CPH6001A-TL-E Equivalent & Substitute Parts

Part Overview

The CPH6001A-TL-E is an RF Transistor NPN manufactured by onsemi, designed for high-frequency applications operating at 6.7GHz with a maximum collector-emitter breakdown voltage of 12V and maximum power dissipation of 800mW. The device is housed in a SOT-23-6 surface mount package and maintains Active product status with full RoHS3 compliance.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified operating parameters while maintaining compatibility with surface mount assembly processes and thermal requirements.

Substiute Parts

CPH6001A-TL-E
onsemiIn Stock: 17326CPH6001A-TL-E Datasheet
CPH6001A-TL-E
Current Part
BFP183WH6327XTSA1
Infineon TechnologiesIn Stock: 15329BFP183WH6327XTSA1 Datasheet
BFP183WH6327XTSA1
Similar
BFR360FH6327XTSA1
Infineon TechnologiesIn Stock: 185236BFR360FH6327XTSA1 Datasheet
BFR360FH6327XTSA1
Similar

Key Parameters

Parameter CPH6001A-TL-E
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 6.7GHz
Power - Max 800mW
Current - Collector (Ic) (Max) 100mA
Mounting Type Surface Mount
Operating Temperature 150°C (TJ)
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution eligibility for the CPH6001A-TL-E is determined by the following critical parameters:

Primary Substitution Criteria:

  • Transistor Type: NPN configuration required
  • Voltage - Collector Emitter Breakdown (Max): Minimum 12V
  • Mounting Type: Surface Mount
  • Operating Temperature: 150°C (TJ) maximum junction temperature
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level: MSL 1 (Unlimited)

Secondary Performance Parameters:

  • Frequency - Transition: 6.7GHz or higher
  • Power - Max: 800mW or higher
  • Current - Collector (Ic) (Max): 100mA or higher

The identified substitute parts meet the primary substitution criteria. Variations in secondary performance parameters reflect different application optimization profiles within the RF transistor category.

Parameter Comparison

Parameter CPH6001A-TL-E (onsemi) BFP183WH6327XTSA1 (Infineon) BFR360FH6327XTSA1 (Infineon)
Transistor Type NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 12V 12V 9V
Frequency - Transition 6.7GHz 8.5GHz 14GHz
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz 1dB @ 1.8GHz
Gain 11dB 22dB 15.5dB
Power - Max 800mW 450mW 210mW
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 30mA, 5V 70 @ 15mA, 8V 90 @ 15mA, 3V
Current - Collector (Ic) (Max) 100mA 65mA 35mA
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6 SC-82A, SOT-343 SOT-723
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

CPH6001A-TL-E (onsemi): Primary selection for applications requiring 12V collector-emitter breakdown voltage with 800mW power dissipation capability and 100mA maximum collector current. Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

BFP183WH6327XTSA1 (Infineon): Suitable for applications where 12V collector-emitter breakdown voltage is required with higher frequency capability (8.5GHz) and improved noise figure (0.9dB ~ 1.4dB). Maximum collector current limited to 65mA and power dissipation to 450mW. Requires PCB layout accommodation for SOT-343 package versus SOT-23-6. Active product status with full RoHS3 compliance.

BFR360FH6327XTSA1 (Infineon): Applicable for high-frequency applications operating at 14GHz where collector-emitter breakdown voltage of 9V is acceptable. Maximum collector current limited to 35mA and power dissipation to 210mW. Smallest package footprint (SOT-723) with highest frequency capability. Active product status with full RoHS3 compliance.

All substitute parts maintain Active product status, ROHS3 compliance, and MSL 1 (Unlimited) rating consistent with the main part.

Frequently Asked Questions (FAQ)

Q: Can BFR360FH6327XTSA1 be used as a direct replacement for CPH6001A-TL-E?

A: BFR360FH6327XTSA1 is not a direct replacement due to reduced collector-emitter breakdown voltage (9V versus 12V) and significantly lower maximum collector current (35mA versus 100mA) and power dissipation (210mW versus 800mW). Application-specific voltage and current requirements must be evaluated before substitution.

Q: What are the package compatibility considerations?

A: CPH6001A-TL-E uses SOT-23-6 package, BFP183WH6327XTSA1 uses SOT-343, and BFR360FH6327XTSA1 uses SOT-723. Different package geometries require PCB layout modifications including pad dimensions, trace routing, and thermal management provisions.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. CPH6001A-TL-E, BFP183WH6327XTSA1, and BFR360FH6327XTSA1 are all ROHS3 Compliant with MSL 1 (Unlimited) moisture sensitivity rating.

Q: Which substitute part offers the best noise figure performance?

A: BFP183WH6327XTSA1 provides the lowest noise figure specification at 0.9dB minimum across the 900MHz to 1.8GHz frequency range, compared to CPH6001A-TL-E at 1.1dB @ 1GHz and BFR360FH6327XTSA1 at 1dB @ 1.8GHz.

Q: What is the frequency capability difference between substitute parts?

A: CPH6001A-TL-E operates at 6.7GHz transition frequency, BFP183WH6327XTSA1 at 8.5GHz, and BFR360FH6327XTSA1 at 14GHz. Higher frequency capability in substitute parts reflects different circuit optimization for specific RF applications.

Q: Are there current or power limitations when substituting parts?

A: Yes. BFP183WH6327XTSA1 maximum collector current is 65mA (versus 100mA) with 450mW power dissipation (versus 800mW). BFR360FH6327XTSA1 maximum collector current is 35mA with 210mW power dissipation. Applications requiring the full 100mA current or 800mW power handling of CPH6001A-TL-E cannot use these substitutes.

Request Quote (Ships tomorrow)