DCX114TK-7-F Equivalent & Substitute Parts

Part Overview

The DCX114TK-7-F is a pre-biased dual bipolar transistor (BJT) manufactured by Diodes Incorporated, combining 1 NPN and 1 PNP transistor in a single surface mount package. This device is classified as Active product status and is designed for applications requiring integrated bias resistor networks to simplify circuit design and reduce component count.

Substitute parts become necessary when the primary part experiences extended lead times, inventory constraints, or when design flexibility permits the use of functionally equivalent alternatives. The DCX114TK-7-F has been identified with manufacturer-recommended substitutes that maintain electrical and mechanical compatibility within specified parameters.

Substiute Parts

DCX114TK-7-F
Diodes IncorporatedIn Stock: 958DCX114TK-7-F Datasheet
DCX114TK-7-F
Current Part
RN1611(TE85L,F)
Toshiba Semiconductor and StorageIn Stock: 1216RN1611(TE85L,F) Datasheet
RN1611(TE85L,F)
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 300 @ 100µA, 1mA mV
Frequency - Transition 250 MHz
Power - Max 300 mW
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution eligibility for the DCX114TK-7-F is determined by strict alignment of the following critical parameters:

Electrical Compatibility Requirements:

  • Maximum collector current: 100mA
  • Maximum collector-emitter breakdown voltage: 50V
  • Base resistor value: 10kOhms
  • Transition frequency: 250MHz
  • Maximum power dissipation: 300mW
  • Surface mount packaging: SC-74 / SOT-457

Regulatory & Environmental Compliance:

  • RoHS compliance status (ROHS3 or equivalent)
  • Moisture sensitivity level: 1 (Unlimited)
  • ECCN classification: EAR99

The substitute part RN1611(TE85L,F) from Toshiba Semiconductor and Storage meets all specified electrical parameters and maintains equivalent regulatory compliance. While the transistor configuration differs (2 NPN vs. 1 NPN/1 PNP), the electrical performance envelope and package footprint remain compatible for applications where the dual NPN configuration is functionally acceptable.

Parameter Comparison

Parameter DCX114TK-7-F (Diodes Inc.) RN1611(TE85L,F) (Toshiba) Match Status
Current - Collector (Ic) (Max) 100 mA 100 mA Equivalent
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V Equivalent
Resistor - Base (R1) 10 kOhms 10 kOhms Equivalent
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V 120 @ 1mA, 5V Compatible (Higher Gain)
Vce Saturation (Max) @ Ib, Ic 300 mV @ 100µA, 1mA 300 mV @ 250µA, 5mA Compatible (Different Test Conditions)
Frequency - Transition 250 MHz 250 MHz Equivalent
Power - Max 300 mW 300 mW Equivalent
Mounting Type Surface Mount Surface Mount Equivalent
Package / Case SC-74, SOT-457 SC-74, SOT-457 Equivalent
RoHS Status ROHS3 Compliant RoHS Compliant Compatible
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) Equivalent

Engineering Selection Recommendations

Primary Part: DCX114TK-7-F

The DCX114TK-7-F remains the preferred selection when available. This part carries Active product status and ROHS3 compliance certification. The dual NPN/PNP configuration provides integrated functionality for complementary switching applications.

Substitute Part: RN1611(TE85L,F)

The RN1611(TE85L,F) from Toshiba is a qualified manufacturer-recommended substitute. This part maintains Active product status and RoHS compliance. The dual NPN configuration (versus the original NPN/PNP pairing) requires circuit-level evaluation to confirm functional compatibility. All electrical parameters—collector current, breakdown voltage, base resistor value, transition frequency, and power rating—are equivalent or superior to the primary part.

Both parts are surface mount devices in SC-74/SOT-457 packages with MSL 1 rating, ensuring compatibility with standard PCB assembly processes and storage conditions.

Frequently Asked Questions (FAQ)

Q: Can the RN1611(TE85L,F) be used as a direct replacement for the DCX114TK-7-F?

A: The RN1611(TE85L,F) is electrically compatible in terms of current, voltage, frequency, and power ratings. However, the transistor configuration differs: the DCX114TK-7-F contains 1 NPN and 1 PNP transistor, while the RN1611(TE85L,F) contains 2 NPN transistors. Direct substitution is possible only if the circuit design does not require the PNP transistor functionality.

Q: Are the package footprints identical?

A: Both parts use SC-74/SOT-457 surface mount packages. The physical footprint and pin layout are compatible, allowing for direct PCB placement without layout modifications.

Q: What are the key electrical parameters that determine substitution eligibility?

A: The critical parameters are maximum collector current (100mA), collector-emitter breakdown voltage (50V), base resistor value (10kOhms), transition frequency (250MHz), and maximum power dissipation (300mW). Both parts meet these specifications.

Q: Do both parts meet the same regulatory compliance standards?

A: Both parts are RoHS compliant and carry MSL 1 (Unlimited) moisture sensitivity ratings. The DCX114TK-7-F is ROHS3 compliant, while the RN1611(TE85L,F) is RoHS compliant. Both are classified as EAR99 for export control purposes.

Q: What is the difference in DC current gain between the two parts?

A: The DCX114TK-7-F specifies a minimum DC current gain (hFE) of 100 @ 1mA, 5V. The RN1611(TE85L,F) specifies a minimum hFE of 120 @ 1mA, 5V. The substitute part exhibits higher current gain, which may affect circuit biasing and should be evaluated in the specific application context.

Q: Are there any storage or handling differences between these parts?

A: Both parts carry MSL 1 (Unlimited) ratings, indicating no moisture sensitivity restrictions. Standard surface mount component handling and storage procedures apply to both devices.

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