CSIC10-1200 Silicon Carbide Schottky Diode Equivalent & Substitute Parts

Part Overview

The CSIC10-1200 is a 1200 V, 10 A silicon carbide Schottky diode manufactured by Central Semiconductor Corp in a through-hole TO-220-2 package. This component is classified as obsolete, necessitating identification of active equivalent and substitute parts for ongoing design requirements and procurement needs. The diode is designed for high-voltage rectification applications with zero reverse recovery time characteristic of SiC Schottky technology.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	1200	V
Current - Average Rectified (Io)	10	A
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 10 A	V
Reverse Recovery Time (trr)	0	ns
Technology	SiC (Silicon Carbide) Schottky	—
Mounting Type	Through Hole	—
Package / Case	TO-220-2	—
Operating Temperature - Junction	-55 to 175	°C
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the CSIC10-1200 is determined by strict equivalence in the following electrical and mechanical parameters:

Critical Matching Parameters:

Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 10 A
Technology: SiC (Silicon Carbide) Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Operating Temperature Range: -55°C to 175°C

Acceptable Variation Parameters:

Voltage - Forward (Vf) (Max) @ If: Maximum 1.8 V @ 10 A (main part: 1.7 V)
Current - Reverse Leakage @ Vr: Variation permitted within manufacturer specifications
Capacitance @ Vr, F: Variation permitted within manufacturer specifications

All substitute parts listed maintain identical voltage and current ratings, silicon carbide Schottky technology, through-hole mounting, and TO-220-2 package compatibility. Substitute parts are classified as either MFR Recommended (manufacturer-endorsed alternatives) or Parametric Equivalent (electrically equivalent with minor specification variations).

Parameter Comparison

Parameter	CSIC10-1200 (Central Semiconductor)	IDH10G120C5XKSA1 (Infineon)	SICR101200 (SMC Diode)	DSC10120 (Diodes Inc.)	PCDP10120G1_T0_00001 (Panjit)
Voltage - DC Reverse (Vr) (Max)	1200 V	1200 V	1200 V	1200 V	1200 V
Current - Average Rectified (Io)	10 A	10 A	10 A	10 A	10 A
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 10 A	1.8 V @ 10 A	1.8 V @ 10 A	1.7 V @ 10 A	1.7 V @ 10 A
Reverse Recovery Time (trr)	0 ns	0 ns	0 ns	0 ns	0 ns
Technology	SiC Schottky	SiC Schottky	SiC Schottky	SiC Schottky	SiC Schottky
Current - Reverse Leakage @ Vr	250 µA @ 1200 V	62 µA @ 1200 V	100 µA @ 1200 V	640 µA @ 1200 V	100 µA @ 1200 V
Capacitance @ Vr, F	500 pF @ 1V, 1MHz	525 pF @ 1V, 1MHz	640 pF @ 0V, 1MHz	611 pF @ 100mV, 1MHz	529 pF @ 1V, 1MHz
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-2	TO-220-2	TO-220-2	TO-220-2	TO-220-2
Operating Temperature - Junction	-55 to 175°C	-55 to 175°C	-55 to 175°C	-55 to 175°C	-55 to 175°C
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: IDH10G120C5XKSA1 (Infineon Technologies)

The IDH10G120C5XKSA1 is classified as MFR Recommended and represents the preferred substitute for the obsolete CSIC10-1200. This part maintains active product status with 52,488 units in stock. It meets all critical electrical parameters: 1200 V reverse voltage, 10 A average rectified current, and SiC Schottky technology. The forward voltage specification of 1.8 V @ 10 A is within acceptable tolerance relative to the original 1.7 V specification. The reverse leakage current of 62 µA @ 1200 V is superior to the original specification. The part is ROHS3 compliant and carries REACH Unaffected status, ensuring regulatory compliance for new designs.

