CSD25303W1015 Equivalent & Substitute Parts

Part Overview

The CSD25303W1015 is a P-Channel MOSFET manufactured by Texas Instruments, part of the NexFET™ series. This device is rated for 20V drain-to-source voltage with 3A continuous drain current in a compact 6-DSBGA (1x1.5mm) surface mount package. The part is currently classified as obsolete, which necessitates identification of active equivalent alternatives for ongoing design support and procurement.

Substiute Parts

CSD25303W1015
Texas InstrumentsIn Stock: 6284CSD25303W1015 Datasheet
CSD25303W1015
Current Part
CSD25304W1015
Texas InstrumentsIn Stock: 55391CSD25304W1015 Datasheet
CSD25304W1015
Direct

Key Parameters

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3 A
Rds On (Max) @ 1.5A, 4.5V 58 mOhm
Vgs(th) (Max) @ 250µA 1 V
Gate Charge (Qg) (Max) @ 4.5V 4.3 nC
Input Capacitance (Ciss) (Max) @ 10V 435 pF
Power Dissipation (Max) 1.5 W
Operating Temperature Range -55 to 150 °C
Package Type 6-DSBGA (1x1.5)
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitution of the CSD25303W1015 is determined by strict equivalence across the following electrical and mechanical parameters:

Electrical Equivalence Criteria:

  • FET Type: P-Channel topology must be maintained
  • Drain to Source Voltage (Vdss): 20V rating required
  • Continuous Drain Current (Id): 3A minimum at 25°C
  • Gate Charge (Qg): Comparable switching characteristics
  • Input Capacitance (Ciss): Similar gate drive requirements
  • Vgs(th): Threshold voltage within specified range
  • Operating Temperature: -55°C to 150°C range

Mechanical Equivalence Criteria:

  • Package: 6-DSBGA (1x1.5mm) form factor
  • Mounting: Surface mount technology
  • Pin configuration: Identical pinout

The CSD25304W1015 meets all substitution criteria as an active product within the same NexFET™ series, sharing identical voltage and current ratings, package geometry, and thermal operating range.

Parameter Comparison

Parameter CSD25303W1015 CSD25304W1015 Unit
Manufacturer Texas Instruments Texas Instruments
Series NexFET™ NexFET™
Product Status Obsolete Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 20 V
Current - Continuous Drain (Id) @ 25°C 3 3 A
Rds On (Max) @ 1.5A, 4.5V 58 32.5 mOhm
Vgs(th) (Max) @ 250µA 1 1.15 V
Gate Charge (Qg) (Max) @ 4.5V 4.3 4.4 nC
Input Capacitance (Ciss) (Max) @ 10V 435 595 pF
Power Dissipation (Max) 1.5 0.75 W
Operating Temperature Range -55 to 150 -55 to 150 °C
Package Type 6-DSBGA (1x1.5) 6-DSBGA (1x1.5)
Mounting Type Surface Mount Surface Mount
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

CSD25304W1015 as Primary Substitute:

The CSD25304W1015 is the direct active equivalent for the obsolete CSD25303W1015. Both devices share identical electrical ratings (20V Vdss, 3A Id), package geometry (6-DSBGA 1x1.5mm), and thermal operating range (-55°C to 150°C). The CSD25304W1015 carries active product status with full manufacturing support and availability (55,300 units in stock versus 6,200 for the obsolete part).

Compliance and Certification:

Both parts maintain ROHS3 compliance, REACH unaffected status, and MSL Level 1 (unlimited moisture sensitivity). The CSD25304W1015 is suitable for direct replacement in existing designs without redesign or re-qualification requirements.

Performance Considerations:

The CSD25304W1015 exhibits improved on-resistance (32.5 mOhm versus 58 mOhm at 1.5A, 4.5V) and reduced power dissipation (750 mW versus 1.5W), resulting in lower thermal load and improved efficiency. These improvements are beneficial for thermal management and power budget optimization.

Frequently Asked Questions (FAQ)

Q: Can the CSD25304W1015 be used as a direct drop-in replacement for the CSD25303W1015?

A: Yes. Both devices share identical Vdss (20V), Id (3A), package (6-DSBGA 1x1.5mm), pinout, and operating temperature range (-55°C to 150°C). No circuit modifications are required for substitution.

Q: What are the key differences between these two parts?

A: The primary differences are product status (CSD25304W1015 is active; CSD25303W1015 is obsolete) and electrical performance. The CSD25304W1015 has lower on-resistance (32.5 mOhm versus 58 mOhm) and reduced power dissipation (750 mW versus 1.5W), both favorable characteristics for thermal and efficiency performance.

Q: Are there any package or pinout differences?

A: No. Both parts use the 6-DSBGA (1x1.5mm) surface mount package with identical pinout and mechanical dimensions.

Q: What is the impact of the higher input capacitance (Ciss) in the CSD25304W1015?

A: The CSD25304W1015 has higher input capacitance (595 pF versus 435 pF at 10V). This requires slightly higher gate drive charge but remains within acceptable limits for standard gate driver circuits. Gate charge (Qg) is nearly identical (4.4 nC versus 4.3 nC), indicating comparable switching performance.

Q: Are both parts RoHS and REACH compliant?

A: Yes. Both the CSD25303W1015 and CSD25304W1015 are ROHS3 compliant and REACH unaffected, meeting environmental and regulatory requirements for industrial and commercial applications.

Q: What is the availability status of these parts?

A: The CSD25303W1015 is obsolete with limited remaining inventory (6,200 units). The CSD25304W1015 is active with substantial availability (55,300 units in stock), ensuring long-term procurement reliability.

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