CSD17552Q3A N-Channel 30V MOSFET Equivalent & Substitute Parts

Part Overview

The CSD17552Q3A is an N-Channel 30V MOSFET manufactured by Texas Instruments in the NexFET™ series. This device operates as a surface mount power transistor rated for 15A continuous drain current at 25°C (Ta) and 60A at case temperature (Tc), with a maximum drain-source voltage of 30V. The part is housed in an 8-VSONP (3x3.3) package and is currently in active production status with 7900 units in stock.

Equivalent and substitute parts are necessary when the primary part becomes unavailable, when design requirements demand alternative electrical characteristics, or when different package configurations are required for specific application layouts. This reference provides engineering-grade alternatives that maintain functional compatibility within defined electrical and mechanical parameters.

Key Parameters

Parameter	Value	Unit
Drain-Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Ta)	15	A
Continuous Drain Current @ Case (Tc)	60	A
On-Resistance (Rds On) @ 10V, 11A	6	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	1.9	V
Gate Charge (Qg) @ 4.5V	12	nC
Input Capacitance (Ciss) @ 15V	2050	pF
Power Dissipation (Ta)	2.6	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-VSONP (3x3.3)	-
FET Type	N-Channel	-
Technology	MOSFET (Metal Oxide)	-
RoHS Status	ROHS3 Compliant	-
Moisture Sensitivity Level	1 (Unlimited)	-

Substitute Part Grouping Explanation

Substitution of the CSD17552Q3A is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-Source Voltage (Vdss): Must equal 30V
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Operating Temperature Range: Must support -55°C to 150°C
Mounting Type: Must be Surface Mount
RoHS Status: Must be ROHS3 Compliant
Moisture Sensitivity Level: Must be 1 (Unlimited)

Secondary Compatibility Parameters:

Continuous Drain Current (Ta/Tc): Substitute must meet or exceed 15A @ 25°C
On-Resistance (Rds On): Lower or equal values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Affects gate drive requirements
Package footprint compatibility for PCB layout

Substitutes are grouped into two categories: direct equivalents from Texas Instruments (same series, enhanced specifications) and cross-manufacturer alternatives (different package types, comparable electrical performance).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ Ta (A)	Id @ Tc (A)	Rds On @ 10V (mOhm)	Qg @ 10V (nC)	Package	Status
CSD17552Q3A	Texas Instruments	30	15	60	6	12	8-VSONP (3x3.3)	Active
CSD17577Q3A	Texas Instruments	30	35	N/A	4.8	35	8-VSONP (3x3.3)	Active
AON7400A	Alpha & Omega Semiconductor	30	15	40	7.5	24	8-DFN-EP (3x3)	Not For New Designs
BSZ065N03LSATMA1	Infineon Technologies	30	12	40	6.5	10	PG-TSDSON-8-FL	Active
DMT3006LFV-7	Diodes Incorporated	30	N/A	60	7	8.4	PowerDI3333-8	Active
DMT35M7LFV-7	Diodes Incorporated	30	N/A	76	5	36	PowerDI3333-8 (Type UX)	Active
FDMC7672	Fairchild Semiconductor	30	16.9	20	5.7	57	8-MLP (3.3x3.3)	Active
FDMC7672S	onsemi	30	14.8	18	6	42	8-MLP (3.3x3.3)	Active
FDMC7680	onsemi	30	14.8	N/A	7.2	42	8-MLP (3.3x3.3)	Active
FDMC8651	onsemi	30	15	20	6.1	27.2	Power33	Active
IRFH3702TRPBF	Infineon Technologies	30	16	42	7.1	14	8-PQFN (3x3)	Not For New Designs

Engineering Selection Recommendations

Tier 1 - Direct Manufacturer Equivalent:

CSD17577Q3A (Texas Instruments) is the primary recommended substitute. This device maintains the same 30V Vdss rating, identical package footprint (8-VSONP 3x3.3), and active product status. The CSD17577Q3A provides enhanced continuous drain current (35A @ Ta) and lower on-resistance (4.8 mOhm @ 10V), making it suitable for applications requiring higher current capacity while maintaining backward compatibility with existing PCB layouts. Both devices are ROHS3 compliant with MSL 1 rating.

Tier 2 - Active Cross-Manufacturer Alternatives:

DMT3006LFV-7 and DMT35M7LFV-7 (Diodes Incorporated) are active production alternatives offering 30V Vdss with 60A and 76A case current ratings respectively. These devices use the PowerDI3333-8 package, which differs from the original 8-VSONP footprint and requires PCB layout modification. Both maintain full compliance with RoHS3 and MSL 1 specifications.

BSZ065N03LSATMA1 (Infineon Technologies OptiMOS™ series) provides 30V Vdss with 12A continuous current and 40A case current. The PG-TSDSON-8-FL package differs from the original, requiring layout verification. This device is in active production status.

FDMC7672S (onsemi PowerTrench® SyncFET™) offers 30V Vdss with 14.8A continuous current, matching the original device's current rating. The 8-MLP package is compatible with similar footprint requirements. Active production status confirmed.

