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DB2S30900L Equivalent & Substitute Parts
Part Overview
The DB2S30900L is a Schottky diode manufactured by Panasonic Electronic Components, rated for 30 V DC reverse voltage and 100 mA average rectified current in a surface mount SSMini2-F5-B package. This component is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute parts for ongoing design requirements and production needs. Equivalent parts must maintain compatibility with the original electrical specifications and mechanical package constraints while offering active product status and improved availability.
Substiute Parts
Key Parameters
| Parameter | DB2S30900L Value |
|---|---|
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Current - Average Rectified (Io) | 100 mA |
| Voltage - Forward (Vf) (Max) @ If | 580 mV @ 100 mA |
| Technology | Schottky |
| Reverse Recovery Time (trr) | 1.3 ns |
| Current - Reverse Leakage @ Vr | 2 µA @ 30 V |
| Capacitance @ Vr, F | 3 pF @ 10 V, 1 MHz |
| Package / Case | SC-79, SOD-523 |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 125°C |
| RoHS Status | RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Substitute Part Grouping Explanation
Substitution of the DB2S30900L is determined by strict adherence to the following electrical and mechanical parameters:
Primary Substitution Criteria:
- Voltage - DC Reverse (Vr) (Max): Must equal or exceed 30 V
- Package / Case: Must be SC-79 or SOD-523 compatible
- Mounting Type: Must be Surface Mount
- Technology: Schottky or Super Barrier rectifier diodes
- Current - Average Rectified (Io): Must support minimum 100 mA operation
Secondary Compatibility Factors:
- Reverse Recovery Time (trr): Lower values indicate faster switching performance
- Current - Reverse Leakage @ Vr: Lower values indicate reduced parasitic current
- Operating Temperature - Junction: Must support thermal requirements of the application
- RoHS and MSL Compliance: Must meet regulatory and manufacturing requirements
Substitute parts are grouped into two categories:
Category A - Direct Electrical Equivalents (100 mA rated): Parts with 100 mA current rating that provide identical electrical performance within the specified voltage and package constraints.
Category B - Higher Current Capacity Substitutes (200 mA rated): Parts with 200 mA current rating that exceed the original specification, providing enhanced current handling capability while maintaining voltage and package compatibility. These parts are suitable for applications where increased current margin is beneficial.
Category C - Lower Current Substitutes (30 mA rated): Parts with reduced current ratings that are suitable only for applications where the load current does not exceed the specified maximum.
Parameter Comparison
| Manufacturer Part Number | Manufacturer | Vr (Max) | Io (mA) | Vf (Max) @ If | Package | Product Status | Operating Temp (Max) | RoHS Status |
|---|---|---|---|---|---|---|---|---|
| DB2S30900L | Panasonic Electronic Components | 30 V | 100 | 580 mV @ 100 mA | SC-79, SOD-523 | Discontinued | 125°C | RoHS Compliant |
| RB510SM-30T2R | Rohm Semiconductor | 30 V | 100 | 460 mV @ 10 mA | SC-79, SOD-523 | Active | 150°C | ROHS3 Compliant |
| RB510SM-30FHT2R | Rohm Semiconductor | 30 V | 100 | 460 mV @ 10 mA | SC-79, SOD-523 | Not For New Designs | 150°C | ROHS3 Compliant |
| PMEG3002AEB,115 | Nexperia USA Inc. | 30 V | 200 | 480 mV @ 200 mA | SC-79, SOD-523 | Active | 125°C | ROHS3 Compliant |
| RB520S30T1G | onsemi | 30 V | 200 | 600 mV @ 200 mA | SC-79, SOD-523 | Active | 150°C | ROHS3 Compliant |
| SBAT54XV2T1G | onsemi | 30 V | 200 | 800 mV @ 100 mA | SC-79, SOD-523 | Active | 125°C | ROHS3 Compliant |
| SBR0230T5-7 | Diodes Incorporated | 30 V | 200 | 610 mV @ 200 mA | SC-79, SOD-523 | Active | 150°C | ROHS3 Compliant |
| RB751S40T5G | onsemi | 30 V | 30 | 370 mV @ 1 mA | SC-79, SOD-523 | Active | 150°C | ROHS3 Compliant |
Engineering Selection Recommendations
Recommended Primary Substitute: RB510SM-30T2R
The RB510SM-30T2R from Rohm Semiconductor is the optimal substitute for the DB2S30900L. This part maintains identical electrical specifications (30 V, 100 mA) and package compatibility (SC-79, SOD-523). The RB510SM-30T2R is in Active product status with high inventory availability (56,300 units), ensuring long-term supply continuity. The part carries ROHS3 compliance and AEC-Q101 automotive qualification, exceeding the original RoHS Compliant status. Operating temperature maximum of 150°C provides enhanced thermal margin compared to the original 125°C specification.
Alternative Substitute: PMEG3002AEB,115
The PMEG3002AEB,115 from Nexperia USA Inc. provides a higher current capacity option (200 mA versus 100 mA) while maintaining 30 V voltage rating and SC-79/SOD-523 package compatibility. This part is Active with substantial inventory (5,150 units) and carries automotive-grade qualification (AEC-Q100). Forward voltage of 480 mV @ 200 mA is lower than the original specification, indicating improved efficiency. This substitute is suitable for applications where increased current margin is required.