Secondary Recommendation: SICR101200 (SMC Diode Solutions)

The SICR101200 is classified as MFR Recommended with active product status and 750 units in stock. This part satisfies all critical electrical and mechanical parameters with identical 1200 V / 10 A ratings and SiC Schottky technology. Forward voltage is specified at 1.8 V @ 10 A. The reverse leakage current of 100 µA @ 1200 V is acceptable. ROHS3 compliance is confirmed; however, REACH Status is listed as Affected, requiring evaluation for applications subject to REACH regulations.

Tertiary Recommendations: DSC10120 (Diodes Incorporated) and PCDP10120G1_T0_00001 (Panjit International Inc.)

Both DSC10120 and PCDP10120G1_T0_00001 are classified as Parametric Equivalent with active product status. DSC10120 offers 886 units in stock with forward voltage matching the original specification at 1.7 V @ 10 A; however, reverse leakage current is elevated at 640 µA @ 1200 V. PCDP10120G1_T0_00001 provides 2,932 units in stock with forward voltage at 1.7 V @ 10 A and reverse leakage at 100 µA @ 1200 V. Both parts are ROHS3 compliant and REACH Unaffected.

Selection Criteria Summary:

For new designs with regulatory compliance priority: IDH10G120C5XKSA1
For applications requiring lowest reverse leakage: IDH10G120C5XKSA1
For high-volume procurement: PCDP10120G1_T0_00001 (2,932 units available)
For REACH-sensitive applications: IDH10G120C5XKSA1 or PCDP10120G1_T0_00001

Frequently Asked Questions (FAQ)

Q: Can the IDH10G120C5XKSA1 be used as a direct replacement for CSIC10-1200 in existing PCB designs?

A: Yes. The IDH10G120C5XKSA1 maintains identical TO-220-2 package geometry, through-hole mounting configuration, and electrical ratings (1200 V / 10 A). The forward voltage specification of 1.8 V @ 10 A is within acceptable tolerance for SiC Schottky diodes. No PCB layout modifications are required.

Q: What is the difference between MFR Recommended and Parametric Equivalent classifications?

A: MFR Recommended substitutes are endorsed by the original component manufacturer or represent direct manufacturer alternatives with validated compatibility. Parametric Equivalent parts meet all critical electrical and mechanical specifications but may exhibit minor variations in secondary parameters such as reverse leakage current or capacitance. Both classifications are suitable for substitution when electrical parameters fall within acceptable design tolerances.

Q: Why does DSC10120 show higher reverse leakage current (640 µA) compared to other substitutes?

A: Reverse leakage current variation is a normal characteristic of silicon carbide Schottky diodes and falls within manufacturer specification ranges. The DSC10120 specification of 640 µA @ 1200 V remains within acceptable limits for most rectification applications. Design evaluation should confirm that this leakage current does not exceed circuit requirements for standby power consumption or thermal dissipation.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All listed substitute parts—IDH10G120C5XKSA1, SICR101200, DSC10120, and PCDP10120G1_T0_00001—are ROHS3 compliant, meeting restrictions on hazardous substances for electronic equipment.

Q: What is the significance of REACH Status in part selection?

A: REACH Status indicates compliance with European Union chemical regulations. IDH10G120C5XKSA1, DSC10120, and PCDP10120G1_T0_00001 are listed as REACH Unaffected, indicating no REACH-regulated substances of concern. SICR101200 is listed as REACH Affected, requiring additional evaluation for applications subject to REACH regulations or European market distribution.

Q: Can substitute parts be mixed in the same design or production batch?

A: All substitute parts maintain identical electrical ratings and package specifications, permitting use in the same circuit design. However, production consistency and supply chain management typically favor single-source selection. If multiple suppliers are used, ensure that reverse leakage current and forward voltage specifications are evaluated within circuit tolerance margins.

Q: What is the operating temperature range for all substitute parts?

A: All substitute parts maintain the same operating temperature range as the original CSIC10-1200: -55°C to 175°C junction temperature. This range is suitable for industrial and automotive applications requiring extended temperature operation.

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