and maintain the complementary transistor pair configuration. These parts are available in higher quantities and offer cost-effective alternatives where automotive qualification is not required.

For Dual NPN Configurations:

MUN5212DW1T1G and NSVMUN5212DW1T1G from onsemi provide dual NPN pre-biased transistors with matching current and voltage ratings. These parts are suitable only for applications requiring dual NPN functionality and cannot replace the DCX124EUQ-13-F in circuits designed for complementary NPN/PNP operation.

For High-Frequency Applications:

PUMH1,115 from Nexperia USA Inc. specifies a transition frequency of 230 MHz, approaching the 250 MHz rating of the DCX124EUQ-13-F. This part is suitable for applications requiring dual NPN configuration with maintained frequency performance.

All substitute parts maintain RoHS3 compliance and REACH unaffected status, ensuring environmental and regulatory compatibility with the original part.

Frequently Asked Questions (FAQ)

Q: Can MUN5212DW1T1G replace DCX124EUQ-13-F in all applications?

A: No. MUN5212DW1T1G contains 2 NPN transistors, while DCX124EUQ-13-F contains 1 NPN and 1 PNP. Substitution is only valid for circuits specifically designed for dual NPN operation. Circuits requiring complementary transistor pairs cannot use this substitute.

Q: What is the significance of the R2 (emitter-base resistor) difference in PUMD16,115?

A: PUMD16,115 specifies R2 at 47 kOhms compared to 22 kOhms in DCX124EUQ-13-F. This affects the biasing characteristics and switching behavior. Substitution requires circuit validation to confirm acceptable performance with the modified resistor value.

Q: Are all substitute parts available in the same package?

A: All substitute parts are available in 6-TSSOP or SOT-363 surface mount packages compatible with DCX124EUQ-13-F. Package designations may vary by manufacturer (SC-88, SC70-6, SOT-363, 6-TSSOP) but are mechanically and electrically equivalent for PCB mounting.

Q: Which substitute parts carry automotive qualification?

A: PUMD16,115 carries AEC-Q100 qualification and automotive-grade designation. DCX124EUQ-13-F carries AEC-Q101 qualification. Other substitute parts do not specify automotive qualification and are suitable for industrial and consumer applications only.

Q: What is the impact of saturation voltage differences between parts?

A: DCX124EUQ-13-F specifies Vce saturation at 300 mV maximum, while most Nexperia substitutes specify 150 mV maximum. Lower saturation voltage indicates improved switching efficiency and reduced power dissipation. Circuits designed for the higher saturation voltage of the main part will operate with improved performance using substitutes with lower saturation voltage.

Q: Can PUMH1,115 be used as a direct replacement for DCX124EUQ-13-F?

A: PUMH1,115 is a dual NPN device and cannot replace DCX124EUQ-13-F in circuits requiring complementary transistor pairs. It is suitable only for applications designed for dual NPN configuration.

Q: What inventory considerations apply to these substitute parts?

A: MUN5212DW1T1G has the highest inventory (96,900 pcs), followed by PUMD2,115 (71,852 pcs) and PUMD16,115 (53,000 pcs). PUMD2,125 has limited inventory (3,257 pcs). Availability should be confirmed with suppliers for production quantities.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts are RoHS3 compliant and REACH unaffected, matching the environmental compliance of DCX124EUQ-13-F.

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