CPH6531-TL-E Equivalent & Substitute Parts

Part Overview

The CPH6531-TL-E is a Bipolar (BJT) Transistor Array featuring a dual PNP configuration manufactured by onsemi. This surface mount component is rated for 50V collector-emitter breakdown voltage and 1A maximum collector current, with a maximum power dissipation of 1.1W. The device operates at a transition frequency of 420MHz and is housed in a 6-CPH (SOT-23-6 Thin) package.

The CPH6531-TL-E is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this dual PNP transistor array.

Substiute Parts

CPH6531-TL-E
onsemiIn Stock: 1214CPH6531-TL-E Datasheet
CPH6531-TL-E
Current Part
QST9TR
Rohm SemiconductorIn Stock: 3952QST9TR Datasheet
QST9TR
Similar

Key Parameters

Parameter Value Unit
Transistor Type 2 PNP (Dual)
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 380mV @ 10mA, 500mA
Current - Collector Cutoff (Max) 100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA, 2V
Power - Max 1.1 W
Frequency - Transition 420 MHz
Operating Temperature (TJ) 150 °C
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the CPH6531-TL-E is determined by the following critical parameters:

Functional Equivalence Criteria:

  • Transistor configuration: Dual PNP (2 PNP)
  • Maximum collector current: 1A or greater
  • Mounting type: Surface Mount
  • Package compatibility: SOT-23-6 Thin or TSOT-23-6

Voltage and Power Considerations:

  • Collector-emitter breakdown voltage must equal or exceed the application requirement
  • Maximum power dissipation must support the intended thermal environment
  • Saturation voltage characteristics must be compatible with circuit design margins

Performance Parameters:

  • DC current gain (hFE) and transition frequency determine switching speed and amplification capability
  • Collector cutoff current affects leakage characteristics in standby conditions

The QST9TR from Rohm Semiconductor qualifies as a substitute based on matching transistor type (2 PNP), identical maximum collector current (1A), compatible surface mount packaging (TSOT-23-6), and equivalent MSL rating (1). The QST9TR operates at a lower maximum voltage rating (30V versus 50V) and reduced transition frequency (320MHz versus 420MHz), which represents a functional downgrade in voltage capability but maintains compatibility for applications operating within 30V specifications.

Parameter Comparison

Parameter CPH6531-TL-E (onsemi) QST9TR (Rohm Semiconductor) Unit
Transistor Type 2 PNP (Dual) 2 PNP (Dual)
Current - Collector (Ic) (Max) 1 1 A
Voltage - Collector Emitter Breakdown (Max) 50 30 V
Vce Saturation (Max) @ Ib, Ic 380mV @ 10mA, 500mA 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max) 100 100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA, 2V 270 @ 100mA, 2V
Power - Max 1.1 1.25 W
Frequency - Transition 420 320 MHz
Operating Temperature (TJ) 150 150 °C
Mounting Type Surface Mount Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Product Status Obsolete Active
REACH Status REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

CPH6531-TL-E (onsemi): The CPH6531-TL-E is classified as obsolete, indicating discontinued manufacturing and limited future availability. This component carries REACH Unaffected status and EAR99 export classification. Current inventory of 1,182 pieces is available through existing stock channels.

QST9TR (Rohm Semiconductor): The QST9TR is an active product with confirmed ongoing production and supply. This component is RoHS3 Compliant and carries REACH Unaffected status with EAR99 export classification. Inventory availability is higher at 3,900 pieces. The QST9TR is suitable for new designs and applications where the 30V maximum voltage rating is sufficient.

Selection Basis:

  • For applications requiring 50V operation: The CPH6531-TL-E remains the only option among provided parts.
  • For applications operating at 30V or below: The QST9TR is the preferred selection due to active product status, higher current gain (270 versus 200), superior power rating (1.25W versus 1.1W), and greater supply availability.
  • Both components share identical collector current capacity (1A), operating temperature range (150°C), package form factor (SOT-23-6 Thin), and moisture sensitivity classification (MSL 1).

Frequently Asked Questions (FAQ)

Q: Can the QST9TR directly replace the CPH6531-TL-E in all applications?

A: Direct replacement is limited by voltage rating. The QST9TR operates at a maximum collector-emitter breakdown voltage of 30V, compared to the CPH6531-TL-E at 50V. The QST9TR is suitable only for applications where the supply voltage and peak transient voltages do not exceed 30V. Applications requiring 50V operation must retain the CPH6531-TL-E or identify alternative parts with equivalent voltage ratings.

Q: Are the package dimensions identical between these parts?

A: Both components use SOT-23-6 Thin (TSOT-23-6) surface mount packaging. Physical dimensions and PCB footprints are compatible. Pin assignments and functional layout are equivalent for dual PNP transistor arrays in this package class.

Q: What is the significance of the higher DC current gain in the QST9TR?

A: The QST9TR exhibits a minimum DC current gain (hFE) of 270 at 100mA and 2V, compared to 200 for the CPH6531-TL-E. Higher current gain indicates greater amplification capability and reduced base current requirements for a given collector current. This characteristic may improve circuit efficiency and reduce drive circuit complexity in applications utilizing the QST9TR.

Q: How do the saturation voltage characteristics compare?

A: The CPH6531-TL-E specifies 380mV maximum saturation voltage at 10mA base current and 500mA collector current. The QST9TR specifies 350mV at 25mA base current and 500mA collector current. The QST9TR exhibits lower saturation voltage at higher base current, indicating superior switching performance in saturated operation. Both values are within typical design margins for switching applications.

Q: What is the impact of the 100MHz transition frequency difference?

A: The CPH6531-TL-E operates at 420MHz transition frequency, while the QST9TR operates at 320MHz. This 100MHz difference affects maximum switching speed and high-frequency performance. Applications requiring operation above 320MHz must use the CPH6531-TL-E. Applications operating below 320MHz are unaffected by this parameter difference.

Q: Are there compliance or regulatory differences between these parts?

A: Both components carry REACH Unaffected status and EAR99 export classification. The QST9TR additionally carries RoHS3 Compliance certification. Both components have MSL 1 (Unlimited) moisture sensitivity ratings. No regulatory barriers exist to substitution within voltage and frequency operating parameters.

Q: What is the practical implication of the 0.15W power rating difference?

A: The QST9TR is rated for 1.25W maximum power dissipation, compared to 1.1W for the CPH6531-TL-E. This 0.15W difference provides additional thermal margin in the QST9TR for continuous operation or transient power events. Applications operating near the 1.1W limit of the CPH6531-TL-E benefit from the increased power rating of the QST9TR.

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