CSD17573Q5B Equivalent & Substitute Parts

Part Overview

The CSD17573Q5B is an N-Channel MOSFET manufactured by Texas Instruments, part of the NexFET™ series. This device is rated for 30V drain-to-source voltage with 100A continuous drain current at 25°C ambient temperature. The component is housed in an 8-VSON-CLIP (5x6) surface mount package and is classified as Active product status with full RoHS3 compliance. Substitute parts are identified when equivalent electrical and mechanical parameters are required due to inventory constraints, packaging format changes, or design flexibility within specified parameter ranges.

Substiute Parts

CSD17573Q5B

Texas InstrumentsIn Stock: 17990CSD17573Q5B Datasheet

Current PartRFQ

CSD17573Q5BT

Texas InstrumentsIn Stock: 2162CSD17573Q5BT Datasheet

Parametric EquivalentRFQ

BSC009NE2LS5ATMA1

Infineon TechnologiesIn Stock: 3255BSC009NE2LS5ATMA1 Datasheet

MFR RecommendedRFQ

BSC009NE2LS5IATMA1

Infineon TechnologiesIn Stock: 2437BSC009NE2LS5IATMA1 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the CSD17573Q5B are classified into two categories based on substitution type and parameter alignment:

Parametric Equivalent (Same Manufacturer): CSD17573Q5BT differs from the main part only in packaging format. Both devices share identical electrical specifications including 30V Vdss, 100A continuous drain current, 1mOhm RDS(on), and 64nC gate charge. The CSD17573Q5BT is supplied in Tape & Reel (TR) format versus Cut Tape (CT) & Digi-Reel® for the CSD17573Q5B. This substitution applies when packaging format compatibility with automated assembly equipment is the determining factor.

Manufacturer Recommended Alternatives (Cross-Manufacturer): BSC009NE2LS5ATMA1 and BSC009NE2LS5IATMA1 are Infineon Technologies OptiMOS™ series devices. These parts operate within the allowed parameter envelope for substitution based on the following criteria:

• Drain-to-Source Voltage: 25V (lower than 30V main part, acceptable for 30V-rated applications)
• Continuous Drain Current: 100A at Tc (matches main part specification)
• RDS(on): 0.9mOhm to 0.95mOhm (lower than 1mOhm main part, acceptable improvement)
• Gate Charge: 49nC to 57nC (lower than 64nC main part, acceptable improvement)
• Package: 8-PowerTDFN (mechanically compatible with 8-VSON-CLIP footprint)
• Operating Temperature: -55°C to 150°C (identical to main part)
• Compliance: ROHS3, MSL 1, REACH Unaffected (identical to main part)

Parameter Comparison

Engineering Selection Recommendations

CSD17573Q5BT Selection Criteria: This part is selected when the CSD17573Q5B is unavailable and packaging format compatibility with tape-and-reel automated assembly processes is required. Electrical performance is identical across all rated parameters. Both parts maintain Active product status and full RoHS3 compliance. Selection of CSD17573Q5BT introduces no design risk when the assembly process accommodates TR packaging.

BSC009NE2LS5ATMA1 Selection Criteria: This Infineon OptiMOS™ device is selected when cross-manufacturer substitution is acceptable and the application operates below 25V drain-to-source voltage. The lower Vdss rating (25V versus 30V) is acceptable for circuits designed for 25V maximum operation. The improved RDS(on) (0.9mOhm versus 1.0mOhm) and reduced gate charge (57nC versus 64nC) provide performance benefits in switching applications. Lower input capacitance (3900pF versus 9000pF) reduces gate drive requirements. Product status is Active with ROHS3 compliance. Thermal performance at Tc is reduced (74W versus 195W), requiring thermal design verification for high-power applications.

BSC009NE2LS5IATMA1 Selection Criteria: This Infineon OptiMOS™ variant is selected when the lowest gate charge specification is required within the 25V Vdss envelope. The 49nC gate charge (versus 64nC main part) and 3200pF input capacitance provide the most efficient gate drive characteristics among all substitutes. RDS(on) is 0.95mOhm. Product status is Active with ROHS3 compliance. Thermal performance at Tc is reduced (74W versus 195W), requiring thermal design verification for high-power applications.

All substitute parts maintain identical operating temperature range (-55°C to 150°C), moisture sensitivity level (MSL 1), and regulatory compliance status (REACH Unaffected, EAR99 ECCN classification).

Frequently Asked Questions (FAQ)

Q: Can CSD17573Q5BT be used as a direct replacement for CSD17573Q5B?

A: Yes. CSD17573Q5BT is a parametric equivalent with identical electrical specifications. The only difference is packaging format (Tape & Reel versus Cut Tape & Digi-Reel®). Direct substitution is valid when the assembly process accommodates TR packaging.

Q: What is the key limitation when substituting BSC009NE2LS5ATMA1 or BSC009NE2LS5IATMA1?

A: The drain-to-source voltage rating is 25V, compared to 30V for the CSD17573Q5B. These parts are suitable only for applications where the maximum drain-to-source voltage does not exceed 25V. Additionally, thermal performance at Tc is reduced (74W versus 195W), requiring verification that thermal management remains adequate.

Q: Are the Infineon BSC009 devices mechanically compatible with the Texas Instruments CSD17573Q5B footprint?

A: Both device families use 8-pin PowerTDFN packages with compatible mechanical dimensions. The BSC009NE2LS5ATMA1 and BSC009NE2LS5IATMA1 use PG-TDSON-8-7 packaging, which is mechanically compatible with the 8-VSON-CLIP (5x6) footprint of the CSD17573Q5B for PCB layout purposes.

Q: Which substitute part offers the best gate drive efficiency?

A: BSC009NE2LS5IATMA1 provides the lowest gate charge (49nC) and input capacitance (3200pF), resulting in the most efficient gate drive characteristics. This reduces gate driver power dissipation and switching losses in high-frequency applications.

Q: Do all substitute parts meet the same compliance requirements as the main part?

A: Yes. CSD17573Q5BT, BSC009NE2LS5ATMA1, and BSC009NE2LS5IATMA1 all maintain ROHS3 compliance, MSL 1 (Unlimited), REACH Unaffected status, and EAR99 ECCN classification identical to the CSD17573Q5B.

Q: What is the continuous drain current rating at ambient temperature for the Infineon substitutes?

A: BSC009NE2LS5ATMA1 is rated for 41A continuous drain current at 25°C ambient temperature (Ta). BSC009NE2LS5IATMA1 is rated for 40A at Ta. Both devices are rated for 100A at case temperature (Tc). The CSD17573Q5B is rated for 100A at Ta, making it superior for ambient temperature operation.

Q: Can BSC009 devices be used in applications requiring 100A continuous current at 25°C ambient?

A: No. The Infineon BSC009 devices are rated for only 40-41A continuous current at 25°C ambient temperature. They achieve 100A rating only at case temperature (Tc). For applications requiring 100A at Ta, the CSD17573Q5B or CSD17573Q5BT must be used.