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D45H5 Equivalent & Substitute Parts
Part Overview
The D45H5 is a PNP bipolar junction transistor manufactured by STMicroelectronics, rated for 45 V collector-emitter breakdown voltage and 10 A maximum collector current in a Through Hole TO-220-3 package. This component is classified as obsolete, necessitating identification of active equivalent parts for ongoing design requirements and procurement needs. The D45H5 delivers 50 W maximum power dissipation and operates at junction temperatures up to 150°C.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP | — |
| Current - Collector (Ic) (Max) | 10 | A |
| Voltage - Collector Emitter Breakdown (Max) | 45 | V |
| Vce Saturation (Max) @ Ib, Ic | 1 V @ 400 mA, 8 A | — |
| Current - Collector Cutoff (Max) | 10 | µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 4 A, 1 V | — |
| Power - Max | 50 | W |
| Operating Temperature (TJ) | 150 | °C |
| Package / Case | TO-220-3 | — |
| Mounting Type | Through Hole | — |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitution of the D45H5 is determined by strict equivalence across the following critical parameters:
Mandatory Matching Parameters:
- Transistor Type: PNP
- Package / Case: TO-220-3
- Mounting Type: Through Hole
- Current - Collector (Ic) (Max): 10 A
- Vce Saturation (Max) @ Ib, Ic: 1 V @ 400 mA, 8 A
- Current - Collector Cutoff (Max): 10 µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4 A, 1 V
Allowable Variation Parameters:
- Voltage - Collector Emitter Breakdown (Max): Equal to or greater than 45 V
- Power - Max: Equal to or greater than 50 W
- Operating Temperature (TJ): Equal to or greater than 150°C
- RoHS Status: ROHS3 Compliant or equivalent
The D45H11G from onsemi meets the mandatory matching criteria and provides enhanced voltage rating (80 V) and extended operating temperature range (−55°C to 150°C). However, the D45H11G exhibits reduced maximum power dissipation (2 W versus 50 W), which represents a significant limitation in thermal capability.
Parameter Comparison
| Parameter | D45H5 (STMicroelectronics) | D45H11G (onsemi) | Compatibility |
|---|---|---|---|
| Transistor Type | PNP | PNP | Match |
| Current - Collector (Ic) (Max) | 10 A | 10 A | Match |
| Voltage - Collector Emitter Breakdown (Max) | 45 V | 80 V | Substitute exceeds requirement |
| Vce Saturation (Max) @ Ib, Ic | 1 V @ 400 mA, 8 A | 1 V @ 400 mA, 8 A | Match |
| Current - Collector Cutoff (Max) | 10 µA | 10 µA | Match |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 4 A, 1 V | 40 @ 4 A, 1 V | Match |
| Power - Max | 50 W | 2 W | Substitute below requirement |
| Operating Temperature (TJ) | 150°C | −55°C to 150°C | Substitute meets or exceeds |
| Package / Case | TO-220-3 | TO-220-3 | Match |
| Mounting Type | Through Hole | Through Hole | Match |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | Match |
Engineering Selection Recommendations
The D45H11G from onsemi is an active product with ROHS3 compliance and extended operating temperature range, addressing the obsolescence of the D45H5. Direct substitution is limited by the D45H11G's maximum power dissipation specification of 2 W, which is substantially lower than the D45H5's 50 W rating.
Selection Criteria:
-
For applications requiring ≤2 W dissipation: The D45H11G provides electrical equivalence with enhanced voltage margin (80 V) and temperature range (−55°C to 150°C). Pinout compatibility and saturation characteristics ensure functional interchangeability within thermal constraints.
-
For applications requiring >2 W dissipation: The D45H11G is not suitable. Alternative PNP transistors with 10 A collector current, TO-220-3 package, and ≥50 W power rating must be evaluated independently.
Both parts maintain ROHS3 compliance and REACH unaffected status, supporting regulatory requirements for new designs and procurement.
Frequently Asked Questions (FAQ)
Q: Can the D45H11G directly replace the D45H5 in all applications?
A: Electrical substitution is valid only for applications dissipating ≤2 W. The D45H11G matches all critical electrical parameters (collector current, saturation voltage, current gain, and cutoff current) and shares the TO-220-3 Through Hole package. However, thermal design must account for the reduced power dissipation rating.
Q: What is the significance of the voltage rating difference (45 V vs. 80 V)?
A: The D45H11G's higher breakdown voltage (80 V) provides additional design margin and is compatible with circuits designed for the D45H5's 45 V rating. No circuit modification is required due to this parameter difference.
Q: Are there packaging differences between the D45H5 and D45H11G?
A: Both transistors use the TO-220-3 Through Hole package. The D45H5 is supplied in standard packaging, while the D45H11G is supplied in Tube packaging. PCB footprint and lead configuration are identical.
Q: How does the operating temperature range affect substitution?
A: The D45H11G extends the lower operating limit to −55°C, compared to the D45H5's unspecified lower limit. This enhancement supports applications requiring wider temperature operation without circuit redesign.
Q: What compliance certifications apply to both parts?
A: Both the D45H5 and D45H11G are ROHS3 compliant and REACH unaffected, meeting current regulatory requirements for electronic component procurement and use.
Q: Why is the D45H5 classified as obsolete?
A: Obsolescence reflects the part's discontinuation by STMicroelectronics. The D45H11G from onsemi provides an active alternative with equivalent electrical characteristics and enhanced specifications.
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