CSD13302W N-Channel MOSFET 12V 1.6A Equivalent & Substitute Parts

Part Overview

The CSD13302W is an N-Channel MOSFET manufactured by Texas Instruments, part of the NexFET™ series. This device is rated for 12V drain-to-source voltage with 1.6A continuous drain current and is packaged in a 4-DSBGA (1x1) surface mount configuration. The component is designed for low-power switching applications requiring compact form factors and efficient thermal performance.

The CSD13302W maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1). Identifying equivalent substitute parts is necessary for supply chain continuity, inventory optimization, and design flexibility when the primary part number becomes unavailable or when alternative sourcing is required.

Substiute Parts

CSD13302W
Texas InstrumentsIn Stock: 6225CSD13302W Datasheet
CSD13302W
Current Part
CSD13302WT
Texas InstrumentsIn Stock: 1410CSD13302WT Datasheet
CSD13302WT
Parametric Equivalent

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 12 V
Continuous Drain Current (Id) @ 25°C 1.6 A (Ta)
On-Resistance (Rds On Max) @ 1A, 4.5V 17.1 mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA 1.3 V
Gate Charge (Qg Max) @ 4.5V 7.8 nC
Input Capacitance (Ciss Max) @ 6V 862 pF
Power Dissipation (Max) 1.8 W (Ta)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type 4-DSBGA (1x1) Surface Mount
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -

Substitute Part Grouping Explanation

Substitution eligibility for the CSD13302W is determined by strict electrical and mechanical parameter matching within the N-Channel MOSFET category. The critical parameters that define substitution compatibility are:

Electrical Parameters:

  • Drain to Source Voltage (Vdss): 12V
  • Continuous Drain Current (Id): 1.6A @ 25°C
  • On-Resistance (Rds On): 17.1 mOhm @ 1A, 4.5V
  • Gate Threshold Voltage (Vgs(th)): 1.3V @ 250µA
  • Gate Charge (Qg): 7.8 nC @ 4.5V
  • Input Capacitance (Ciss): 862 pF @ 6V
  • Power Dissipation: 1.8W (Ta)
  • Operating Temperature: -55°C to 150°C

Mechanical Parameters:

  • Package Type: 4-DSBGA (1x1)
  • Mounting Type: Surface Mount
  • Form Factor: 4-UFBGA, DSBGA

Compliance Parameters:

  • RoHS3 Compliant
  • Moisture Sensitivity Level: 1 (Unlimited)
  • REACH Status: REACH Unaffected

Substitute parts must match all electrical specifications, maintain identical package dimensions and pin configuration, and satisfy the same regulatory compliance requirements. Parts meeting these criteria are classified as parametric equivalents and direct substitutes.

Parameter Comparison

Parameter CSD13302W CSD13302WT Match Status
Manufacturer Texas Instruments Texas Instruments Identical
Series NexFET™ NexFET™ Identical
FET Type N-Channel N-Channel Identical
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) Identical
Drain to Source Voltage (Vdss) 12 V 12 V Identical
Continuous Drain Current (Id) @ 25°C 1.6 A (Ta) 1.6 A (Ta) Identical
Rds On (Max) @ 1A, 4.5V 17.1 mOhm 17.1 mOhm Identical
Vgs(th) (Max) @ 250µA 1.3 V 1.3 V Identical
Gate Charge (Qg Max) @ 4.5V 7.8 nC 7.8 nC Identical
Input Capacitance (Ciss Max) @ 6V 862 pF 862 pF Identical
Power Dissipation (Max) 1.8 W (Ta) 1.8 W (Ta) Identical
Operating Temperature Range -55°C to 150°C (TJ) -55°C to 150°C (TJ) Identical
Mounting Type Surface Mount Surface Mount Identical
Package Type 4-DSBGA (1x1) 4-DSBGA (1x1) Identical
Product Status Active Active Identical
RoHS Status ROHS3 Compliant ROHS3 Compliant Identical
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) Identical
REACH Status REACH Unaffected REACH Unaffected Identical

Engineering Selection Recommendations

The CSD13302WT is a direct parametric equivalent to the CSD13302W. Both devices are manufactured by Texas Instruments within the NexFET™ series and share identical electrical specifications, package configuration, and regulatory compliance status.

