Equivalent & Substitute Parts for D1G-T General Purpose Rectifier Diode

Part Overview

The D1G-T is a general purpose rectifier diode manufactured by Diodes Incorporated, rated for 50 V DC reverse voltage and 1 A average rectified current in a T-1 axial through-hole package. This component is classified as Active product status and is ROHS3 compliant. Substitute parts are necessary when the T-1 package form factor is not required, when alternative packaging formats (Cut Tape, Tape & Reel) are preferred for manufacturing processes, or when specific performance characteristics such as faster recovery time or extended temperature ranges are needed for application requirements.

Substiute Parts

D1G-T
Diodes IncorporatedIn Stock: 1015D1G-T Datasheet
D1G-T
Current Part
1N4001-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 15031N4001-E3/54 Datasheet
1N4001-E3/54
MFR Recommended
1N4001-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 14541N4001-E3/73 Datasheet
1N4001-E3/73
MFR Recommended
1N4001-TP
Micro Commercial CoIn Stock: 17121N4001-TP Datasheet
1N4001-TP
MFR Recommended
1N4001G
Taiwan Semiconductor CorporationIn Stock: 16011N4001G Datasheet
1N4001G
MFR Recommended
1N4001GP-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 77151N4001GP-E3/54 Datasheet
1N4001GP-E3/54
MFR Recommended
1N4001GP-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 11851N4001GP-E3/73 Datasheet
1N4001GP-E3/73
MFR Recommended
1N4001RLG
onsemiIn Stock: 18251N4001RLG Datasheet
1N4001RLG
MFR Recommended
1N4933G
Good-Ark SemiconductorIn Stock: 7841N4933G Datasheet
1N4933G
MFR Recommended
1N4933RLG
onsemiIn Stock: 38581N4933RLG Datasheet
1N4933RLG
MFR Recommended
UF4001
Fairchild SemiconductorIn Stock: 30469UF4001 Datasheet
UF4001
MFR Recommended
UF4001-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 6227UF4001-E3/54 Datasheet
UF4001-E3/54
MFR Recommended
UF4001-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 4433UF4001-E3/73 Datasheet
UF4001-E3/73
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 50 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A V
Speed Classification Standard Recovery >500ns, > 200mA (Io) -
Current - Reverse Leakage @ Vr 5 µA @ 50 V
Mounting Type Through Hole -
Operating Temperature - Junction -65°C ~ 150°C °C
RoHS Status ROHS3 Compliant -

Substitute Part Grouping Explanation

Substitution of the D1G-T is determined by electrical parameter equivalence and mechanical compatibility. All substitute parts must meet or exceed the following criteria:

Mandatory Electrical Parameters:

  • Voltage - DC Reverse (Vr) (Max): 50 V minimum
  • Current - Average Rectified (Io): 1 A minimum
  • Mounting Type: Through Hole
  • RoHS Status: ROHS3 Compliant

Acceptable Variations:

  • Voltage - Forward (Vf) (Max) @ If: 1.0 V to 1.2 V @ 1 A
  • Current - Reverse Leakage @ Vr: 5 µA to 10 µA @ 50 V
  • Speed Classification: Standard Recovery (>500ns) or Fast Recovery (≤500ns)
  • Operating Temperature - Junction: Minimum -55°C to maximum 150°C or higher
  • Package / Case: DO-204AL (DO-41) axial or T-1 axial configurations

Substitute parts are grouped by package type and recovery speed characteristics. Parts with identical electrical ratings but different package formats (Cut Tape vs. Tape & Reel) are considered direct substitutes. Parts with faster recovery times (Fast Recovery ≤500ns) are acceptable substitutes for Standard Recovery applications.

