DCP56-13 Equivalent & Substitute Parts

Part Overview

The DCP56-13 is an NPN bipolar junction transistor manufactured by Diodes Incorporated, designed for general-purpose switching and amplification applications. It features an 80 V collector-emitter breakdown voltage, 1 A maximum collector current, and 1 W power dissipation in a surface mount SOT-223-3 package. The DCP56-13 is classified as obsolete, making identification of active equivalent and substitute parts essential for ongoing design support and procurement.

Substiute Parts

DCP56-13
Diodes IncorporatedIn Stock: 4067DCP56-13 Datasheet
DCP56-13
Current Part
BCP5616TA
Diodes IncorporatedIn Stock: 4505BCP5616TA Datasheet
BCP5616TA
Direct
BCP56TA
Diodes IncorporatedIn Stock: 6510BCP56TA Datasheet
BCP56TA
Direct
BCP56T1G
onsemiIn Stock: 155407BCP56T1G Datasheet
BCP56T1G
Direct
SBCP56T1G
onsemiIn Stock: 33116SBCP56T1G Datasheet
SBCP56T1G
Direct
SBCP56T3G
onsemiIn Stock: 12170SBCP56T3G Datasheet
SBCP56T3G
Direct
BCP56,115
Nexperia USA Inc.In Stock: 50294BCP56,115 Datasheet
BCP56,115
MFR Recommended
BCP56-10,115
Nexperia USA Inc.In Stock: 3203BCP56-10,115 Datasheet
BCP56-10,115
MFR Recommended
BCP56-10T1G
onsemiIn Stock: 25763BCP56-10T1G Datasheet
BCP56-10T1G
MFR Recommended
BCP56-16
ANBON SEMICONDUCTOR (INT'L) LIMITEDIn Stock: 214459BCP56-16 Datasheet
BCP56-16
MFR Recommended
BCP56-16,135
Nexperia USA Inc.In Stock: 27687BCP56-16,135 Datasheet
BCP56-16,135
MFR Recommended
BCP56-16-TP
Micro Commercial CoIn Stock: 8213BCP56-16-TP Datasheet
BCP56-16-TP
MFR Recommended
BCP56-16T1G
onsemiIn Stock: 495368BCP56-16T1G Datasheet
BCP56-16T1G
MFR Recommended
BCP56-16T3G
onsemiIn Stock: 5655BCP56-16T3G Datasheet
BCP56-16T3G
MFR Recommended
BCP56-16TF
Nexperia USA Inc.In Stock: 2579BCP56-16TF Datasheet
BCP56-16TF
MFR Recommended
BCP5610H6327XTSA1
Infineon TechnologiesIn Stock: 1142BCP5610H6327XTSA1 Datasheet
BCP5610H6327XTSA1
MFR Recommended
BCP56T3G
onsemiIn Stock: 305496BCP56T3G Datasheet
BCP56T3G
MFR Recommended
BSP43,115
Nexperia USA Inc.In Stock: 1831BSP43,115 Datasheet
BSP43,115
MFR Recommended
CZT3019 TR PBFREE
Central Semiconductor CorpIn Stock: 3397CZT3019 TR PBFREE Datasheet
CZT3019 TR PBFREE
MFR Recommended
SBCP56-16T1G
onsemiIn Stock: 46261SBCP56-16T1G Datasheet
SBCP56-16T1G
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 80 V
Current - Collector (Ic) (Max) 1 A
Power - Max 1 W
Frequency - Transition 200 MHz
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V
Current - Collector Cutoff (Max) 100 nA
Operating Temperature Range -55 to 150 °C
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Supplier Device Package SOT-223-3
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the DCP56-13 is determined by strict electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

  • Transistor Type: NPN (required match)
  • Voltage - Collector Emitter Breakdown (Max): 80 V (required match)
  • Current - Collector (Ic) (Max): 1 A (required match)
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA (required match)
  • Current - Collector Cutoff (Max): 100nA (ICBO) (required match)
  • Operating Temperature Range: Must support -55°C to 150°C or broader range

Mechanical Compatibility Criteria:

  • Mounting Type: Surface Mount (required match)
  • Package / Case: TO-261-4, TO-261AA (required match)
  • Supplier Device Package: SOT-223-3 or SOT-223 (compatible variants)

Parameters Permitting Variation:

  • DC Current Gain (hFE): Minimum values of 40 or higher are acceptable
  • Power - Max: Values of 1 W or greater are acceptable
  • Frequency - Transition: Values of 130 MHz or greater are acceptable
  • Product Status: Active parts are preferred over obsolete parts

All substitute parts listed meet the mandatory electrical and mechanical criteria. Variations in DC current gain, power dissipation, and transition frequency represent enhanced or equivalent performance characteristics that do not compromise circuit functionality.

Parameter Comparison

Parameter DCP56-13 BCP5616TA BCP56TA BCP56T1G SBCP56T1G SBCP56T3G BCP56,115 BCP56-10,115 BCP56-10T1G BCP56-16 BCP56-16,135
Manufacturer Diodes Inc. Diodes Inc. Diodes Inc. onsemi onsemi onsemi Nexperia Nexperia onsemi ANBON Nexperia
Transistor Type NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V 80 V 80 V 80 V 80 V 80 V 80 V 80 V 80 V
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100 nA 100 nA 100 nA 100 nA 100 nA 100 nA 100 nA 100 nA 100 nA 100 nA 100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V 100 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 1 W 2 W 2 W 1.5 W 1.5 W 1.5 W 960 mW 960 mW 1.5 W 1.6 W 960 mW
Frequency - Transition 200 MHz 150 MHz 150 MHz 130 MHz 130 MHz 130 MHz 180 MHz 180 MHz 130 MHz 180 MHz
Operating Temperature Range -55 to 150°C -55 to 150°C -55 to 150°C -65 to 150°C -65 to 150°C -65 to 150°C 150°C 150°C -65 to 150°C 150°C 150°C
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223-3 SOT-223-3 SOT-223-3 SOT-223 (TO-261) SOT-223 (TO-261) SOT-223 (TO-261) SOT-223 SOT-223 SOT-223 (TO-261) SOT-223 SOT-223
Product Status Obsolete Active Active Active Active Active Active Active Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

All listed substitute parts are active products with ROHS3 compliance and MSL Level 1 rating, providing long-term availability and environmental compliance advantages over the obsolete DCP56-13.

