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DCX124EU-7 Equivalent & Substitute Parts
Part Overview
The DCX124EU-7 is a pre-biased dual bipolar transistor (BJT) combining 1 NPN and 1 PNP transistor in a single SOT-363 surface mount package. This component integrates internal biasing resistors, eliminating the need for external base resistor networks in switching and logic applications. The DCX124EU-7 is discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives that maintain electrical and mechanical compatibility with existing designs.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) | — |
| Current - Collector (Ic) Max | 100 | mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 | V |
| Resistor - Base (R1) | 22 | kOhms |
| Resistor - Emitter Base (R2) | 22 | kOhms |
| DC Current Gain (hFE) Min @ Ic, Vce | 56 @ 5mA, 5V | — |
| Vce Saturation (Max) @ Ib, Ic | 300 @ 500µA, 10mA | mV |
| Current - Collector Cutoff (Max) | 500 | nA |
| Frequency - Transition | 250 | MHz |
| Power - Max | 200 | mW |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | — |
| Mounting Type | Surface Mount | — |
| RoHS Status | RoHS non-compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the DCX124EU-7 is determined by the following critical parameters:
Primary Substitution Criteria:
- Transistor configuration: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Maximum collector current: 100 mA
- Maximum collector-emitter breakdown voltage: 50 V
- Internal base resistor value: 22 kOhms (R1)
- Internal emitter-base resistor value: 22 kOhms (R2)
- Package type: SOT-363 (6-TSSOP, SC-88)
- Surface mount technology
Secondary Compatibility Parameters:
- DC current gain (hFE) minimum specification
- Vce saturation voltage
- Collector cutoff current
- Power dissipation rating
- RoHS compliance status
Parts are grouped into three categories:
- Direct Manufacturer Variants – Same base part number with different packaging or compliance versions
- Manufacturer-Recommended Equivalents – Alternative part numbers with identical or superior electrical specifications and same package footprint
- Functional Alternatives – Parts with different internal resistor configurations or transistor type combinations that require circuit evaluation
Parameter Comparison
| Part Number | Manufacturer | Transistor Type | Ic (Max) mA | Vce Breakdown (Max) V | R1 (Base) kOhms | R2 (Emitter-Base) kOhms | hFE Min @ Ic, Vce | Vce Sat (Max) mV | Frequency MHz | Power (Max) mW | Package | Status | RoHS |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DCX124EU-7 | Diodes Incorporated | 1 NPN, 1 PNP | 100 | 50 | 22 | 22 | 56 @ 5mA, 5V | 300 @ 500µA, 10mA | 250 | 200 | SOT-363 | Discontinued | Non-compliant |
| DCX124EU-7-F | Diodes Incorporated | 1 NPN, 1 PNP | 100 | 50 | 22 | 22 | 56 @ 5mA, 5V | 300 @ 500µA, 10mA | 250 | 200 | SOT-363 | Active | ROHS3 Compliant |
| MUN5312DW1T1G | onsemi | 1 NPN, 1 PNP | 100 | 50 | 22 | 22 | 60 @ 5mA, 10V | 250 @ 300µA, 10mA | — | 250 | SOT-363 | Active | ROHS3 Compliant |
| MUN5312DW1T2G | onsemi | 1 NPN, 1 PNP | 100 | 50 | 22 | 22 | 60 @ 5mA, 10V | 250 @ 300µA, 10mA | — | 385 | SOT-363 | Active | ROHS3 Compliant |
| NSVMUN5212DW1T1G | onsemi | 2 NPN | 100 | 50 | 22 | 22 | 60 @ 5mA, 10V | 250 @ 300µA, 10mA | — | 250 | SOT-363 | Active | ROHS3 Compliant |
| PUMD16,115 | Nexperia USA Inc. | 1 NPN, 1 PNP | 100 | 50 | 22 | 47 | 80 @ 5mA, 5V | 150 @ 500µA, 10mA | — | 300 | 6-TSSOP | Active | ROHS3 Compliant |
| PUMD2,115 | Nexperia USA Inc. | 1 NPN, 1 PNP | 100 | 50 | 22 | 22 | 60 @ 5mA, 5V | 150 @ 500µA, 10mA | — | 300 | 6-TSSOP | Active | ROHS3 Compliant |
| PUMD2,125 | Nexperia USA Inc. | 1 NPN, 1 PNP | 100 | 50 | 22 | 22 | 60 @ 5mA, 5V | 150 @ 500µA, 10mA | — | 300 | 6-TSSOP | Active | ROHS3 Compliant |
| PUMD2,165 | Nexperia USA Inc. | 1 NPN, 1 PNP | 100 | 50 | 22 | 22 | 60 @ 5mA, 5V | 150 @ 500µA, 10mA | — | 300 | 6-TSSOP | Active | ROHS3 Compliant |
| PUMF11,115 | Nexperia USA Inc. | 1 NPN Pre-Biased, 1 PNP | 100 | 50, 40 | 22 | 47 | 80 @ 5mA, 5V / 120 @ 1mA, 6V | 150 @ 500µA, 10mA / 200 @ 5mA, 50mA | 100 | 300 | 6-TSSOP | Obsolete | ROHS3 Compliant |
| PUMH1,115 | Nexperia USA Inc. | 2 NPN | 100 | 50 | 22 | 22 | 60 @ 5mA, 5V | 150 @ 500µA, 10mA | 230 | 300 | 6-TSSOP | Active | ROHS3 Compliant |
Engineering Selection Recommendations
Tier 1 – Direct Replacement (Identical Specifications)
DCX124EU-7-F is the primary substitute. This part is manufactured by Diodes Incorporated and maintains identical electrical specifications to the DCX124EU-7 while offering active product status and ROHS3 compliance. The only difference is packaging format (Tape & Reel vs. bulk), making it a direct functional equivalent suitable for all applications previously using DCX124EU-7.
