CTLSH1-50M832DS TR Equivalent & Substitute Parts

Part Overview

The CTLSH1-50M832DS TR is a Schottky diode manufactured by Central Semiconductor Corp, rated for 50 V DC reverse voltage and 1 A average rectified current in an 8-TDFN Exposed Pad surface mount package. This component is classified as obsolete, necessitating identification of active equivalent parts to maintain design continuity and ensure long-term supply chain reliability. Substitute parts must maintain functional compatibility across critical electrical parameters while meeting current manufacturing and quality standards.

Substiute Parts

CTLSH1-50M832DS TR

Central Semiconductor CorpIn Stock: 729CTLSH1-50M832DS TR Datasheet

Current PartRFQ

STPS660DDJFY-TR

STMicroelectronicsIn Stock: 694STPS660DDJFY-TR Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the CTLSH1-50M832DS TR are selected based on the following critical parameters that define functional equivalence:

Primary Substitution Criteria:

• Technology: Schottky diode construction
• Voltage Rating: DC reverse voltage equal to or greater than 50 V
• Current Capacity: Average rectified current equal to or greater than 1 A per diode element
• Speed Characteristic: Fast recovery ≤ 500ns for switching applications
• Mounting: Surface mount configuration
• Reverse Leakage: Current leakage at rated voltage within acceptable operational limits
• Temperature Range: Junction operating temperature range compatible with application requirements

The STPS660DDJFY-TR qualifies as a substitute based on these parameters. Although it is configured as a 2-independent diode array with higher per-diode current rating (3.5 A) and elevated voltage rating (60 V), it maintains the required Schottky technology, fast recovery speed, surface mount form factor, and MSL 1 moisture sensitivity rating. The higher electrical ratings provide design margin and enhanced reliability in the target application.

Parameter Comparison

Engineering Selection Recommendations

STPS660DDJFY-TR as Primary Substitute:

The STPS660DDJFY-TR is suitable for applications requiring replacement of the obsolete CTLSH1-50M832DS TR based on the following engineering factors:

1. Product Status & Supply Chain: The substitute is classified as Active, ensuring long-term availability and manufacturing continuity. The main part is Obsolete, making substitution necessary for ongoing production.

2. Electrical Compatibility: The substitute exceeds the minimum electrical requirements of the main part across all critical parameters. The 60 V reverse voltage rating provides 20% design margin above the 50 V requirement. The 3.5 A per-diode current capacity exceeds the 1 A requirement, offering operational headroom.

3. Functional Equivalence: Both parts employ Schottky technology with identical fast recovery speed characteristics (≤ 500ns). Reverse leakage current in the substitute is lower (150 µA @ 60 V versus 500 µA @ 50 V), indicating improved performance.

4. Quality & Compliance: The substitute carries AEC-Q101 automotive qualification and is REACH compliant, indicating adherence to stringent quality and environmental standards. Both parts maintain MSL 1 moisture sensitivity rating.

5. Package Consideration: The substitute uses 8-PowerVDFN packaging versus the main part's 8-TDFN Exposed Pad. Physical footprint and thermal characteristics differ; PCB layout and thermal management verification is required during integration.

6. Temperature Range: The substitute's operating temperature range (-40°C ~ 175°C) encompasses the main part's range (-65°C ~ 150°C) with extended upper limit, suitable for high-temperature applications.

Frequently Asked Questions (FAQ)

Q: Can the STPS660DDJFY-TR directly replace the CTLSH1-50M832DS TR without circuit modification?

A: Electrical substitution is valid based on parameter compatibility. However, the different package types (8-TDFN Exposed Pad versus 8-PowerVDFN) require PCB layout verification. Thermal performance and mechanical fit must be evaluated for the specific application.

Q: What is the significance of the STPS660DDJFY-TR being a 2-independent diode array versus the single diode configuration of the main part?

A: The substitute contains two independent Schottky diodes in a single package. If only one diode is required, the second diode remains unused. This configuration does not affect substitution validity; the electrical characteristics of each diode element meet or exceed the main part specifications.

Q: How do the forward voltage characteristics compare between the two parts?

A: The main part specifies 550 mV @ 1 A, while the substitute specifies 800 mV @ 6 A. These are measured at different current levels, making direct comparison imprecise. At the 1 A operating point of the main part, the substitute's forward voltage would be lower than 800 mV, typically within acceptable range for most applications.

Q: Is the higher reverse leakage current of the main part (500 µA @ 50 V) a concern when substituting with the lower leakage substitute (150 µA @ 60 V)?

A: No. Lower reverse leakage in the substitute represents improved performance. This reduces power dissipation and heat generation, benefiting overall circuit efficiency and reliability.

Q: What does the AEC-Q101 qualification on the substitute indicate?

A: AEC-Q101 is an automotive industry standard qualification for discrete semiconductors. It certifies that the component meets rigorous reliability, quality, and environmental stress testing requirements. This qualification enhances confidence in long-term performance and supply chain stability.

Q: Are there any temperature range limitations when using the substitute in place of the main part?

A: The substitute's operating range (-40°C ~ 175°C) is wider than the main part (-65°C ~ 150°C). If the application requires operation below -40°C, the substitute may not be suitable. For standard industrial and automotive applications, the substitute's range is adequate.

Q: What PCB layout considerations apply when transitioning from 8-TDFN to 8-PowerVDFN packaging?

A: The PowerVDFN package has different pad dimensions, spacing, and thermal characteristics compared to TDFN. Footprint redesign is necessary. The PowerVDFN package typically offers improved thermal performance due to its design; thermal simulation or testing is recommended to validate performance in the target application.