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) Io Vf (Max) @ If Speed Ir @ Vr Package / Case Tj (Operating) Product Status
D1G-T Diodes Incorporated 50 V 1 A 1 V @ 1 A Standard Recovery >500ns 5 µA @ 50 V T1, Axial -65°C ~ 150°C Active
1N4001-E3/54 Vishay General Semiconductor - Diodes Division 50 V 1 A 1.1 V @ 1 A Standard Recovery >500ns 5 µA @ 50 V DO-204AL, DO-41, Axial -55°C ~ 150°C Active
1N4001-E3/73 Vishay General Semiconductor - Diodes Division 50 V 1 A 1.1 V @ 1 A Standard Recovery >500ns 5 µA @ 50 V DO-204AL, DO-41, Axial -55°C ~ 150°C Active
1N4001-TP Micro Commercial Co 50 V 1 A 1.1 V @ 1 A Standard Recovery >500ns 5 µA @ 50 V DO-204AL, DO-41, Axial -55°C ~ 150°C Not For New Designs
1N4001G Taiwan Semiconductor Corporation 50 V 1 A 1 V @ 1 A Standard Recovery >500ns 5 µA @ 50 V DO-204AL, DO-41, Axial -55°C ~ 150°C Active
1N4001GP-E3/54 Vishay General Semiconductor - Diodes Division 50 V 1 A 1.1 V @ 1 A Standard Recovery >500ns 5 µA @ 50 V DO-204AL, DO-41, Axial -65°C ~ 175°C Active
1N4001GP-E3/73 Vishay General Semiconductor - Diodes Division 50 V 1 A 1.1 V @ 1 A Standard Recovery >500ns 5 µA @ 50 V DO-204AL, DO-41, Axial -65°C ~ 175°C Active
1N4001RLG onsemi 50 V 1 A 1.1 V @ 1 A Standard Recovery >500ns 10 µA @ 50 V DO-204AL, DO-41, Axial -65°C ~ 175°C Not For New Designs
1N4933G Good-Ark Semiconductor 50 V 1 A 1.2 V @ 1 A Fast Recovery ≤500ns 5 µA @ 50 V DO-204AL, DO-41, Axial -55°C ~ 125°C Active
1N4933RLG onsemi 50 V 1 A 1.2 V @ 1 A Fast Recovery ≤500ns 5 µA @ 50 V DO-204AL, DO-41, Axial -65°C ~ 150°C Not For New Designs
UF4001 Fairchild Semiconductor 50 V 1 A 1 V @ 1 A Fast Recovery ≤500ns 10 µA @ 50 V DO-204AL, DO-41, Axial -65°C ~ 150°C Active

Engineering Selection Recommendations

For Active Product Status Applications:

The following substitute parts are recommended for new designs and production applications:

  1. 1N4001-E3/54 and 1N4001-E3/73 (Vishay General Semiconductor - Diodes Division): Both parts are Active status with identical electrical specifications to the D1G-T. These parts are suitable for direct substitution in standard recovery applications. The difference between E3/54 and E3/73 designations relates to tape reel specifications and does not affect electrical performance.

  2. 1N4001G (Taiwan Semiconductor Corporation): Active status part with matching forward voltage (1 V @ 1 A) and standard recovery characteristics. Suitable for applications requiring DO-204AL (DO-41) package format.

  3. 1N4001GP-E3/54 and 1N4001GP-E3/73 (Vishay General Semiconductor - Diodes Division): Active status SUPERECTIFIER® series parts with extended operating temperature range (-65°C ~ 175°C) compared to the D1G-T. These parts provide superior thermal performance and are suitable for high-temperature applications.

  4. UF4001 (Fairchild Semiconductor): Active status part with fast recovery characteristics (≤500ns, 50 ns trr). Suitable for applications requiring faster switching performance than standard recovery diodes.

For Legacy or Constrained Applications:

The following parts are Not For New Designs but remain available:

  1. 1N4001-TP (Micro Commercial Co): Not For New Designs status. Use only when existing designs require this specific part number.

  2. 1N4001RLG (onsemi): Not For New Designs status. Reverse leakage current is 10 µA @ 50 V, which exceeds the D1G-T specification of 5 µA @ 50 V.

  3. 1N4933RLG (onsemi): Not For New Designs status. Fast recovery part with 300 ns reverse recovery time.

