CSD25302Q2 Equivalent & Substitute Parts

Part Overview

The CSD25302Q2 is a P-Channel MOSFET manufactured by Texas Instruments, part of the NexFET™ series. This device is rated for 20V drain-to-source voltage with a continuous drain current of 5A at 25°C, housed in a 6-SON surface mount package. The component is classified as Obsolete, making identification of suitable substitute parts essential for ongoing design support and production continuity. The CSD25302Q2 remains available in inventory (83,300 pcs), but obsolescence status necessitates evaluation of active alternative components that maintain electrical and mechanical compatibility.

Substiute Parts

CSD25302Q2

Texas InstrumentsIn Stock: 83316CSD25302Q2 Datasheet

Current PartRFQ

CSD25310Q2

Texas InstrumentsIn Stock: 80473CSD25310Q2 Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the CSD25302Q2 is determined by strict adherence to the following electrical and mechanical parameters:

Mandatory Matching Criteria:

• Drain to Source Voltage (Vdss): 20V minimum
• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Gate Voltage Range (Vgs): ±8V
• Operating Temperature Range: -55°C to 150°C minimum
• Mounting Type: Surface Mount
• RoHS3 Compliance and REACH Unaffected status

Allowable Variation Parameters:

• Continuous Drain Current (Id): Equal to or greater than 5A
• Rds On (Max): Equal to or lower (better performance)
• Gate Charge (Qg): Equal to or lower
• Input Capacitance (Ciss): Equal to or lower
• Power Dissipation: Equal to or greater
• Package form factor: 6-SON or 6-WSON variants acceptable

The CSD25310Q2 qualifies as a direct substitute based on these criteria. It maintains identical voltage ratings, temperature range, and gate voltage specifications while offering superior current handling (20A vs. 5A), lower on-resistance (23.9mOhm vs. 49mOhm), and improved thermal performance. Package transition from 6-SON to 6-WSON (2x2) represents a mechanical upgrade with enhanced thermal dissipation capability.

Parameter Comparison

Engineering Selection Recommendations

CSD25310Q2 as Primary Substitute:

The CSD25310Q2 is the qualified substitute for the obsolete CSD25302Q2. Both components are manufactured by Texas Instruments within the NexFET™ series and maintain full compliance with ROHS3 and REACH requirements. The CSD25310Q2 holds Active product status, ensuring long-term availability and supply chain stability.

Electrical Compatibility: The CSD25310Q2 maintains identical voltage ratings (20V Vdss) and operating temperature range (-55°C to 150°C). Gate voltage specifications (±8V) are identical. The substitute device provides superior electrical performance with 4× higher continuous drain current capacity (20A vs. 5A) and lower on-resistance (23.9mOhm vs. 49mOhm at comparable conditions), resulting in reduced power dissipation in typical applications.

Mechanical Compatibility: Package transition from 6-SON to 6-WSON (2x2) represents a footprint change. The 6-WSON variant includes an exposed pad for enhanced thermal management. PCB layout modification is required; however, the pin configuration remains compatible with P-Channel MOSFET applications. The wider package body (2x2mm vs. standard SON dimensions) provides improved thermal performance.

Compliance Status: Both components satisfy ROHS3 Compliance and REACH Unaffected requirements. Moisture Sensitivity Level (MSL) is identical at Level 1 (Unlimited). ECCN and HTSUS classifications are unchanged.

Frequently Asked Questions (FAQ)

Q: Can the CSD25310Q2 directly replace the CSD25302Q2 without circuit modification?

A: Electrical substitution is direct. Pin configuration for P-Channel MOSFET operation is maintained. PCB layout modification is required due to package form factor change from 6-SON to 6-WSON (2x2). Thermal pad connection design may require adjustment to utilize the exposed pad feature of the 6-WSON package.

Q: What are the key electrical differences between these two parts?

A: The CSD25310Q2 provides higher continuous drain current (20A vs. 5A), lower on-resistance (23.9mOhm vs. 49mOhm), and higher gate charge (4.7nC vs. 3.4nC). Input capacitance is higher (655pF vs. 350pF). Drain-to-source voltage, gate voltage range, and operating temperature specifications are identical.

Q: Is the CSD25310Q2 suitable for applications requiring the exact 5A current rating of the CSD25302Q2?

A: Yes. The CSD25310Q2 is rated for 20A continuous drain current, which exceeds the 5A requirement. The device operates within specification at lower current levels. The lower on-resistance provides improved efficiency at the 5A operating point.

Q: What is the impact of the package change from 6-SON to 6-WSON?

A: The 6-WSON (2x2) package includes an exposed thermal pad, improving heat dissipation compared to the standard 6-SON package. This requires PCB layout modification to incorporate the thermal pad connection. The footprint dimensions differ; existing PCB designs require layout revision.

Q: Are there any compliance or regulatory differences between the two parts?

A: No. Both components maintain identical ROHS3 Compliance, REACH Unaffected status, and Moisture Sensitivity Level (MSL 1). ECCN and HTSUS classifications are unchanged.

Q: Why is the CSD25302Q2 classified as Obsolete?

A: Product status reflects Texas Instruments' lifecycle management. The CSD25310Q2 represents the active successor within the NexFET™ series, offering improved performance and thermal characteristics. Existing inventory of the CSD25302Q2 remains available; however, new designs should incorporate the CSD25310Q2 for long-term supply assurance.

Q: What is the gate charge difference, and does it affect circuit design?

A: Gate charge increases from 3.4nC to 4.7nC. This represents approximately 38% higher charge requirement. Gate driver circuits must supply adequate charge capacity; however, this difference is typically accommodated by standard gate driver designs without circuit modification.