Tier 2 – Manufacturer-Recommended Equivalents (Active Status, Enhanced Specifications)
MUN5312DW1T2G (onsemi) and MUN5312DW1T1G (onsemi) are manufacturer-recommended alternatives. Both maintain the 1 NPN, 1 PNP configuration with identical current and voltage ratings. The MUN5312DW1T2G offers increased power dissipation (385 mW vs. 200 mW), providing additional thermal margin. Both are ROHS3 compliant and actively manufactured. Minor differences in Vce saturation (250 mV vs. 300 mV) and hFE specification (60 vs. 56) represent improved performance characteristics.
PUMD2,115, PUMD2,125, and PUMD2,165 (Nexperia) provide equivalent 1 NPN, 1 PNP configuration with identical internal resistor values (22 kOhms each). These parts offer lower Vce saturation (150 mV vs. 300 mV) and higher power rating (300 mW vs. 200 mW). All are ROHS3 compliant and actively produced. The different suffix designations (115, 125, 165) indicate packaging or tape reel specifications.
Tier 3 – Functional Alternatives (Different Transistor Configuration)
NSVMUN5212DW1T1G (onsemi) and PUMH1,115 (Nexperia) contain 2 NPN transistors instead of 1 NPN + 1 PNP. These parts are suitable only for applications requiring dual NPN functionality and cannot directly replace the DCX124EU-7 in circuits requiring complementary NPN/PNP operation.
PUMD16,115 (Nexperia) contains 1 NPN, 1 PNP but uses different internal resistor values (22 kOhms base, 47 kOhms emitter-base vs. 22 kOhms each). This part includes automotive qualification (AEC-Q100) and offers improved performance metrics but requires circuit verification due to resistor network differences.
PUMF11,115 (Nexperia) is marked obsolete and should not be selected for new designs despite active inventory. This part contains 1 NPN Pre-Biased and 1 PNP with different resistor configuration (22 kOhms base, 47 kOhms emitter-base) and lower transition frequency (100 MHz vs. 250 MHz).
Frequently Asked Questions (FAQ)
Q: Can DCX124EU-7-F be used as a direct replacement for DCX124EU-7?
A: Yes. DCX124EU-7-F is manufactured by Diodes Incorporated with identical electrical specifications, internal resistor values, and package footprint. The only difference is packaging format (Tape & Reel). It is actively produced and ROHS3 compliant.
Q: What is the difference between MUN5312DW1T1G and MUN5312DW1T2G?
A: Both are onsemi pre-biased dual transistors with identical electrical specifications. The primary difference is power dissipation rating: MUN5312DW1T1G is rated 250 mW while MUN5312DW1T2G is rated 385 mW. The higher power rating provides additional thermal margin in high-current applications.
Q: Why are NSVMUN5212DW1T1G and PUMH1,115 listed as alternatives if they contain 2 NPN transistors?
A: These parts are listed as functional alternatives for reference only. They are not direct replacements for DCX124EU-7 because they lack the PNP transistor. They are suitable only for applications requiring dual NPN functionality. Circuits designed for complementary NPN/PNP operation cannot use these parts without redesign.
Q: Are all substitute parts ROHS3 compliant?
A: All substitute parts listed in Tier 1 and Tier 2 are ROHS3 compliant. The original DCX124EU-7 is RoHS non-compliant. PUMF11,115 is ROHS3 compliant but is obsolete and should not be selected for new designs.
Q: What is the significance of the internal resistor values (R1 and R2)?
A: Internal resistor values determine the biasing characteristics and switching speed of the pre-biased transistor. The DCX124EU-7 uses 22 kOhms for both R1 (base) and R2 (emitter-base). Most direct substitutes maintain these values. PUMD16,115 and PUMF11,115 use 47 kOhms for R2, which affects biasing behavior and requires circuit evaluation before substitution.
Q: Can PUMD16,115 be used as a substitute despite different resistor values?
A: PUMD16,115 has different internal resistor configuration (22 kOhms base, 47 kOhms emitter-base vs. 22 kOhms each in DCX124EU-7). While it maintains the same transistor type, current, and voltage ratings, the different resistor network affects biasing and switching characteristics. Circuit-level evaluation is required before substitution.
Q: What packaging formats are available for substitute parts?
A: Substitute parts are available in two primary package formats: SOT-363 (6-TSSOP, SC-88) and 6-TSSOP. All parts maintain the same physical footprint and pin configuration, ensuring mechanical compatibility with existing PCB layouts. Packaging variants (Cut Tape, Tape & Reel) do not affect electrical performance or physical dimensions.
Q: Is PUMF11,115 suitable for new designs?
A: No. PUMF11,115 is marked obsolete and should not be selected for new designs despite current inventory availability. Obsolete parts may have limited future availability and manufacturer support. Select from Tier 1 or Tier 2 alternatives for new designs.
Q: What is the inventory status of substitute parts?
A: DCX124EU-7-F has 18,200 units in stock. MUN5312DW1T2G has 111,400 units. PUMD2,115 has 71,852 units. PUMD2,125 has 3,257 units. All Tier 1 and Tier 2 alternatives maintain substantial inventory levels, ensuring availability for production requirements.
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