CSIC10-1200 SL Silicon Carbide Schottky Diode Equivalent & Substitute Parts

Part Overview

The CSIC10-1200 SL is a 1200 V, 10 A silicon carbide Schottky diode manufactured by Central Semiconductor Corp in a TO-220-2 through-hole package. This component is classified as obsolete, making equivalent substitute parts necessary for new designs and ongoing production requirements. The part operates across a junction temperature range of -55°C to 175°C and is RoHS3 compliant. Silicon carbide Schottky diodes in this voltage and current class are used in high-efficiency power conversion applications where zero reverse recovery time and low forward voltage drop are critical performance factors.

Substiute Parts

CSIC10-1200 SL
Central Semiconductor CorpIn Stock: 913CSIC10-1200 SL Datasheet
CSIC10-1200 SL
Current Part
IDH10G120C5XKSA1
Infineon TechnologiesIn Stock: 52565IDH10G120C5XKSA1 Datasheet
IDH10G120C5XKSA1
MFR Recommended
SICR101200
SMC Diode SolutionsIn Stock: 786SICR101200 Datasheet
SICR101200
MFR Recommended
S4D10120A
SMC Diode SolutionsIn Stock: 2228S4D10120A Datasheet
S4D10120A
Parametric Equivalent
S4D10120H
SMC Diode SolutionsIn Stock: 1578S4D10120H Datasheet
S4D10120H
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 10 A
Voltage - Forward (Vf) (Max) @ If 1.8 @ 10 A V
Reverse Recovery Time (trr) 0 ns
Operating Temperature - Junction -55 to 175 °C
Mounting Type Through Hole -
Package / Case TO-220-2 -
Technology SiC (Silicon Carbide) Schottky -
RoHS Status ROHS3 Compliant -

Substitute Part Grouping Explanation

Substitution of the CSIC10-1200 SL is determined by strict electrical and mechanical parameter matching within the silicon carbide Schottky diode category. The following parameters establish substitution eligibility:

Critical Matching Parameters:

  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 10 A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
  • Reverse Recovery Time (trr): 0 ns
  • Operating Temperature - Junction: -55°C to 175°C
  • Technology: SiC (Silicon Carbide) Schottky
  • Mounting Type: Through Hole

Package Considerations: Substitute parts are grouped into two categories based on package compatibility:

  1. TO-220-2 Package Direct Substitutes (IDH10G120C5XKSA1, SICR101200, S4D10120A): These parts maintain the original TO-220-2 footprint and are pin-compatible with the CSIC10-1200 SL.

  2. TO-247-2 Package Equivalent (S4D10120H): This part meets all electrical parameters but uses a TO-247-2 package, requiring PCB layout modification for mechanical compatibility.

All substitute parts listed maintain identical electrical specifications for voltage rating, current capacity, forward voltage drop, and zero reverse recovery time characteristics.

Parameter Comparison

Parameter CSIC10-1200 SL IDH10G120C5XKSA1 SICR101200 S4D10120A S4D10120H
Manufacturer Central Semiconductor Corp Infineon Technologies SMC Diode Solutions SMC Diode Solutions SMC Diode Solutions
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 1200 V 1200 V 1200 V
Current - Average Rectified (Io) 10 A 10 A 10 A 10 A 10 A
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 10 A 1.8 V @ 10 A 1.8 V @ 10 A 1.8 V @ 10 A 1.8 V @ 10 A
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 400 µA @ 1200 V 62 µA @ 1200 V 100 µA @ 1200 V 30 µA @ 1200 V 30 µA @ 1200 V
Operating Temperature - Junction -55 to 175°C -55 to 175°C -55 to 175°C -55 to 175°C -55 to 175°C
Package / Case TO-220-2 TO-220-2 TO-220-2 TO-220-2 TO-247-2
Product Status Obsolete Active Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

Primary Substitute - IDH10G120C5XKSA1 (Infineon Technologies): This part is the manufacturer-recommended substitute with active product status. It maintains TO-220-2 package compatibility and meets all electrical specifications. The CoolSiC™+ series designation indicates current-generation technology. Reverse leakage current of 62 µA at 1200 V is lower than the original part, representing improved performance characteristics. This part is suitable for direct replacement in existing designs without PCB modification.

Secondary Substitute - SICR101200 (SMC Diode Solutions): This part meets all critical electrical parameters and maintains TO-220-2 package compatibility. Product status is active with 750 units in stock. Reverse leakage current of 100 µA at 1200 V is within acceptable range. REACH status is affected, requiring compliance verification for specific applications.

Tertiary Substitute - S4D10120A (SMC Diode Solutions): This parametric equivalent meets all electrical specifications with TO-220-2 package compatibility. Reverse leakage current of 30 µA at 1200 V represents superior performance. Product status is active with 2200 units in stock. REACH status is affected.

Alternative Substitute - S4D10120H (SMC Diode Solutions): This part meets all electrical specifications but uses TO-247-2 package instead of TO-220-2. Selection of this part requires PCB layout modification to accommodate the different package footprint. Reverse leakage current of 30 µA at 1200 V matches S4D10120A performance. Product status is active with 1520 units in stock.

All substitute parts are RoHS3 compliant with MSL rating of 1 (Unlimited), matching the original part's environmental compliance profile.

Frequently Asked Questions (FAQ)

Q: Can IDH10G120C5XKSA1 be used as a direct replacement for CSIC10-1200 SL without PCB modification?

A: Yes. IDH10G120C5XKSA1 maintains the TO-220-2 package footprint and pin configuration. All electrical parameters match the original specification. No PCB layout changes are required for mechanical or electrical compatibility.

Q: What is the difference between S4D10120A and S4D10120H?

A: Both parts are electrically identical with 1200 V reverse voltage rating, 10 A current capacity, and 1.8 V forward voltage drop. The difference is package type: S4D10120A uses TO-220-2 (compatible with CSIC10-1200 SL footprint), while S4D10120H uses TO-247-2 (larger package requiring PCB modification).

Q: Why does IDH10G120C5XKSA1 have lower reverse leakage current (62 µA) compared to CSIC10-1200 SL (400 µA)?

A: Reverse leakage current variation within the same voltage and current rating is a normal characteristic difference between manufacturers and product generations. Lower leakage current in IDH10G120C5XKSA1 represents improved performance and does not affect substitution compatibility.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts carry RoHS3 compliance certification, matching the original CSIC10-1200 SL environmental standard.

Q: What is the significance of REACH status being "affected" for SICR101200, S4D10120A, and S4D10120H?

A: REACH status "affected" indicates the part is subject to REACH regulation requirements. This does not prevent use but requires compliance verification based on specific application and regional requirements. IDH10G120C5XKSA1 shows REACH status as "unaffected," indicating no additional REACH compliance obligations.

Q: Can S4D10120H be used in applications where TO-220-2 package is specified?

A: No. S4D10120H uses TO-247-2 package with different mechanical dimensions and pin spacing. While electrically equivalent, it requires PCB redesign for mechanical compatibility and cannot be used in existing TO-220-2 footprints.

Q: What inventory availability should be considered for production planning?

A: IDH10G120C5XKSA1 has 52,488 units in stock (highest availability), S4D10120A has 2,200 units, S4D10120H has 1,520 units, and SICR101200 has 750 units. Inventory levels should be evaluated against production volume and lead time requirements.

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