DCP55-16-13 Equivalent & Substitute Parts

Part Overview

The DCP55-16-13 is an NPN bipolar junction transistor manufactured by Diodes Incorporated, rated for 60 V collector-emitter breakdown voltage and 1 A maximum collector current in a surface mount SOT-223-3 package. This device is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and production continuity. The part operates across a temperature range of -55°C to 150°C and delivers 1 W maximum power dissipation with a transition frequency of 200 MHz.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	60	V
Current - Collector (Ic) (Max)	1	A
Power - Max	1	W
Frequency - Transition	200	MHz
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA	—
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 2V	—
Current - Collector Cutoff (Max)	100	nA
Operating Temperature Range	-55 to 150	°C
Mounting Type	Surface Mount	—
Package / Case	TO-261-4, TO-261AA	—
Supplier Device Package	SOT-223-3	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the DCP55-16-13 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): ≥ 60 V
Current - Collector (Ic) (Max): ≥ 1 A
Vce Saturation (Max) @ Ib, Ic: ≤ 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): ≤ 100nA (ICBO)
Mounting Type: Surface Mount
Package / Case: TO-261-4 or TO-261AA compatible
Supplier Device Package: SOT-223 or SOT-223-3 or SOT-223-4
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Secondary Considerations:

Power dissipation capability (≥ 1 W)
DC Current Gain (hFE) minimum specifications
Operating temperature range coverage
Product status (active preferred over obsolete or last-time-buy)

Substitutes are grouped into two categories: direct electrical equivalents with identical or superior ratings, and functional alternatives with enhanced specifications suitable for the same application space.

Parameter Comparison

Part Number	Manufacturer	Vce(BR)max (V)	Ic(Max) (A)	Power (W)	Frequency (MHz)	hFE(Min) @ Ic, Vce	Package	Product Status
DCP55-16-13	Diodes Incorporated	60	1	1	200	100 @ 150mA, 2V	SOT-223-3	Obsolete
BCP5616TA	Diodes Incorporated	80	1	2	150	100 @ 150mA, 2V	SOT-223-3	Active
BCP5516TA	Diodes Incorporated	60	1	2	150	100 @ 150mA, 2V	SOT-223-3	Active
BCP55-16,115	Nexperia USA Inc.	60	1	1.35	180	100 @ 150mA, 2V	SOT-223	Active
2STN1360	STMicroelectronics	60	3	1.6	130	160 @ 1A, 2V	SOT-223	Active
BCP54H6327XTSA1	Infineon Technologies	45	1	2	100	40 @ 150mA, 2V	PG-SOT223-4-10	Last Time Buy
BCP55	onsemi	60	1.5	1.5	—	SOT-223-4	Active
BCP55,115	Nexperia USA Inc.	60	1	1.35	180	63 @ 150mA, 2V	SOT-223	Active
BCP55,135	Nexperia USA Inc.	60	1	1.35	180	63 @ 150mA, 2V	SOT-223	Active
BCP55-10,115	Nexperia USA Inc.	60	1	1.35	180	63 @ 150mA, 2V	SOT-223	Active
BCP55H6327XTSA1	Infineon Technologies	60	1	2	100	40 @ 150mA, 2V	PG-SOT223-4-10	Obsolete

Engineering Selection Recommendations

Tier 1 - Direct Equivalents (Recommended for New Designs):

BCP5516TA (Diodes Incorporated) and BCP55,115 (Nexperia USA Inc.) are the primary recommended substitutes. Both maintain the 60 V collector-emitter breakdown voltage and 1 A maximum collector current of the original DCP55-16-13. BCP5516TA offers enhanced power dissipation (2 W versus 1 W) and is available in active product status with high inventory levels (10,300 units). BCP55,115 provides equivalent electrical performance with 1.35 W power rating and superior transition frequency (180 MHz). Both components are ROHS3 compliant with MSL 1 rating and surface mount SOT-223 packaging compatible with the original footprint.

Tier 2 - Enhanced Specifications (Higher Voltage or Current Rating):

BCP5616TA (Diodes Incorporated) provides increased voltage headroom at 80 V collector-emitter breakdown while maintaining 1 A collector current and 2 W power dissipation. This part is suitable for applications requiring voltage margin above the original 60 V specification. 2STN1360 (STMicroelectronics) offers 3 A maximum collector current at 60 V, enabling use in higher current applications while maintaining the same voltage rating. Both parts are active products with ROHS3 compliance.

Tier 3 - Reduced Specifications (Lower Voltage Rating):

BCP54H6327XTSA1 (Infineon Technologies) operates at 45 V collector-emitter breakdown, below the original 60 V specification. This part is classified as last-time-buy and should not be selected for new designs. Use only when existing designs are constrained to 45 V operation.

