CZDM1003N BK N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The CZDM1003N BK is an N-Channel MOSFET manufactured by Central Semiconductor Corp, rated for 100V drain-to-source voltage with 3A continuous drain current in a surface mount SOT-223 package. This device is classified as obsolete, making identification of functionally equivalent substitute parts essential for ongoing design support and production continuity. Substitute parts must maintain compatibility across electrical ratings, thermal characteristics, and mechanical packaging to ensure direct replacement capability.

Substiute Parts

CZDM1003N BK

Central Semiconductor CorpIn Stock: 1188CZDM1003N BK Datasheet

Current PartRFQ

DMN10H120SE-13

Diodes IncorporatedIn Stock: 1618DMN10H120SE-13 Datasheet

MFR RecommendedRFQ

IRF7451TRPBF

Infineon TechnologiesIn Stock: 51404IRF7451TRPBF Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the CZDM1003N BK are selected based on the following critical electrical and mechanical parameters:

Primary Compatibility Criteria:

• FET Type: N-Channel topology
• Drain-to-Source Voltage (Vdss): Minimum 100V rating required
• Continuous Drain Current (Id): Minimum 3A at 25°C
• Package Type: SOT-223 surface mount configuration
• Operating Temperature Range: -55°C to 150°C
• Moisture Sensitivity Level: MSL 1 or equivalent

Substitution Logic: Parts meeting or exceeding the CZDM1003N BK specifications in Vdss, Id, and thermal operating range are classified as functional equivalents. Rds On values lower than the original specification indicate improved performance characteristics. Package compatibility (SOT-223) ensures mechanical and thermal interface alignment with existing PCB layouts.

Parameter Comparison

Engineering Selection Recommendations

DMN10H120SE-13 (Diodes Incorporated): This substitute provides direct electrical and package compatibility with the CZDM1003N BK. Both devices share identical Vdss (100V) and equivalent Id ratings (3.6A vs. 3A), with improved Rds On performance (110 mOhm vs. 150 mOhm). The DMN10H120SE-13 is manufactured in an active product status with RoHS3 compliance and REACH unaffected certification. The SOT-223-3 package maintains mechanical compatibility with existing PCB designs. Lower gate charge (10 nC vs. 15 nC) reduces switching losses in high-frequency applications.

IRF7451TRPBF (Infineon Technologies): This substitute offers enhanced voltage rating (150V vs. 100V) and superior Rds On performance (90 mOhm vs. 150 mOhm), providing design margin for voltage transient conditions. Continuous drain current matches the DMN10H120SE-13 at 3.6A. The IRF7451TRPBF is actively manufactured with RoHS3 compliance and REACH unaffected status. However, the 8-SO package differs from the original SOT-223 configuration, requiring PCB layout modification. Higher gate charge (41 nC vs. 15 nC) increases switching energy requirements. This device is suitable for applications where voltage headroom and thermal performance justify package redesign.

Product Status Consideration: Both substitute parts maintain active manufacturing status, ensuring long-term availability and supply chain stability compared to the obsolete CZDM1003N BK. Compliance certifications (RoHS3, REACH) align with current regulatory requirements.

Frequently Asked Questions (FAQ)

Q: Can the DMN10H120SE-13 directly replace the CZDM1003N BK without PCB modification?

A: Yes. The DMN10H120SE-13 is packaged in SOT-223-3, which maintains mechanical and thermal compatibility with the original SOT-223 footprint. Pin configuration and lead spacing are equivalent, allowing direct PCB substitution without layout changes.

Q: What are the electrical advantages of the DMN10H120SE-13 over the original CZDM1003N BK?

A: The DMN10H120SE-13 provides 27% lower on-resistance (110 mOhm vs. 150 mOhm at 10V), reducing conduction losses and heat generation. Gate charge is reduced by 33% (10 nC vs. 15 nC), lowering switching energy in PWM applications. Continuous drain current is increased to 3.6A, providing additional design margin.

Q: Why does the IRF7451TRPBF have a different package (8-SO vs. SOT-223)?

A: The IRF7451TRPBF is manufactured in an 8-SO package to accommodate enhanced thermal performance and additional internal circuitry. This package change requires PCB redesign and is recommended only when the 150V voltage rating and superior Rds On performance justify the layout modification effort.

Q: Is the IRF7451TRPBF suitable for direct replacement in existing designs?

A: The IRF7451TRPBF is not a direct PCB replacement due to package incompatibility. However, it is functionally equivalent in electrical performance and exceeds the CZDM1003N BK specifications. Use this device when redesigning PCB layouts or when enhanced voltage rating is required for improved reliability margins.

Q: What is the impact of higher gate charge in the IRF7451TRPBF?

A: The IRF7451TRPBF gate charge of 41 nC (vs. 15 nC in the original) requires higher gate drive current or longer switching times. In high-frequency switching applications, this increases power dissipation in the gate driver circuit. Verify gate driver capability before selection.

Q: Are both substitute parts RoHS and REACH compliant?

A: Yes. Both the DMN10H120SE-13 and IRF7451TRPBF carry RoHS3 compliance and REACH unaffected certification, meeting current environmental and regulatory requirements for commercial and industrial applications.

Q: What is the thermal performance difference between these devices?

A: The DMN10H120SE-13 has lower power dissipation (1.3W vs. 2W in the original), resulting in reduced junction temperature rise. The IRF7451TRPBF provides higher power dissipation capability (2.5W), supporting higher current or frequency operation with improved thermal headroom.

Q: Can I use either substitute in automotive or high-reliability applications?

A: Both devices maintain the -55°C to 150°C operating temperature range required for automotive and industrial environments. Verify specific application requirements for AEC-Q101 qualification or other industry-specific certifications before final selection.