Primary Substitutes (Diodes Incorporated): BCP5616TA and BCP56TA maintain manufacturer continuity with Diodes Incorporated. Both parts meet all mandatory electrical and mechanical criteria. BCP5616TA offers enhanced DC current gain (100 vs. 40) and increased power dissipation (2 W vs. 1 W). BCP56TA provides identical DC current gain to the DCP56-13 with increased power capability (2 W vs. 1 W).

Secondary Substitutes (onsemi): BCP56T1G, SBCP56T1G, SBCP56T3G, and BCP56-10T1G are manufactured by onsemi and meet all mandatory criteria. SBCP56T1G and SBCP56T3G include automotive-grade qualification (AEC-Q101) and extended operating temperature range (-65°C to 150°C), suitable for applications requiring automotive compliance. All onsemi variants provide 1.5 W power dissipation.

Tertiary Substitutes (Nexperia): BCP56,115, BCP56-10,115, and BCP56-16,135 are manufactured by Nexperia USA Inc. These parts meet all mandatory criteria with transition frequencies of 180 MHz. Operating temperature specification is limited to 150°C maximum (no lower temperature bound specified).

Alternative Substitute (ANBON): BCP56-16 manufactured by ANBON SEMICONDUCTOR meets all mandatory electrical and mechanical criteria with 1.6 W power dissipation and DC current gain of 100. Transition frequency is not specified for this part.

Selection Basis:

  • For applications requiring manufacturer continuity: Select BCP5616TA or BCP56TA
  • For automotive applications: Select SBCP56T1G or SBCP56T3G
  • For high-volume procurement: BCP56-16 offers largest inventory (214,411 pcs)
  • For extended temperature range: Select BCP56T1G, SBCP56T1G, SBCP56T3G, or BCP56-10T1G

Frequently Asked Questions (FAQ)

Q: Can BCP5616TA directly replace DCP56-13 in existing designs?

A: Yes. BCP5616TA meets all mandatory electrical parameters (80 V breakdown, 1 A collector current, 500mV saturation voltage, 100nA cutoff current) and mechanical requirements (SOT-223-3 package, TO-261-4/TO-261AA case). Enhanced DC current gain (100 vs. 40) and increased power dissipation (2 W vs. 1 W) represent performance improvements that do not compromise circuit compatibility.

Q: What is the difference between BCP56TA and BCP5616TA?

A: Both parts are manufactured by Diodes Incorporated and meet all mandatory electrical and mechanical criteria. The primary difference is DC current gain: BCP56TA has minimum hFE of 40 (matching DCP56-13), while BCP5616TA has minimum hFE of 100. Both provide 2 W power dissipation. Selection depends on circuit gain requirements.

Q: Are onsemi BCP56T1G and automotive-grade SBCP56T1G electrically identical?

A: BCP56T1G and SBCP56T1G meet identical electrical specifications (80 V, 1 A, 130 MHz, 1.5 W, hFE 40). SBCP56T1G includes automotive-grade qualification (AEC-Q101) and extended operating temperature range (-65°C to 150°C vs. -65°C to 150°C for BCP56T1G). Both are functionally equivalent for non-automotive applications; SBCP56T1G is required for automotive designs.

Q: Why do some substitute parts specify only 150°C maximum operating temperature without a lower bound?

A: Nexperia and ANBON parts specify 150°C as the maximum junction temperature. The absence of a lower temperature specification in the provided data does not indicate temperature limitation; these parts are suitable for standard industrial temperature ranges. For applications requiring extended low-temperature operation below -55°C, select onsemi variants (BCP56T1G, SBCP56T1G, SBCP56T3G, BCP56-10T1G) which specify -65°C minimum.

Q: Is transition frequency variation significant for substitution?

A: Transition frequency variation (130 MHz to 200 MHz) does not prevent substitution. All substitute parts meet or exceed 130 MHz, providing adequate bandwidth for general-purpose switching and amplification. The DCP56-13 specifies 200 MHz; lower-frequency substitutes (130 MHz to 180 MHz) remain suitable for applications within this frequency range.

Q: Can BCP56-16 be used as a substitute despite unspecified transition frequency?

A: Yes. BCP56-16 meets all mandatory electrical parameters (80 V, 1 A, 500mV saturation, 100nA cutoff) and mechanical requirements (SOT-223 package). The absence of transition frequency specification does not indicate inadequacy; this part is suitable for general-purpose applications. For frequency-critical designs, select parts with specified transition frequency (130 MHz or higher).

Q: What packaging options are available for substitute parts?

A: All substitute parts are available in surface mount SOT-223 or SOT-223-3 packages with TO-261-4 and TO-261AA case designations. Packaging variants include Cut Tape (CT) & Digi-Reel®, Tape & Reel (TR), and standard packaging. Selection depends on procurement and assembly requirements; electrical and mechanical compatibility remains constant across all packaging options.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts are ROHS3 compliant with MSL Level 1 (Unlimited) moisture sensitivity rating, meeting environmental and regulatory requirements equivalent to the DCP56-13.

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