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D45C11 Equivalent & Substitute Parts
Part Overview
The D45C11 is a PNP bipolar junction transistor manufactured by onsemi, rated for 80 V collector-emitter breakdown voltage and 4 A maximum collector current in a TO-220-3 through-hole package. This device is classified as obsolete, which necessitates identification of equivalent and substitute components for ongoing design support and procurement continuity. The D45C11 delivers 60 W maximum power dissipation with a 32 MHz transition frequency, suitable for general-purpose switching and amplification applications requiring moderate current handling.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP | — |
| Voltage - Collector Emitter Breakdown (Max) | 80 | V |
| Current - Collector (Ic) (Max) | 4 | A |
| Power - Max | 60 | W |
| Frequency - Transition | 32 | MHz |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 1A | — |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 200mA, 1V | — |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Package / Case | TO-220-3 | — |
| Mounting Type | Through Hole | — |
Substitute Part Grouping Explanation
Substitution of the D45C11 is determined by strict adherence to the following electrical and mechanical parameters:
Primary Substitution Criteria:
- Transistor type must be PNP
- Voltage - Collector Emitter Breakdown (Max) must be 80 V or greater
- Current - Collector (Ic) (Max) must be 4 A or greater
- Package / Case must be TO-220-3
- Mounting type must be Through Hole
- Operating temperature range must encompass -55°C to 150°C
Secondary Compatibility Factors:
- Vce saturation characteristics
- DC current gain (hFE) specifications
- Transition frequency performance
- Power dissipation capability
The substitute parts identified below meet or exceed the primary substitution criteria, ensuring functional compatibility in applications designed for the D45C11. Variations in secondary parameters reflect different device architectures and performance classes within the PNP transistor category.
Parameter Comparison
| Parameter | D45C11 (onsemi) | D45VH10G (onsemi) | TIP32BG (onsemi) | TIP42BG (onsemi) | D45C11 (Solid State Inc.) |
|---|---|---|---|---|---|
| Transistor Type | PNP | PNP | PNP | PNP | PNP |
| Voltage - Collector Emitter Breakdown (Max) | 80 V | 80 V | 80 V | 80 V | 80 V |
| Current - Collector (Ic) (Max) | 4 A | 15 A | 3 A | 6 A | 4 A |
| Power - Max | 60 W | 83 W | 2 W | 2 W | 30 W |
| Frequency - Transition | 32 MHz | 50 MHz | 3 MHz | 3 MHz | 40 MHz |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 1A | 1V @ 800mA, 8A | 1.2V @ 375mA, 3A | 1.5V @ 600mA, 6A | 500mV @ 50mA, 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 200mA, 1V | 20 @ 4A, 1V | 10 @ 3A, 4V | 15 @ 3A, 4V | 40 @ 200mA, 1V |
| Operating Temperature Range | -55 to 150°C | -55 to 150°C | -65 to 150°C | -65 to 150°C | -55 to 150°C |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| Product Status | Obsolete | Active | Active | Last Time Buy | Active |
| RoHS Status | Not Specified | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
D45VH10G (onsemi) - Primary Substitute
The D45VH10G is an active product offering superior electrical performance with 15 A maximum collector current and 83 W power dissipation. This device exceeds the D45C11 specifications across all critical parameters while maintaining identical voltage rating and package form factor. The D45VH10G is ROHS3 compliant and carries active product status, ensuring long-term availability and supply chain stability. Selection of this substitute is appropriate for applications requiring enhanced current handling capacity or thermal performance margins.
D45C11 (Solid State Inc.) - Parametric Equivalent
The D45C11 from Solid State Inc. provides parametric equivalence to the onsemi D45C11 with identical electrical specifications for collector current, voltage rating, and saturation characteristics. This device is ROHS3 compliant and maintains active product status. The primary distinction is reduced maximum power dissipation (30 W versus 60 W) and slightly elevated transition frequency (40 MHz versus 32 MHz). This substitute is suitable for applications where the original onsemi device is unavailable and thermal design margins accommodate the lower power rating.