Selection Criteria Based on Provided Data:

  1. Product Status: Both parts maintain Active status, ensuring continued manufacturer support and availability.

  2. Regulatory Compliance: Both devices are RoHS3 compliant and REACH unaffected, meeting current environmental and safety standards for electronic components.

  3. Moisture Sensitivity: Both parts carry MSL 1 (Unlimited) rating, indicating no moisture-related handling restrictions during storage or assembly.

  4. Electrical Equivalence: All electrical parameters—voltage rating, current capacity, on-resistance, gate characteristics, and thermal performance—are identical between the two part numbers.

  5. Package Compatibility: Both devices use the 4-DSBGA (1x1) surface mount package, ensuring direct PCB layout compatibility without design modifications.

  6. Inventory Availability: The CSD13302W has 6200 units in stock, while the CSD13302WT has 1372 units available. Selection between these parts may be driven by supply chain requirements and delivery timelines.

The CSD13302WT can be used as a direct replacement for the CSD13302W in all applications without circuit redesign or performance degradation.

Frequently Asked Questions (FAQ)

Q: What is the difference between CSD13302W and CSD13302WT?

A: Based on the provided specifications, there are no electrical or mechanical differences between these two part numbers. Both are N-Channel MOSFETs with identical voltage ratings (12V), current capacity (1.6A), on-resistance (17.1 mOhm), and package configuration (4-DSBGA 1x1). The suffix variation typically indicates different manufacturing dates, tape reel configurations, or internal quality tracking codes from Texas Instruments, but the functional specifications remain identical.

Q: Can I substitute CSD13302WT for CSD13302W in my existing design?

A: Yes. The CSD13302WT is a direct parametric equivalent with identical electrical specifications and package type. No circuit modifications, PCB layout changes, or firmware updates are required. The device can be used as a drop-in replacement.

Q: Are there any compliance or certification differences between these parts?

A: No. Both parts carry identical compliance certifications: RoHS3 compliant, REACH unaffected, and MSL 1 (Unlimited). Both maintain Active product status with Texas Instruments.

Q: What is the 4-DSBGA package, and is it compatible with standard PCB assembly equipment?

A: The 4-DSBGA (1x1) is a 4-pin ultra-fine ball grid array package in a 1mm x 1mm footprint. It is a surface mount package compatible with standard pick-and-place assembly equipment and reflow soldering processes. The package designation "4-UFBGA, DSBGA" indicates the ball grid array configuration used for this device.

Q: Which part should I order if both are available?

A: Selection between CSD13302W and CSD13302WT depends on supply chain factors. The CSD13302W has higher inventory (6200 units) compared to CSD13302WT (1372 units). For immediate availability, the CSD13302W is preferable. For long-term supply chain planning, either part is functionally equivalent and can be used interchangeably.

Q: What are the key electrical parameters I should verify when substituting this MOSFET?

A: The critical parameters for substitution verification are: Drain-to-Source Voltage (Vdss) of 12V, Continuous Drain Current (Id) of 1.6A at 25°C, On-Resistance (Rds On) of 17.1 mOhm at 1A and 4.5V gate voltage, and Operating Temperature Range of -55°C to 150°C. All these parameters are identical between CSD13302W and CSD13302WT.

Q: Is the 4-DSBGA package suitable for high-volume production?

A: Yes. The 4-DSBGA (1x1) package is designed for automated surface mount assembly and is compatible with standard manufacturing processes including pick-and-place equipment, reflow soldering, and automated optical inspection (AOI) systems. Both part numbers are available in Tape & Reel (TR) packaging for high-volume production environments.

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