CPH6442-TL-E Equivalent & Substitute Parts

Part Overview

The CPH6442-TL-E is an N-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with 6A continuous drain current at 25°C. This device is designed for surface mount applications in the SOT-23-6 package and is classified as obsolete. Due to its obsolete status, identifying equivalent and substitute parts is necessary to maintain design continuity and ensure component availability for production and repair applications.

Substiute Parts

CPH6442-TL-E
onsemiIn Stock: 3768CPH6442-TL-E Datasheet
CPH6442-TL-E
Current Part
DMN6040SVT-7
Diodes IncorporatedIn Stock: 31364DMN6040SVT-7 Datasheet
DMN6040SVT-7
Similar

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 60 V
Continuous Drain Current (Id) @ 25°C 6 A
Rds On (Max) @ 3A, 10V 43 mOhm
Gate Threshold Voltage (Vgs(th)) @ 1mA 2.6 V
Gate Charge (Qg) @ 10V 20 nC
Input Capacitance (Ciss) @ 20V 1040 pF
Power Dissipation (Max) 1.6 W
Operating Temperature (TJ) 150 °C
Package Type SOT-23-6
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitution of the CPH6442-TL-E is determined by the following critical electrical and mechanical parameters:

Voltage Rating: The substitute part must maintain a Vdss rating of 60V or higher to ensure safe operation within the original design envelope.

Current Rating: The substitute part must support a continuous drain current of 6A or higher at 25°C to meet or exceed the original device performance.

On-Resistance (Rds On): The substitute part must maintain comparable on-resistance characteristics to ensure thermal performance and power dissipation remain within acceptable limits.

Gate Charge (Qg): The substitute part must have gate charge specifications compatible with the original gate drive circuitry.

Package Compatibility: The substitute part must be compatible with SOT-23-6 package footprints or equivalent surface mount packages that allow direct board-level substitution.

Threshold Voltage (Vgs(th)): The substitute part must have a threshold voltage within the operating range of the original gate drive circuit.

The DMN6040SVT-7 from Diodes Incorporated meets these substitution criteria with equivalent voltage and current ratings, compatible on-resistance, and compatible package specifications.

Parameter Comparison

Parameter CPH6442-TL-E (onsemi) DMN6040SVT-7 (Diodes Inc.) Unit
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 60 V
Continuous Drain Current (Id) @ 25°C 6 5 A
Rds On (Max) @ Vgs 10V 43 @ 3A 44 @ 4.3A mOhm
Gate Threshold Voltage (Vgs(th)) (Max) 2.6 @ 1mA 3.0 @ 250µA V
Gate Charge (Qg) @ 10V 20 22.4 nC
Input Capacitance (Ciss) @ Vds 1040 @ 20V 1287 @ 25V pF
Maximum Gate Voltage (Vgs) ±20 ±20 V
Power Dissipation (Max) 1.6 1.2 W
Operating Temperature (TJ) 150 −55 to 150 °C
Mounting Type Surface Mount Surface Mount
Package / Case SOT-23-6 SOT-23-6 Thin, TSOT-23-6

Engineering Selection Recommendations

The DMN6040SVT-7 is an active product with full RoHS3 compliance and REACH unaffected status, providing long-term component availability and regulatory compliance advantages over the obsolete CPH6442-TL-E.

Both devices share identical voltage ratings (60V Vdss) and compatible on-resistance characteristics (43 mOhm vs. 44 mOhm), ensuring equivalent thermal performance in most applications. The DMN6040SVT-7 operates across an extended temperature range (−55°C to 150°C) compared to the CPH6442-TL-E, providing greater operational flexibility.

The primary design consideration is the continuous drain current rating: the CPH6442-TL-E is rated for 6A while the DMN6040SVT-7 is rated for 5A. Applications requiring sustained currents above 5A must evaluate whether the 1A reduction is acceptable for the specific circuit topology and thermal management strategy.

Gate charge and input capacitance values are comparable between devices, indicating compatible gate drive requirements. Both devices maintain ±20V maximum gate voltage ratings and are packaged in SOT-23-6 surface mount configurations, enabling direct board-level substitution.

Frequently Asked Questions (FAQ)

Q: Can the DMN6040SVT-7 directly replace the CPH6442-TL-E in all applications?

A: Direct substitution is possible for applications where the continuous drain current requirement does not exceed 5A. The DMN6040SVT-7 maintains equivalent voltage ratings, on-resistance characteristics, and package compatibility. Applications requiring sustained currents above 5A require circuit re-evaluation.

Q: What are the key differences between these two devices?

A: The primary differences are continuous drain current rating (6A vs. 5A), power dissipation rating (1.6W vs. 1.2W), and operating temperature range (150°C vs. −55°C to 150°C). Electrical characteristics including Vdss, Rds On, and gate charge are comparable.

Q: Are the packages physically compatible?

A: Both devices use SOT-23-6 surface mount packages. The DMN6040SVT-7 is available in SOT-23-6 Thin and TSOT-23-6 variants. Physical compatibility with existing PCB footprints is confirmed for standard SOT-23-6 layouts.

Q: What is the impact of the gate charge difference?

A: The gate charge difference (20 nC vs. 22.4 nC) is approximately 12% higher for the DMN6040SVT-7. This requires slightly more gate drive energy but remains compatible with standard gate drive circuits designed for the original device.

Q: Does the DMN6040SVT-7 have better compliance status?

A: Yes. The DMN6040SVT-7 is an active product with RoHS3 compliance and REACH unaffected status, whereas the CPH6442-TL-E is obsolete. This provides superior long-term availability and regulatory compliance for new designs and production continuity.

Q: How do the on-resistance characteristics compare?

A: Both devices exhibit comparable on-resistance at 10V gate voltage (43 mOhm at 3A for CPH6442-TL-E vs. 44 mOhm at 4.3A for DMN6040SVT-7). Thermal performance and power dissipation in typical applications remain equivalent.

Q: What is the threshold voltage difference impact?

A: The threshold voltage is slightly higher for the DMN6040SVT-7 (3.0V vs. 2.6V). Both values remain within standard gate drive voltage ranges (±20V maximum). Gate drive circuits designed for the original device operate correctly with the substitute part.

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