CSD13306W N-Channel MOSFET 12V 3.5A Equivalent & Substitute Parts

Part Overview

The CSD13306W is an N-Channel MOSFET manufactured by Texas Instruments, part of the NexFET™ series. This device is rated for 12V drain-to-source voltage with a continuous drain current of 3.5A at 25°C ambient temperature. The component is housed in a 6-DSBGA (1x1.5mm) surface mount package and is designed for low-power switching applications requiring compact form factors.

The CSD13306W maintains Active product status and is ROHS3 compliant with MSL Level 1 (Unlimited moisture sensitivity). This part is suitable for direct component selection in new designs and replacement applications where equivalent electrical and mechanical parameters are required.

Alternative models become necessary when inventory constraints occur, when specific packaging preferences are required, or when performance enhancements within compatible parameter ranges are needed.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	12	V
Continuous Drain Current (Id) @ 25°C	3.5	A (Ta)
RDS(on) Max @ 1.5A, 4.5V	10.2	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	1.3	V (Max)
Gate Charge (Qg) @ 4.5V	11.2	nC (Max)
Input Capacitance (Ciss) @ 6V	1370	pF (Max)
Power Dissipation (Max)	1.9	W (Ta)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	6-DSBGA (1x1.5mm)	Surface Mount
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitute parts for the CSD13306W are classified based on strict electrical and mechanical compatibility criteria:

Parametric Equivalent Classification: Parts qualify as parametric equivalents when they maintain identical or functionally equivalent specifications across all critical parameters: Vdss (12V), FET type (N-Channel), technology (MOSFET Metal Oxide), operating temperature range (-55°C to 150°C), and RoHS3 compliance status.

Manufacturer Recommended Classification: Parts designated as manufacturer recommended substitutes may exhibit variations in specific parameters (such as continuous drain current, RDS(on), or gate charge) while maintaining the same voltage rating and technology. These parts are suitable for applications where the enhanced or alternative specifications provide functional compatibility within the target circuit design.

Key Parameters Determining Substitution:

Drain-to-Source Voltage (Vdss): Must be 12V
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Operating Temperature: Must support -55°C to 150°C range
Mounting Type: Surface Mount
RoHS Compliance: ROHS3 Compliant

Parameter Comparison

Parameter	CSD13306W (Main)	CSD13306WT (Parametric Equivalent)	PMCM6501VNEZ (Manufacturer Recommended)
Manufacturer	Texas Instruments	Texas Instruments	NXP USA Inc.
Drain-to-Source Voltage (Vdss)	12V	12V	12V
Continuous Drain Current (Id) @ 25°C	3.5A (Ta)	3.5A (Ta)	7.3A (Ta)
RDS(on) Max @ Specified Conditions	10.2mOhm @ 1.5A, 4.5V	10.2mOhm @ 1.5A, 4.5V	18mOhm @ 3A, 4.5V
Gate Threshold Voltage (Vgs(th)) @ 250µA	1.3V (Max)	1.3V (Max)	900mV (Max)
Gate Charge (Qg) @ 4.5V	11.2nC (Max)	11.2nC (Max)	24nC (Max)
Input Capacitance (Ciss) @ 6V	1370pF (Max)	1370pF (Max)	920pF (Max)
Power Dissipation (Max)	1.9W (Ta)	1.9W (Ta)	556mW (Ta), 12.5W (Tc)
Operating Temperature Range	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)
Package Type	6-DSBGA (1x1.5mm)	6-DSBGA (1x1.5mm)	6-WLCSP (1.48x0.98mm)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Not specified in data
Product Status	Active	Active	Active

Engineering Selection Recommendations

CSD13306WT Selection Criteria: The CSD13306WT is a parametric equivalent substitute manufactured by Texas Instruments. This part maintains identical electrical specifications to the CSD13306W across all critical parameters including Vdss, Id, RDS(on), gate charge, and input capacitance. The CSD13306WT is housed in the same 6-DSBGA (1x1.5mm) package and shares identical ROHS3 compliance and Active product status. Selection of CSD13306WT is appropriate when the primary CSD13306W is unavailable and direct functional replacement is required without circuit redesign. Current inventory of 2400 pieces is available.