For Fast Recovery Applications:

  1. 1N4933G (Good-Ark Semiconductor): Active status fast recovery diode with 200 ns reverse recovery time. Operating temperature range is -55°C ~ 125°C, which is more limited than the D1G-T. Suitable for applications requiring faster switching than standard recovery devices.

All substitute parts listed are ROHS3 compliant and REACH unaffected, maintaining regulatory compliance with the D1G-T.

Frequently Asked Questions (FAQ)

Q: Can I substitute the D1G-T with any of the listed parts without circuit modification?

A: Yes, all listed substitute parts meet the mandatory electrical parameters (50 V reverse voltage, 1 A average rectified current, through-hole mounting). However, package form factor differences must be considered. The D1G-T uses a T-1 axial package, while most substitutes use DO-204AL (DO-41) axial packages. Both are axial through-hole packages and are mechanically compatible on standard PCB layouts. Verify PCB footprint compatibility before substitution.

Q: What is the difference between Standard Recovery and Fast Recovery diodes?

A: Standard Recovery diodes have reverse recovery times greater than 500 ns, while Fast Recovery diodes have reverse recovery times of 500 ns or less. The D1G-T is a Standard Recovery device (>500ns). Fast Recovery substitutes such as UF4001 (50 ns) and 1N4933G (200 ns) switch faster and generate less switching noise, making them suitable for higher-frequency applications. Fast Recovery diodes are backward compatible with Standard Recovery applications.

Q: Why do some substitute parts have higher forward voltage drops?

A: Forward voltage (Vf) varies by manufacturer and device technology. The D1G-T specifies 1 V @ 1 A, while some substitutes specify 1.1 V or 1.2 V @ 1 A. These variations are within acceptable ranges for general purpose rectifier applications. Higher forward voltage results in slightly increased power dissipation. For applications sensitive to voltage drop, select parts with lower Vf specifications such as 1N4001G or UF4001 (both 1 V @ 1 A).

Q: What does "Not For New Designs" product status mean?

A: Parts marked "Not For New Designs" are legacy or obsolete components that manufacturers no longer recommend for new circuit designs. These parts remain available for existing production runs and field replacements but should not be selected for new product development. For new designs, select only Active status parts: 1N4001-E3/54, 1N4001-E3/73, 1N4001G, 1N4001GP-E3/54, 1N4001GP-E3/73, 1N4933G, or UF4001.

Q: Are there differences between 1N4001-E3/54 and 1N4001-E3/73?

A: Both parts are electrically identical with the same electrical specifications. The designations E3/54 and E3/73 refer to different tape reel specifications used for automated assembly equipment. E3/54 and E3/73 indicate different reel configurations and tape widths. Select based on your assembly equipment compatibility. Electrical performance is identical.

Q: Can I use 1N4001GP-E3/54 in place of the D1G-T for extended temperature applications?

A: Yes. The 1N4001GP-E3/54 is an Active status part with an extended operating temperature range of -65°C ~ 175°C compared to the D1G-T range of -65°C ~ 150°C. This part is suitable for applications requiring operation above 150°C. All other electrical parameters are equivalent or superior.

Q: What is the significance of reverse leakage current differences?

A: Reverse leakage current (Ir) is the small current that flows through a reverse-biased diode. The D1G-T specifies 5 µA @ 50 V. Some substitutes such as 1N4001RLG specify 10 µA @ 50 V. Higher leakage current increases power dissipation in reverse bias conditions. For applications sensitive to leakage current, select parts with 5 µA specifications: D1G-T, 1N4001-E3/54, 1N4001-E3/73, 1N4001G, 1N4001GP-E3/54, 1N4001GP-E3/73, 1N4933G, or 1N4933RLG.

Q: Is the D1G-T available in packaging formats other than T-1?

A: The D1G-T is specified only in T-1 axial through-hole package. If alternative packaging is required (such as Cut Tape or different reel specifications), substitute parts such as 1N4001-E3/54 (Cut Tape) or 1N4001G (Tape & Reel) provide the same electrical function in different packaging formats.

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