Tier 4 - Alternative Manufacturers (Same Base Specifications):

BCP55 (onsemi) provides 1.5 A maximum collector current at 60 V with 1.5 W power dissipation in SOT-223-4 package. This part is active and widely available (145,300 units in stock). BCP55H6327XTSA1 (Infineon Technologies) is marked obsolete and should not be selected for new production.

Compliance and Availability:

All recommended substitutes maintain ROHS3 compliance and MSL 1 moisture sensitivity rating. Selection should prioritize active product status and highest available inventory to ensure supply chain continuity. BCP5516TA and BCP55,115 are preferred for new designs due to active status and superior availability.

Frequently Asked Questions (FAQ)

Q: Can BCP5616TA replace DCP55-16-13 in all applications?

A: BCP5616TA is electrically compatible with DCP55-16-13 for applications operating at or below 60 V. The higher 80 V rating provides additional voltage margin. The 2 W power dissipation exceeds the original 1 W specification, allowing operation in higher power applications. Thermal management and PCB layout must accommodate the increased power capability. Pin configuration and SOT-223-3 package are compatible with the original footprint.

Q: What is the difference between BCP55,115 and BCP55-10,115?

A: Both parts are manufactured by Nexperia USA Inc. with identical electrical specifications: 60 V collector-emitter breakdown, 1 A maximum collector current, 1.35 W power dissipation, and 180 MHz transition frequency. The primary difference is packaging: BCP55,115 is supplied in Tape & Reel (TR) format with 29,795 units in stock, while BCP55-10,115 is supplied in Cut Tape (CT) & Digi-Reel® format with 1,886 units in stock. Selection depends on production volume and assembly equipment compatibility.

Q: Is 2STN1360 suitable as a direct replacement?

A: 2STN1360 is electrically compatible at the 60 V and 1 A minimum ratings but offers enhanced specifications: 3 A maximum collector current and 1.6 W power dissipation. The higher current rating makes this part suitable for applications requiring current margin above 1 A. Transition frequency is lower at 130 MHz compared to the original 200 MHz. DC current gain is higher at 160 (minimum) versus 100 (minimum) at specified test conditions. Use this part when higher current capability is required or beneficial.

Q: Why is BCP54H6327XTSA1 not recommended?

A: BCP54H6327XTSA1 operates at 45 V collector-emitter breakdown, which is below the original 60 V specification. This part is classified as last-time-buy, indicating discontinued production and limited future availability. The lower voltage rating restricts use to applications designed for 45 V maximum operation. New designs should not incorporate this part.

Q: Are there package compatibility concerns with SOT-223-4 variants?

A: SOT-223-4 packages (such as BCP55 from onsemi) contain four leads compared to the three-lead SOT-223-3 package of the original DCP55-16-13. While the primary three leads (collector, base, emitter) maintain compatible pinout, the fourth lead (typically connected to collector for thermal enhancement) requires PCB layout modification. Verify footprint compatibility before substitution. SOT-223 and SOT-223-3 packages are directly compatible with the original three-lead layout.

Q: What is the significance of the hFE (DC Current Gain) variation among substitutes?

A: DC current gain (hFE) determines the base current required to achieve specified collector current levels. The original DCP55-16-13 specifies minimum hFE of 100 at 150 mA collector current and 2 V collector-emitter voltage. Substitutes with lower hFE (such as BCP54H6327XTSA1 and BCP55H6327XTSA1 at 40 minimum) require higher base drive current for equivalent collector current. Substitutes with higher hFE (such as 2STN1360 at 160 minimum) require lower base drive current. Circuit design must account for these differences in bias network calculations.

Q: Can I use BCP55 (onsemi) in a design originally specified for DCP55-16-13?

A: BCP55 from onsemi is electrically compatible with enhanced specifications: 1.5 A maximum collector current versus 1 A, and 1.5 W power dissipation versus 1 W. The part is active with extensive inventory availability. The primary consideration is package compatibility: BCP55 is supplied in SOT-223-4 (four-lead) format versus the original SOT-223-3 (three-lead) format. PCB footprint modification is required to accommodate the fourth lead. Electrical performance is superior, making this part suitable for new designs or redesigns.

Q: What compliance certifications apply to all recommended substitutes?

A: All substitute parts listed maintain ROHS3 compliance and MSL 1 (unlimited moisture sensitivity) rating, matching the original DCP55-16-13 specifications. REACH status is unaffected for all parts. ECCN classification is EAR99 for all components. These certifications ensure regulatory compliance for commercial and industrial applications in regions requiring RoHS and REACH adherence.

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