Tier 3 - Legacy/Restricted Status:

AON7400A (Alpha & Omega Semiconductor) and IRFH3702TRPBF (Infineon Technologies) are marked "Not For New Designs" and should only be considered for replacement applications in existing systems where supply chain continuity is critical. Both maintain 30V Vdss and RoHS3 compliance.

Selection Criteria Summary:

For direct PCB compatibility: Select CSD17577Q3A
For higher current capacity: Select DMT35M7LFV-7 or DMT3006LFV-7
For active production with alternative packages: Select FDMC7672S or BSZ065N03LSATMA1
Avoid new designs with AON7400A and IRFH3702TRPBF

All recommended substitutes maintain the required operating temperature range (-55°C to 150°C), RoHS3 compliance, and MSL 1 moisture sensitivity rating.

Frequently Asked Questions (FAQ)

Q1: Can CSD17577Q3A be used as a direct replacement for CSD17552Q3A?

A: Yes. CSD17577Q3A is a direct substitute from the same manufacturer (Texas Instruments) and series (NexFET™). Both devices use the identical 8-VSONP (3x3.3) package, operate at 30V Vdss, and are ROHS3 compliant with MSL 1 rating. The CSD17577Q3A provides higher continuous drain current (35A vs. 15A @ Ta) and lower on-resistance (4.8 mOhm vs. 6 mOhm @ 10V), making it a performance-enhanced equivalent. No PCB layout changes are required.

Q2: What is the difference between continuous drain current ratings at Ta and Tc?

A: Ta (ambient temperature) ratings specify maximum continuous current at 25°C ambient conditions, while Tc (case temperature) ratings specify maximum current when the device case reaches a specified temperature (typically 100°C or higher). Tc ratings are higher because the device can dissipate more power at elevated case temperatures. For circuit design, use the Ta rating for conservative thermal calculations unless active cooling maintains case temperature below ambient.

Q3: Why do some substitutes have different package types?

A: Package type differences reflect manufacturing process variations across different semiconductor manufacturers. While electrical performance may be equivalent, different packages (8-VSONP vs. 8-DFN-EP vs. PowerDI3333-8) have different physical dimensions and thermal characteristics. Package changes require PCB layout verification to ensure proper thermal management and electrical connectivity. Consult package datasheets for exact footprint dimensions before PCB redesign.

Q4: What does "Not For New Designs" status mean?

A: "Not For New Designs" indicates the manufacturer has discontinued active development and is transitioning the product to end-of-life status. These parts may still be available from inventory but are not recommended for new circuit designs. Use these parts only for replacement in existing systems or when supply chain alternatives are unavailable. For new designs, select parts with "Active" status.

Q5: Are all listed substitutes RoHS3 compliant?

A: Yes. All substitute parts listed in this reference are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity rating, matching the original CSD17552Q3A specifications. This ensures compatibility with modern manufacturing processes and environmental regulations.

Q6: How do gate charge (Qg) differences affect circuit design?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower Qg values (like CSD17552Q3A at 12 nC @ 4.5V) reduce switching losses and allow faster switching speeds with lower gate drive power requirements. Higher Qg values (like FDMC7672 at 57 nC @ 10V) require more gate drive energy but may offer other performance benefits. Gate drive circuit design must accommodate the specific Qg of the selected device.

Q7: Can I substitute a device with lower on-resistance (Rds On)?

A: Yes. Lower on-resistance values indicate improved performance and reduced power dissipation. A substitute with lower Rds On will generate less heat and improve overall circuit efficiency. However, verify that the gate drive voltage and current capabilities of your circuit can properly switch the substitute device. Some low Rds On devices may require different gate drive characteristics.

Q8: What is the significance of input capacitance (Ciss)?

A: Input capacitance affects gate drive circuit requirements and switching speed. Higher Ciss values require more gate charge and may slow switching transitions. The CSD17552Q3A has Ciss of 2050 pF @ 15V. Substitutes with significantly different Ciss values may require gate drive circuit adjustments to maintain switching performance and minimize electromagnetic interference.

Q9: Are package footprints interchangeable between 8-VSONP and 8-DFN-EP?

A: No. While both are 8-pin surface mount packages, 8-VSONP (3x3.3) and 8-DFN-EP (3x3) have different physical dimensions and pin layouts. PCB footprints are not interchangeable without layout redesign. Verify exact package dimensions in device datasheets before selecting a substitute with a different package type.

Q10: Which substitute offers the best thermal performance?

A: DMT35M7LFV-7 (Diodes Incorporated) offers the lowest power dissipation at 1.98W @ Ta and highest case current rating (76A @ Tc), indicating superior thermal performance. However, this device uses the PowerDI3333-8 package, which differs from the original 8-VSONP footprint. Thermal performance also depends on PCB copper area, thermal vias, and heat sink design. Consult thermal analysis sections of device datasheets for specific application conditions.

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