Secondary Alternative: SBR0230T5-7
The SBR0230T5-7 from Diodes Incorporated is a Super Barrier rectifier technology diode rated for 30 V and 200 mA. This part offers Active product status with extended operating temperature range (-65°C to 150°C) and ROHS3 compliance. The Super Barrier technology provides lower forward voltage characteristics compared to standard Schottky diodes. This substitute is appropriate for applications requiring enhanced current capacity and thermal performance.
Not Recommended for New Designs: RB510SM-30FHT2R
The RB510SM-30FHT2R carries a "Not For New Designs" product status designation, indicating manufacturer discontinuation plans. Although electrically equivalent to the DB2S30900L, this part should not be selected for new design implementations.
Limited Application Substitute: RB751S40T5G
The RB751S40T5G is rated for only 30 mA average rectified current, which is below the original 100 mA specification. This part is suitable only for applications where the actual load current does not exceed 30 mA and where the lower forward voltage (370 mV @ 1 mA) provides design benefits.
Frequently Asked Questions (FAQ)
Q: Can the RB510SM-30T2R be used as a direct replacement for the DB2S30900L?
A: Yes. The RB510SM-30T2R is a direct electrical and mechanical equivalent. Both parts are rated for 30 V reverse voltage, 100 mA average rectified current, and use the SC-79/SOD-523 package. The RB510SM-30T2R is in Active product status with superior availability and thermal specifications.
Q: What is the difference between the 100 mA and 200 mA rated substitutes?
A: The 100 mA rated parts (RB510SM-30T2R, RB510SM-30FHT2R) match the original current specification exactly. The 200 mA rated parts (PMEG3002AEB,115, RB520S30T1G, SBAT54XV2T1G, SBR0230T5-7) provide double the current capacity. Selection depends on application requirements. If the circuit draws 100 mA or less, both categories are suitable. If higher current margin is desired, 200 mA parts provide additional headroom.
Q: Are all substitute parts compatible with the original PCB layout?
A: Yes. All substitute parts listed use the SC-79 or SOD-523 package designation with surface mount technology. PCB footprints designed for the DB2S30900L are compatible with all listed substitutes without modification.
Q: What is the significance of the "Not For New Designs" status on the RB510SM-30FHT2R?
A: This designation indicates that the manufacturer (Rohm Semiconductor) has announced plans to discontinue this part. While currently available, it should not be selected for new product designs due to future supply uncertainty. The RB510SM-30T2R is the recommended alternative from the same manufacturer.
Q: How do forward voltage specifications affect circuit performance?
A: Forward voltage (Vf) determines the voltage drop across the diode during conduction. Lower Vf values result in reduced power dissipation and improved efficiency. The DB2S30900L specifies 580 mV @ 100 mA. Substitutes with lower Vf (such as RB510SM-30T2R at 460 mV @ 10 mA or PMEG3002AEB,115 at 480 mV @ 200 mA) provide better efficiency. Substitutes with higher Vf (such as SBAT54XV2T1G at 800 mV @ 100 mA) increase power dissipation. Circuit design must account for these differences in voltage drop calculations.
Q: What does reverse leakage current indicate?
A: Reverse leakage current (Ir) is the small current that flows through the diode when reverse biased. Lower values indicate better diode quality and reduced parasitic current paths. The DB2S30900L specifies 2 µA @ 30 V. Most substitutes maintain similar or lower leakage specifications, ensuring equivalent or improved performance in reverse bias conditions.
Q: Are all substitute parts RoHS compliant?
A: Yes. All listed substitute parts carry either RoHS Compliant or ROHS3 Compliant status, meeting regulatory requirements for hazardous substance restrictions. The original DB2S30900L is RoHS Compliant, and all substitutes meet or exceed this compliance level.
Q: What is the Moisture Sensitivity Level (MSL) and why does it matter?
A: MSL indicates the maximum time a component can be exposed to ambient conditions before soldering. MSL 1 (Unlimited) means the component has no moisture sensitivity restrictions and can be stored indefinitely without special drying procedures. All listed parts, including the original DB2S30900L, carry MSL 1 rating, ensuring identical handling requirements.
Q: Can the RB751S40T5G be used in place of the DB2S30900L?
A: The RB751S40T5G is suitable only for applications where the actual circuit current does not exceed 30 mA. The original DB2S30900L is rated for 100 mA, and the RB751S40T5G cannot safely handle this current level. Use this part only if application requirements confirm that maximum current draw is 30 mA or less.
Q: What is the difference between Schottky and Super Barrier rectifier technologies?
A: Both are fast-switching rectifier technologies suitable for high-frequency applications. Super Barrier diodes (such as SBR0230T5-7) typically offer lower forward voltage and faster switching characteristics compared to standard Schottky diodes. For the DB2S30900L application, both technologies are functionally equivalent at the specified voltage and current ratings.
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