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DB2S31000L Equivalent & Substitute Parts
Part Overview
The DB2S31000L is a Schottky diode manufactured by Panasonic Electronic Components, rated for 30 V DC reverse voltage and 200 mA average rectified current in a surface mount SSMini2-F5-B package. This component is discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives from active manufacturers. Substitute parts must maintain compatibility with the original electrical specifications and mounting requirements while offering continued availability and supply chain reliability.
Substiute Parts
Key Parameters
| Parameter | DB2S31000L Value |
|---|---|
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Current - Average Rectified (Io) | 200 mA |
| Voltage - Forward (Vf) (Max) @ If | 470 mV @ 200 mA |
| Speed Classification | Small Signal ≤ 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 1.6 ns |
| Current - Reverse Leakage @ Vr | 200 µA @ 30 V |
| Capacitance @ Vr, F | 4.5 pF @ 10V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | SC-79, SOD-523 |
| Operating Temperature - Junction (Max) | 125°C |
| RoHS Status | RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Substitute Part Grouping Explanation
Substitution of the DB2S31000L is determined by strict adherence to the following electrical and mechanical parameters:
Primary Substitution Criteria:
- Voltage - DC Reverse (Vr) (Max): Must equal or exceed 30 V
- Current - Average Rectified (Io): Must equal or exceed 200 mA
- Technology: Schottky diode type
- Mounting Type: Surface Mount
- Package / Case: SC-79 or SOD-523 compatible
Secondary Compatibility Factors:
- Forward voltage (Vf) characteristics within acceptable operating range
- Reverse leakage current performance
- Operating temperature range compatibility
- RoHS and environmental compliance status
Substitute parts are grouped into two categories based on electrical performance alignment with the original specification:
Category A - Direct Electrical Equivalents: Parts matching 30 V / 200 mA ratings with comparable forward voltage and leakage characteristics.
Category B - Functional Alternatives: Parts with 30 V / 200 mA ratings but differing secondary electrical characteristics, suitable for applications where forward voltage or leakage variations are acceptable.
Parameter Comparison
| Part Number | Manufacturer | Vr (Max) | Io | Vf (Max) @ If | trr | Reverse Leakage @ Vr | Package | Product Status |
|---|---|---|---|---|---|---|---|---|
| DB2S31000L | Panasonic | 30 V | 200 mA | 470 mV @ 200 mA | 1.6 ns | 200 µA @ 30 V | SOD-523 | Discontinued |
| PMEG3002AEB,115 | Nexperia USA Inc. | 30 V | 200 mA | 480 mV @ 200 mA | — | 10 µA @ 10 V | SOD-523 | Active |
| RB520S30T1G | onsemi | 30 V | 200 mA | 600 mV @ 200 mA | — | 1 µA @ 10 V | SOD-523 | Active |
| RB521SM-30FHT2R | Rohm Semiconductor | 30 V | 200 mA | 470 mV @ 200 mA | — | 30 µA @ 10 V | SOD-523 | Active |
| RB521SM-30T2R | Rohm Semiconductor | 30 V | 200 mA | 470 mV @ 200 mA | — | 30 µA @ 10 V | SOD-523 | Active |
| SBAT54XV2T1G | onsemi | 30 V | 200 mA | 800 mV @ 100 mA | 5 ns | 2 µA @ 25 V | SOD-523 | Active |
| SBR0230T5-7 | Diodes Incorporated | 30 V | 200 mA | 610 mV @ 200 mA | 5 ns | 2 µA @ 30 V | SOD-523 | Active |
| PMEG2005EB,115 | Nexperia USA Inc. | 20 V | 500 mA | 480 mV @ 500 mA | — | 30 µA @ 10 V | SOD-523 | Active |
| RB751S40T5G | onsemi | 30 V | 30 mA | 370 mV @ 1 mA | — | 500 nA @ 30 V | SOD-523 | Active |
Engineering Selection Recommendations
Primary Substitutes (Direct Equivalents):
PMEG3002AEB,115 (Nexperia USA Inc.) and RB521SM-30T2R (Rohm Semiconductor) are the preferred substitutes. Both parts match the 30 V / 200 mA electrical specification with forward voltage characteristics within 10 mV of the original. PMEG3002AEB,115 carries automotive-grade qualification (AEC-Q100) and ROHS3 compliance. RB521SM-30T2R offers higher inventory availability (229,100 units) and maintains the 470 mV forward voltage specification. Both are available in active production status.
Secondary Substitutes (Functional Alternatives):
RB520S30T1G (onsemi) and SBR0230T5-7 (Diodes Incorporated) satisfy the 30 V / 200 mA core requirements with acceptable performance variations. RB520S30T1G exhibits superior reverse leakage performance (1 µA @ 10 V) and extended operating temperature range (-55°C to 150°C). SBR0230T5-7 utilizes Super Barrier technology with 5 ns reverse recovery time and 2 µA reverse leakage, suitable for applications requiring faster switching characteristics.
Not Recommended:
PMEG2005EB,115 operates at reduced reverse voltage (20 V maximum), making it unsuitable for 30 V applications. RB751S40T5G is rated for only 30 mA average rectified current, insufficient for 200 mA circuit requirements. SBAT54XV2T1G exhibits elevated forward voltage (800 mV @ 100 mA), introducing unacceptable power dissipation in 200 mA applications.
Frequently Asked Questions (FAQ)
Q: Can PMEG2005EB,115 replace DB2S31000L?
A: No. PMEG2005EB,115 is rated for 20 V maximum reverse voltage, while DB2S31000L requires 30 V operation. This part is not suitable for direct substitution.
Q: What is the primary difference between PMEG3002AEB,115 and RB521SM-30T2R?
A: Both parts meet the 30 V / 200 mA specification. PMEG3002AEB,115 carries automotive qualification (AEC-Q100) and offers lower reverse leakage (10 µA @ 10 V). RB521SM-30T2R provides significantly higher inventory availability (229,100 units) and identical forward voltage performance (470 mV @ 200 mA).
Q: Are all substitute parts compatible with the SOD-523 package footprint?
A: Yes. All recommended substitutes use SOD-523 or SC-79 package designations, ensuring mechanical and electrical compatibility with the original DB2S31000L footprint.
Q: Why is RB751S40T5G not recommended?
A: RB751S40T5G is rated for 30 mA average rectified current, which is insufficient for applications requiring 200 mA operation. This part cannot handle the specified current load.
Q: What is the significance of reverse recovery time (trr) in substitute selection?
A: Reverse recovery time affects switching speed and switching losses. DB2S31000L specifies 1.6 ns. Substitutes with higher trr values (such as SBAT54XV2T1G at 5 ns) introduce slower switching characteristics but remain functionally compatible for non-critical timing applications.
Q: Do all substitutes maintain RoHS compliance?
A: Yes. All active substitute parts carry ROHS3 compliance status, maintaining environmental and regulatory compatibility with the original DB2S31000L specification.
Q: Can SBR0230T5-7 be used in place of DB2S31000L?
A: Yes. SBR0230T5-7 meets the 30 V / 200 mA specification with acceptable forward voltage (610 mV @ 200 mA) and superior reverse leakage performance (2 µA @ 30 V). The Super Barrier technology provides faster switching characteristics (5 ns trr) suitable for high-frequency applications.
Q: What is the impact of forward voltage differences between substitutes?
A: Forward voltage variations directly affect power dissipation and circuit efficiency. DB2S31000L specifies 470 mV @ 200 mA. Substitutes with higher Vf values (such as SBAT54XV2T1G at 800 mV @ 100 mA) generate increased heat and power loss. Selection depends on thermal design and efficiency requirements of the application.
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