CSD17581Q5A N-Channel 30V MOSFET Equivalent & Substitute Parts

Part Overview

The CSD17581Q5A is an N-Channel MOSFET manufactured by Texas Instruments, part of the NexFET™ series. This device operates at 30V drain-to-source voltage with continuous drain current ratings of 24A at ambient temperature (Ta) and 123A at case temperature (Tc). The component is housed in an 8-VSONP (5x6) surface mount package and is classified as Active product status with full RoHS3 compliance. Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be maintained within the specified parameter ranges for this MOSFET category.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Ta)	24	A
Continuous Drain Current @ 25°C (Tc)	123	A
Rds On (Max) @ Id, Vgs	3.4 mOhm @ 16A, 10V	mOhm
Gate Threshold Voltage Vgs(th) (Max)	1.7	V @ 250µA
Gate Charge (Qg) (Max)	54	nC @ 10V
Input Capacitance (Ciss) (Max)	3640	pF @ 15V
Power Dissipation (Max) (Ta)	3.1	W
Power Dissipation (Max) (Tc)	83	W
Operating Temperature Range	-55 to 155	°C (TJ)
Mounting Type	Surface Mount
Package	8-VSONP (5x6)
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level	1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the CSD17581Q5A are identified based on the following electrical and mechanical criteria:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): 30V minimum
Continuous Drain Current (Id @ Ta): 24A minimum at ambient temperature
On-Resistance (Rds On): Within acceptable range for switching applications
Gate Threshold Voltage (Vgs(th)): Compatible drive voltage requirements
Operating Temperature Range: Support for -55°C to 150°C minimum
Surface Mount Technology: 8-pin power package configurations
Compliance: RoHS3 and REACH requirements

Substitution Logic: The CSD17581Q5A operates as an N-Channel enhancement-mode MOSFET with 30V rating. Substitute parts must maintain the 30V Vdss specification and support minimum 24A continuous drain current at ambient temperature. On-resistance characteristics must be comparable to enable equivalent switching performance. Gate charge and input capacitance parameters influence switching speed and drive requirements; substitutes with similar or lower values maintain circuit performance. All substitute parts must be Active status with identical compliance certifications.

Parameter Comparison

Parameter	CSD17581Q5A (TI)	RS1E240GNTB (Rohm)	BSZ035N03MSGATMA1 (Infineon)
Manufacturer	Texas Instruments	Rohm Semiconductor	Infineon Technologies
Vdss (V)	30	30	30
Id @ Ta (A)	24	24	18
Id @ Tc (A)	123	72	40
Rds On (Max) @ Vgs 10V (mOhm)	3.4 @ 16A	3.3 @ 24A	3.5 @ 20A
Vgs(th) (Max) (V)	1.7 @ 250µA	2.5 @ 1mA	2.0 @ 250µA
Gate Charge Qg (Max) (nC)	54 @ 10V	23 @ 10V	74 @ 10V
Ciss (Max) (pF)	3640 @ 15V	1500 @ 15V	5700 @ 15V
Power Dissipation (Ta) (W)	3.1	3.0	2.1
Power Dissipation (Tc) (W)	83	27	69
Operating Temperature (°C)	-55 to 155	to 150	-55 to 150
Package	8-VSONP (5x6)	8-HSOP	PG-TSDSON-8
Product Status	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

CSD17581Q5A (Texas Instruments NexFET™ Series) Primary selection for applications requiring maximum continuous drain current at case temperature (123A Tc). Supports extended operating temperature range to 155°C. Optimal for high-power switching applications with thermal management capability. All compliance certifications current and active.

RS1E240GNTB (Rohm Semiconductor) Direct electrical equivalent at ambient temperature rating (24A Ta). Lower gate charge (23 nC) reduces drive circuit complexity. Reduced power dissipation at case temperature (27W Tc) suitable for moderate thermal environments. Identical Vdss and comparable Rds On characteristics. Active product status with full RoHS3 compliance. Package form factor differs (8-HSOP vs. 8-VSONP).