PMCM6501VNEZ Selection Criteria: The PMCM6501VNEZ is designated as a manufacturer recommended substitute by NXP USA Inc. This part maintains the same 12V Vdss rating and N-Channel MOSFET technology with identical operating temperature range (-55°C to 150°C). The PMCM6501VNEZ exhibits enhanced continuous drain current (7.3A versus 3.5A) and improved power dissipation capability (12.5W at Tc versus 1.9W at Ta). However, this part features a different package type (6-WLCSP 1.48x0.98mm versus 6-DSBGA 1x1.5mm), higher gate charge (24nC versus 11.2nC), and higher RDS(on) at specified test conditions (18mOhm versus 10.2mOhm). Selection of PMCM6501VNEZ is appropriate for applications requiring higher current handling capability or improved thermal performance, provided that PCB layout and assembly processes are compatible with the 6-WLCSP package footprint. Current inventory of 6158 pieces is available.

Compliance Basis: All substitute parts maintain Active product status and support the full operating temperature range of -55°C to 150°C. Both Texas Instruments parts (CSD13306W and CSD13306WT) are ROHS3 compliant with MSL Level 1. Selection between these parts is based on availability, inventory levels, and specific application requirements within the defined electrical parameter ranges.

Frequently Asked Questions (FAQ)

Q: Can CSD13306WT be used as a direct replacement for CSD13306W without circuit modification?

A: Yes. The CSD13306WT is a parametric equivalent with identical electrical specifications (Vdss, Id, RDS(on), gate charge, input capacitance) and the same 6-DSBGA (1x1.5mm) package footprint. No circuit redesign or PCB layout changes are required.

Q: What are the key differences between CSD13306W and PMCM6501VNEZ?

A: The PMCM6501VNEZ differs in three primary areas: (1) Package type is 6-WLCSP (1.48x0.98mm) instead of 6-DSBGA (1x1.5mm), requiring different PCB footprint and assembly process; (2) Continuous drain current is 7.3A versus 3.5A, providing higher current capacity; (3) Gate charge is 24nC versus 11.2nC, affecting switching speed characteristics. RDS(on) at specified test conditions is higher (18mOhm @ 3A versus 10.2mOhm @ 1.5A).

Q: Is the PMCM6501VNEZ suitable for all applications using CSD13306W?

A: The PMCM6501VNEZ is suitable for applications where the enhanced current rating (7.3A) and improved thermal performance (12.5W at Tc) provide functional compatibility. However, the different package footprint (6-WLCSP versus 6-DSBGA) requires PCB redesign and assembly process validation. The higher gate charge may affect switching frequency characteristics in high-speed applications.

Q: What is the moisture sensitivity level for these parts?

A: The CSD13306W and CSD13306WT both carry MSL Level 1 (Unlimited), indicating no moisture sensitivity restrictions during storage or handling. Moisture sensitivity data for PMCM6501VNEZ is not provided in the available specifications.

Q: Are all substitute parts RoHS compliant?

A: The CSD13306W and CSD13306WT are both ROHS3 compliant. RoHS compliance status for PMCM6501VNEZ is not specified in the provided data.

Q: What inventory levels are available for each part?

A: CSD13306W has 41,400 pieces in stock. CSD13306WT has 2,400 pieces in stock. PMCM6501VNEZ has 6,158 pieces in stock. All parts are listed as New Original In Stock.

Q: Can CSD13306WT and PMCM6501VNEZ be used interchangeably on the same PCB?

A: No. The CSD13306WT uses the same 6-DSBGA (1x1.5mm) package as the CSD13306W and can use identical PCB footprints. The PMCM6501VNEZ uses a different 6-WLCSP (1.48x0.98mm) package requiring a different PCB footprint design. These parts cannot be used interchangeably without PCB redesign.

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