CSICD10-1200 TR13 Equivalent & Substitute Parts

Part Overview

The CSICD10-1200 TR13 is a Silicon Carbide Schottky diode rated for 1200 V DC reverse voltage and 10 A average rectified current in a Surface Mount DPAK package. Manufactured by Central Semiconductor Corp, this component is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity and ensure supply chain availability for applications requiring 1200 V / 10 A SiC Schottky rectification in TO-252-3 packaging.

Substiute Parts

CSICD10-1200 TR13

Central Semiconductor CorpIn Stock: 1008CSICD10-1200 TR13 Datasheet

Current PartRFQ

SICRD101200

SMC Diode SolutionsIn Stock: 952SICRD101200 Datasheet

MFR RecommendedRFQ

PCDD10120G1_L2_00001

Panjit International Inc.In Stock: 6767PCDD10120G1_L2_00001 Datasheet

Parametric EquivalentRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the CSICD10-1200 TR13 is determined by strict equivalence across the following parameters:

Critical Electrical Parameters (Must Match):

• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 10 A
• Technology: SiC (Silicon Carbide) Schottky
• Reverse Recovery Time (trr): 0 ns

Package & Mounting (Must Match):

• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Mounting Type: Surface Mount

Allowable Parameter Variations:

• Voltage - Forward (Vf) (Max) @ If: ±0.1 V tolerance
• Current - Reverse Leakage @ Vr: Lower values acceptable
• Capacitance @ Vr, F: ±10% variation acceptable
• Operating Temperature - Junction: Equal or wider range acceptable

Both identified substitute parts meet these criteria and are qualified as direct replacements.

Parameter Comparison

Engineering Selection Recommendations

SICRD101200 (SMC Diode Solutions) - MFR Recommended Substitute

The SICRD101200 is the manufacturer-recommended equivalent. It maintains all critical electrical specifications including 1200 V reverse voltage, 10 A current rating, and zero reverse recovery time. The part is in active production status, ensuring long-term supply availability. Forward voltage is 1.8 V at 10 A, representing a 0.1 V increase from the original specification, which remains within acceptable tolerance for SiC Schottky diode applications. Reverse leakage current is improved at 100 µA compared to 250 µA in the original part. RoHS3 compliance and MSL 1 rating match the original specification. This part is suitable for direct replacement in existing designs.

PCDD10120G1_L2_00001 (Panjit International) - Parametric Equivalent

The PCDD10120G1_L2_00001 provides parametric equivalence with identical forward voltage (1.7 V @ 10 A) and improved reverse leakage current (100 µA). This part is in active production status with higher inventory availability (6732 pcs). The capacitance specification is 529 pF at 1V, 1MHz, representing a 5.8% increase from the original 500 pF specification, which is within acceptable variation. RoHS3 compliance and MSL 1 rating are maintained. REACH status is unaffected, providing additional regulatory clarity. This part is suitable for direct replacement in existing designs.

Both substitute parts are qualified for use in applications previously served by the CSICD10-1200 TR13.

Frequently Asked Questions (FAQ)

Q: Can SICRD101200 and PCDD10120G1_L2_00001 be used interchangeably with CSICD10-1200 TR13?

A: Yes. Both parts meet the critical electrical and mechanical specifications required for substitution: 1200 V reverse voltage rating, 10 A current rating, SiC Schottky technology, zero reverse recovery time, and TO-252-3 DPAK packaging. Minor variations in forward voltage (1.8 V vs. 1.7 V for SICRD101200) and reverse leakage current (100 µA vs. 250 µA) are within acceptable engineering tolerances for this component category.

Q: What is the difference between the two substitute parts?

A: SICRD101200 is the manufacturer-recommended equivalent with forward voltage of 1.8 V at 10 A. PCDD10120G1_L2_00001 is a parametric equivalent with forward voltage of 1.7 V at 10 A, matching the original specification exactly. Both parts have improved reverse leakage current (100 µA) compared to the original (250 µA). PCDD10120G1_L2_00001 has higher inventory availability.

Q: Are there package compatibility concerns?

A: No. All three parts use the TO-252-3 DPAK (2 Leads + Tab) SC-63 package. Surface mount footprints and lead configurations are identical, allowing direct PCB placement without modification.

Q: Does the forward voltage difference in SICRD101200 affect circuit performance?

A: The 0.1 V increase in forward voltage (1.8 V vs. 1.7 V at 10 A) for SICRD101200 is within standard SiC Schottky diode manufacturing tolerance and does not require circuit redesign. Power dissipation impact is negligible in most rectification applications.

Q: Are both substitute parts RoHS compliant?

A: Yes. Both SICRD101200 and PCDD10120G1_L2_00001 are ROHS3 compliant, matching the original CSICD10-1200 TR13 specification.

Q: What is the significance of the obsolete status of CSICD10-1200 TR13?

A: The obsolete status indicates that Central Semiconductor Corp has discontinued production of this part. Both substitute parts are in active production status, ensuring continued availability for new designs and replacement applications.

Q: Can these parts be used in high-temperature applications?

A: Yes. All three parts have identical operating temperature ranges of -55°C to 175°C junction temperature, supporting high-temperature rectification applications.