CTLDM3590 TR N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The CTLDM3590 TR is an N-Channel MOSFET manufactured by Central Semiconductor Corp, rated for 20V drain-to-source voltage with 160mA continuous drain current. This device is classified as obsolete, making identification of functionally equivalent alternatives essential for design continuity and procurement planning. The part is housed in a 3-XFDFN surface mount package and is suitable for low-power switching applications requiring compact form factors.

Substiute Parts

CTLDM3590 TR

Central Semiconductor CorpIn Stock: 10484CTLDM3590 TR Datasheet

Current PartRFQ

NTNS3190NZT5G

onsemiIn Stock: 10502NTNS3190NZT5G Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the CTLDM3590 TR is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Drain-to-Source Voltage (Vdss) must equal or exceed 20V
• Continuous Drain Current (Id) must meet or exceed 160mA at 25°C
• On-Resistance (Rds On) characteristics must support equivalent switching performance
• Gate Threshold Voltage (Vgs(th)) must remain within compatible operating ranges
• Power Dissipation capability must support thermal requirements

Mechanical Compatibility Criteria:

• Surface mount package configuration
• Pin count and footprint compatibility with 3-XFDFN or equivalent package geometry
• Moisture Sensitivity Level (MSL) rating of 1 or better

The NTNS3190NZT5G from onsemi meets these substitution criteria with equivalent voltage ratings, improved current handling, and compatible surface mount packaging.

Parameter Comparison

Engineering Selection Recommendations

The NTNS3190NZT5G qualifies as a direct substitute for the CTLDM3590 TR based on the following engineering criteria:

Voltage and Current Ratings: Both devices are rated for 20V Vdss operation. The NTNS3190NZT5G provides 224mA continuous drain current, exceeding the CTLDM3590 TR specification of 160mA, ensuring adequate current margin for the same application envelope.

On-Resistance Performance: The NTNS3190NZT5G exhibits superior on-resistance characteristics (1.4 Ohm @ 100mA, 4.5V) compared to the CTLDM3590 TR (3 Ohm @ 100mA, 4.5V). This improvement reduces conduction losses and thermal dissipation in switching applications.

Threshold Voltage Compatibility: Both devices maintain identical gate threshold voltage specifications (1V @ 250µA), ensuring compatible gate drive requirements and switching behavior.

Package and Thermal Compatibility: Both devices utilize 3-XFDFN surface mount packaging with MSL 1 rating, confirming mechanical and environmental compatibility. Power dissipation ratings are equivalent (125mW vs. 120mW), supporting identical thermal management approaches.

Regulatory and Compliance Status: Both devices carry REACH Unaffected and EAR99 ECCN classifications, confirming equivalent regulatory standing. The NTNS3190NZT5G carries RoHS3 compliance certification, providing enhanced environmental compliance documentation.

Temperature Operating Range: The CTLDM3590 TR supports -65°C to 150°C operation, while the NTNS3190NZT5G operates from -55°C to 150°C. For applications requiring sub-55°C operation, the CTLDM3590 TR maintains extended low-temperature capability.

Frequently Asked Questions (FAQ)

Q: Can the NTNS3190NZT5G directly replace the CTLDM3590 TR in existing designs?

A: Yes. Both devices share identical voltage ratings (20V Vdss), compatible gate threshold voltages (1V), and identical 3-XFDFN surface mount packaging. The NTNS3190NZT5G provides superior on-resistance and current handling, making it functionally compatible for direct substitution in the same PCB footprint and circuit topology.

Q: What are the key differences between these two MOSFETs?

A: The primary differences are: (1) Continuous drain current: NTNS3190NZT5G provides 224mA versus 160mA for CTLDM3590 TR; (2) On-resistance: NTNS3190NZT5G is 1.4 Ohm versus 3 Ohm, reducing conduction losses; (3) Operating temperature minimum: CTLDM3590 TR extends to -65°C while NTNS3190NZT5G operates from -55°C; (4) Gate charge and input capacitance are slightly higher in the NTNS3190NZT5G, with minimal impact on switching performance in typical applications.

Q: Are there package compatibility concerns?

A: No. Both devices use the 3-XFDFN surface mount package with identical footprint geometry. PCB layout and reflow soldering processes require no modification. Both devices carry MSL 1 (Unlimited) moisture sensitivity ratings, confirming equivalent handling and storage requirements.

Q: What applications are these MOSFETs suitable for?

A: These N-Channel MOSFETs are designed for low-power switching applications including gate drivers, load switches, and signal switching circuits operating at 20V or below. The compact 3-XFDFN package supports space-constrained designs requiring surface mount assembly.

Q: Does the NTNS3190NZT5G provide any performance advantages?

A: Yes. The NTNS3190NZT5G offers lower on-resistance (1.4 Ohm vs. 3 Ohm), reducing conduction losses and heat generation. Higher continuous drain current (224mA vs. 160mA) provides additional design margin. These characteristics make the NTNS3190NZT5G suitable for applications requiring improved efficiency or higher current handling within the same voltage class.

Q: Are there regulatory or compliance differences?

A: Both devices carry identical REACH Unaffected and EAR99 ECCN classifications. The NTNS3190NZT5G includes RoHS3 compliance certification, providing enhanced environmental documentation for regulated supply chains.

Q: What is the impact of the lower operating temperature minimum for the NTNS3190NZT5G?

A: The NTNS3190NZT5G operates from -55°C minimum versus -65°C for the CTLDM3590 TR. For applications requiring operation below -55°C, the CTLDM3590 TR must be retained. For standard industrial and commercial temperature ranges (-40°C to 85°C), this difference has no practical impact.