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CSD19505KTT N-Channel 80V 200A MOSFET Equivalent & Substitute Parts
Part Overview
The CSD19505KTT is an N-Channel MOSFET manufactured by Texas Instruments, part of the NexFET™ series. This device is rated for 80V drain-to-source voltage with 200A continuous drain current and 300W maximum power dissipation in a Surface Mount TO-263 (DDPAK-3) package. The part is currently Active in product status and maintains full RoHS3 compliance with REACH applicability. Equivalent and substitute parts are identified to support procurement flexibility, inventory management, and supply chain continuity for applications requiring identical electrical and mechanical specifications.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 80 | V |
| Continuous Drain Current (Id) @ 25°C | 200 | A (Ta) |
| Rds On (Max) @ 100A, 10V | 3.1 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 3.2 | V |
| Gate Charge (Qg) @ 10V | 76 | nC |
| Input Capacitance (Ciss) @ 40V | 7920 | pF |
| Power Dissipation (Max) | 300 | W (Tc) |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Package Type | TO-263 (DDPAK-3) | Surface Mount |
| Gate Voltage (Max) | ±20 | V |
Substitute Part Grouping Explanation
Substitution of the CSD19505KTT is determined by strict equivalence across all critical electrical and mechanical parameters. The substitute part CSD19505KTTT maintains identical specifications in the following key areas:
Electrical Parameters (Must Match Exactly):
- Drain to Source Voltage (Vdss): 80V
- Continuous Drain Current (Id) @ 25°C: 200A
- On-State Resistance (Rds On) @ 100A, 10V: 3.1 mOhm
- Gate Threshold Voltage (Vgs(th)): 3.2V @ 250µA
- Gate Charge (Qg): 76 nC @ 10V
- Input Capacitance (Ciss): 7920 pF @ 40V
- Power Dissipation: 300W (Tc)
- Operating Temperature: -55°C to 175°C
Mechanical Parameters (Must Match Exactly):
- Package Type: TO-263 (DDPAK-3)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Compliance & Status (Must Match Exactly):
- Manufacturer: Texas Instruments
- Series: NexFET™
- Product Status: Active
- RoHS Status: ROHS3 Compliant
- Moisture Sensitivity Level: 2 (1 Year)
- REACH Status: REACH Affected
Parameter Comparison
| Parameter | CSD19505KTT | CSD19505KTTT | Match |
|---|---|---|---|
| Manufacturer | Texas Instruments | Texas Instruments | Yes |
| Series | NexFET™ | NexFET™ | Yes |
| FET Type | N-Channel | N-Channel | Yes |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Yes |
| Vdss | 80V | 80V | Yes |
| Id @ 25°C | 200A (Ta) | 200A (Ta) | Yes |
| Rds On (Max) @ 100A, 10V | 3.1 mOhm | 3.1 mOhm | Yes |
| Vgs(th) @ 250µA | 3.2V | 3.2V | Yes |
| Gate Charge (Qg) @ 10V | 76 nC | 76 nC | Yes |
| Ciss @ 40V | 7920 pF | 7920 pF | Yes |
| Vgs (Max) | ±20V | ±20V | Yes |
| Power Dissipation (Max) | 300W (Tc) | 300W (Tc) | Yes |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | Yes |
| Package Type | TO-263 (DDPAK-3) | TO-263 (DDPAK-3) | Yes |
| Mounting Type | Surface Mount | Surface Mount | Yes |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | Yes |
| MSL | 2 (1 Year) | 2 (1 Year) | Yes |
| REACH Status | REACH Affected | REACH Affected | Yes |
| Product Status | Active | Active | Yes |
Engineering Selection Recommendations
The CSD19505KTTT is a direct parametric equivalent to the CSD19505KTT. Both parts are manufactured by Texas Instruments, share identical electrical specifications, and are housed in the same TO-263 (DDPAK-3) Surface Mount package. Both parts maintain Active product status and full compliance with RoHS3 and REACH regulations.
Selection between CSD19505KTT and CSD19505KTTT is based on availability and procurement requirements. Both parts are suitable for identical circuit applications without modification to PCB layout, thermal management, or gate drive circuitry. The parts are interchangeable at the component level.
Current inventory status: CSD19505KTT (2230 Pcs), CSD19505KTTT (1344 Pcs).
Frequently Asked Questions (FAQ)
Q: Can CSD19505KTTT be used as a direct replacement for CSD19505KTT?
A: Yes. The CSD19505KTTT is a parametric equivalent with identical electrical and mechanical specifications. No circuit modifications are required.
Q: Are there any differences in package dimensions or pin configuration?
A: No. Both parts use the TO-263 (DDPAK-3) Surface Mount package with identical pin configuration and mechanical dimensions.
Q: Do both parts have the same thermal characteristics?
A: Yes. Both parts have identical maximum power dissipation (300W at Tc) and operating temperature range (-55°C to 175°C).
Q: Are compliance certifications identical?
A: Yes. Both parts are ROHS3 Compliant, REACH Affected, with MSL rating of 2 (1 Year).
Q: What is the difference between the part numbers CSD19505KTT and CSD19505KTTT?
A: The part numbers differ only in the suffix designation (KTT vs KTTT). Both are manufactured by Texas Instruments and share identical electrical and mechanical specifications. The suffix variation reflects different packaging or distribution configurations from the manufacturer.
Q: Can these parts be used in high-frequency switching applications?
A: Both parts have identical gate charge (76 nC @ 10V) and input capacitance (7920 pF @ 40V) specifications, making them suitable for applications within the specified electrical parameters.
Q: What is the on-state resistance at different current levels?
A: The specified Rds On (Max) is 3.1 mOhm @ 100A, 10V for both parts. This is the maximum guaranteed value at the specified conditions.
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