BSZ035N03MSGATMA1 (Infineon OptiMOS™ Series) Suitable for applications where 18A continuous drain current at ambient temperature meets design requirements. Lower ambient temperature power dissipation (2.1W Ta) for thermally constrained designs. Higher gate charge (74 nC) and input capacitance (5700 pF) require consideration in drive circuit design. Operating temperature range -55°C to 150°C. Active product status with full RoHS3 compliance. Package form factor differs (PG-TSDSON-8 vs. 8-VSONP).

All substitute parts maintain 30V Vdss specification, RoHS3 compliance, MSL Level 1, and Active product status. Selection depends on specific application requirements for continuous current rating, thermal dissipation, and package compatibility.

Frequently Asked Questions (FAQ)

Q: Can RS1E240GNTB directly replace CSD17581Q5A in all applications? A: RS1E240GNTB maintains identical 30V Vdss and 24A continuous drain current at ambient temperature. Rds On characteristics are comparable (3.3 mOhm vs. 3.4 mOhm). Primary consideration is package form factor: RS1E240GNTB uses 8-HSOP while CSD17581Q5A uses 8-VSONP (5x6). PCB layout and thermal management may differ due to package geometry. Verify thermal performance requirements for your specific application.

Q: What are the key differences between CSD17581Q5A and BSZ035N03MSGATMA1? A: BSZ035N03MSGATMA1 has lower continuous drain current at ambient temperature (18A vs. 24A). Gate charge is higher (74 nC vs. 54 nC), affecting switching speed and drive requirements. Input capacitance is significantly higher (5700 pF vs. 3640 pF). Operating temperature maximum is 150°C versus 155°C. Use BSZ035N03MSGATMA1 only when 18A continuous current rating is sufficient for your design.

Q: Are all three parts pin-compatible? A: All three parts are 8-pin surface mount MOSFETs with N-Channel configuration and 30V rating. However, package types differ: CSD17581Q5A (8-VSONP), RS1E240GNTB (8-HSOP), and BSZ035N03MSGATMA1 (PG-TSDSON-8). Pin assignments may vary by manufacturer. Verify pinout diagrams and PCB footprint compatibility before substitution.

Q: Which substitute part has the lowest on-resistance? A: RS1E240GNTB has the lowest maximum on-resistance at 3.3 mOhm (measured at 24A, 10V Vgs). CSD17581Q5A is 3.4 mOhm (at 16A, 10V Vgs), and BSZ035N03MSGATMA1 is 3.5 mOhm (at 20A, 10V Vgs). Differences are minimal and within typical application tolerances.

Q: What is the significance of gate charge differences? A: Gate charge (Qg) affects switching speed and drive circuit power consumption. CSD17581Q5A has 54 nC, RS1E240GNTB has 23 nC (lower, faster switching), and BSZ035N03MSGATMA1 has 74 nC (higher, slower switching). Lower gate charge reduces driver IC power dissipation and enables faster switching frequencies. Higher gate charge requires more robust drive circuitry.

Q: Are all parts RoHS3 compliant? A: Yes. CSD17581Q5A, RS1E240GNTB, and BSZ035N03MSGATMA1 are all ROHS3 Compliant with MSL Level 1 (Unlimited moisture sensitivity). All parts are REACH Unaffected and classified as EAR99 for export control purposes.

Q: What thermal performance differences exist? A: CSD17581Q5A supports highest power dissipation at case temperature (83W Tc). RS1E240GNTB is rated 27W Tc, and BSZ035N03MSGATMA1 is 69W Tc. At ambient temperature, CSD17581Q5A is 3.1W, RS1E240GNTB is 3.0W, and BSZ035N03MSGATMA1 is 2.1W. Thermal management requirements vary significantly; verify junction temperature limits for your application.

Q: Can I use BSZ035N03MSGATMA1 in a high-current application designed for CSD17581Q5A? A: No. BSZ035N03MSGATMA1 is rated for 18A continuous drain current at ambient temperature, compared to CSD17581Q5A at 24A. Using BSZ035N03MSGATMA1 in a 24A application exceeds device ratings and creates reliability risk. Use only when application current requirements are 18A or lower.

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