TIP42BG (onsemi) - Current-Rated Substitute
The TIP42BG is a last-time-buy product offering 6 A maximum collector current, exceeding the D45C11 by 50 percent. This device maintains the 80 V voltage rating and TO-220-3 package compatibility. The TIP42BG exhibits reduced power dissipation (2 W) and lower transition frequency (3 MHz) compared to the D45C11, reflecting a different performance class. ROHS3 compliance is confirmed. Selection of this substitute is appropriate only when current capacity enhancement is required and reduced power dissipation is acceptable for the application.
TIP32BG (onsemi) - Lower Current Alternative
The TIP32BG is an active product with 3 A maximum collector current, falling below the D45C11 specification. This device maintains 80 V voltage rating and TO-220-3 package compatibility with extended operating temperature range (-65°C to 150°C). The TIP32BG exhibits significantly reduced power dissipation (2 W) and transition frequency (3 MHz). ROHS3 compliance is confirmed. Selection of this substitute is appropriate only for applications where 3 A collector current is sufficient and reduced power dissipation is acceptable.
Frequently Asked Questions (FAQ)
Q: Can the D45VH10G directly replace the D45C11 in all applications?
A: The D45VH10G meets or exceeds all primary substitution criteria: 80 V voltage rating, 15 A collector current (exceeding the 4 A requirement), TO-220-3 package, and through-hole mounting. Direct substitution is electrically valid. However, the higher current rating and power dissipation may require thermal design review in applications with tight thermal constraints.
Q: Why is the TIP32BG listed as a substitute when its maximum collector current is only 3 A?
A: The TIP32BG is included as a substitute option for applications where the design can operate at reduced current levels. It meets the voltage rating, package, and mounting requirements. Selection of this device requires confirmation that the application circuit functions correctly at 3 A maximum collector current.
Q: What is the significance of the D45C11 from Solid State Inc. having different power dissipation than the onsemi version?
A: The Solid State Inc. D45C11 maintains identical electrical specifications for the critical parameters (voltage, current, saturation characteristics, and gain) but specifies 30 W maximum power dissipation versus 60 W for the onsemi device. This reflects different thermal design or measurement methodology. Applications must verify that thermal design margins remain adequate with the lower power rating.
Q: Are all substitute parts ROHS3 compliant?
A: The D45VH10G, TIP32BG, TIP42BG, and D45C11 (Solid State Inc.) are all ROHS3 compliant. The original onsemi D45C11 does not specify RoHS status in the provided data.
Q: What is the difference between "Last Time Buy" and "Active" product status?
A: "Active" status indicates the manufacturer continues production and supports long-term availability. "Last Time Buy" status indicates the manufacturer has announced end-of-life, with a final purchase opportunity before discontinuation. The TIP42BG carries last-time-buy status, requiring consideration of long-term supply requirements.
Q: Can the TIP42BG be used as a direct replacement despite its last-time-buy status?
A: The TIP42BG meets primary substitution criteria and is electrically compatible. However, last-time-buy status indicates limited future availability. Selection of this device requires confirmation of adequate inventory for the product lifecycle or transition planning to an active alternative such as the D45VH10G.
Q: How do the transition frequency differences affect substitution decisions?
A: The D45C11 specifies 32 MHz transition frequency, while the D45VH10G offers 50 MHz and the TIP32BG and TIP42BG specify 3 MHz. Higher transition frequency supports faster switching applications. Lower transition frequency may limit performance in high-frequency switching circuits. Application circuit requirements determine whether frequency differences are acceptable.
Q: Are there package or mounting differences between the substitute parts?
A: All substitute parts maintain TO-220-3 package form factor and through-hole mounting type, ensuring mechanical compatibility with the D45C11. Packaging format (tube, bulk) differs but does not affect electrical or mechanical compatibility.
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