CPH5871-TL-W N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The CPH5871-TL-W is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with 3.5A continuous drain current at 25°C. This device features an isolated Schottky diode and is housed in a 5-CPH (SC-74A, SOT-753) surface mount package. The part is classified as obsolete, necessitating identification of active equivalent components for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, and thermal characteristics while accommodating packaging and availability constraints.

Substiute Parts

CPH5871-TL-W
onsemiIn Stock: 3486CPH5871-TL-W Datasheet
CPH5871-TL-W
Current Part
NTLJF4156NT1G
onsemiIn Stock: 23412NTLJF4156NT1G Datasheet
NTLJF4156NT1G
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Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 3.5 A (Ta)
Rds On (Max) @ Id, Vgs 52 mOhm @ 2A, 4.5V
Power Dissipation (Max) 900 mW (Ta)
Gate Charge (Qg) (Max) @ Vgs 4.7 nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 430 pF @ 10V
Operating Temperature Range -55 to 125 °C (TJ)
FET Feature Schottky Diode (Isolated)
Mounting Type Surface Mount
Package / Case SC-74A, SOT-753
Product Status Obsolete

Substitute Part Grouping Explanation

Substitute parts for the CPH5871-TL-W are identified based on strict electrical and mechanical compatibility criteria. The primary substitution logic is governed by the following parameters:

Electrical Compatibility Requirements:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
  • FET Type: Must be N-Channel
  • Technology: Must be MOSFET (Metal Oxide)
  • FET Feature: Must include Schottky Diode (Isolated)
  • Mounting Type: Must be Surface Mount

Current and Power Handling:

  • Continuous Drain Current (Id): Substitute must support minimum 3.5A or provide equivalent thermal performance
  • Power Dissipation: Substitute must support minimum 900mW thermal envelope
  • On-Resistance (Rds On): Lower or equivalent values ensure functional compatibility

Thermal and Environmental:

  • Operating Temperature Range: Substitute must cover or exceed -55°C to 125°C
  • Moisture Sensitivity Level: MSL 1 (Unlimited) preferred for supply chain flexibility

Packaging Considerations:

  • Surface mount packages (5-CPH, 6-WDFN) are interchangeable in board-level applications with layout modifications
  • Package footprint differences require PCB redesign but do not affect electrical function

The NTLJF4156NT1G meets these criteria as an active product with equivalent voltage rating, isolated Schottky diode, and surface mount configuration, though with reduced current rating and modified package geometry.

Parameter Comparison

Parameter CPH5871-TL-W NTLJF4156NT1G Unit
Manufacturer onsemi onsemi
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 30 V
Current - Continuous Drain (Id) @ 25°C 3.5 (Ta) 2.5 (Tj) A
Rds On (Max) @ Id, Vgs 52 @ 2A, 4.5V 70 @ 2A, 4.5V mOhm
Gate Charge (Qg) (Max) @ Vgs 4.7 @ 4.5V 6.5 @ 4.5V nC
Input Capacitance (Ciss) (Max) @ Vds 430 @ 10V 427 @ 15V pF
Power Dissipation (Max) 900 (Ta) 710 (Ta) mW
Operating Temperature Range -55 to 125 (TJ) -55 to 150 (TJ) °C
FET Feature Schottky Diode (Isolated) Schottky Diode (Isolated)
Mounting Type Surface Mount Surface Mount
Package / Case SC-74A, SOT-753 6-WDFN Exposed Pad
Product Status Obsolete Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected
ECCN EAR99 EAR99

Engineering Selection Recommendations

Product Status Consideration: The CPH5871-TL-W is classified as obsolete. The NTLJF4156NT1G is an active product from the same manufacturer (onsemi), ensuring continued availability, manufacturing support, and compliance with current regulatory standards.

Compliance and Certifications: Both parts maintain identical REACH status (REACH Unaffected) and ECCN classification (EAR99), ensuring no regulatory barriers to substitution. The NTLJF4156NT1G carries RoHS3 compliance, meeting modern environmental standards required for new production.

Electrical Equivalence: Both devices operate at 30V Vdss with isolated Schottky diodes. The NTLJF4156NT1G exhibits slightly higher on-resistance (70 mOhm vs. 52 mOhm) and reduced continuous drain current (2.5A vs. 3.5A). These differences are acceptable in applications where the 2.5A rating satisfies circuit requirements. Applications requiring the full 3.5A continuous current must evaluate thermal and current-handling margins independently.

Thermal Performance: The NTLJF4156NT1G supports an extended operating temperature range (-55°C to 150°C vs. -55°C to 125°C), providing additional thermal margin. However, maximum power dissipation is reduced (710 mW vs. 900 mW), requiring thermal design review for high-power applications.

Package Transition: The shift from 5-CPH (SC-74A, SOT-753) to 6-WDFN (2x2) requires PCB layout modification. The 6-WDFN package includes an exposed pad for enhanced thermal dissipation, potentially offsetting the reduced power rating in thermally constrained designs.

Frequently Asked Questions (FAQ)

Q: Can the NTLJF4156NT1G directly replace the CPH5871-TL-W without circuit modification?

A: Electrical substitution is valid for applications operating at or below 2.5A continuous drain current. The 30V Vdss rating, isolated Schottky diode, and gate drive characteristics are equivalent. However, PCB layout modification is required due to package geometry differences (5-CPH vs. 6-WDFN).

Q: What is the impact of the reduced continuous drain current (2.5A vs. 3.5A)?

A: Applications designed for 3.5A operation must be re-evaluated. If circuit operation requires less than 2.5A, substitution is straightforward. If 3.5A is mandatory, alternative parts with higher current ratings must be sourced, or thermal management must be enhanced to operate within the 2.5A limit with acceptable junction temperatures.

Q: Does the higher on-resistance (70 mOhm vs. 52 mOhm) affect circuit performance?

A: On-resistance differences result in increased conduction losses. For low-frequency switching or linear applications, this impact is typically negligible. For high-frequency switching applications, power dissipation increases proportionally to switching frequency and current. Thermal analysis is required to confirm acceptable junction temperatures.

Q: Why is the package different, and what does this mean for design?

A: The NTLJF4156NT1G uses a 6-WDFN package with an exposed thermal pad, providing superior heat dissipation compared to the 5-CPH package. This package change requires PCB footprint redesign but offers thermal advantages. The 6-WDFN package is a standard surface mount format with established manufacturing processes.

Q: Are there any compliance or supply chain advantages to using the NTLJF4156NT1G?

A: The NTLJF4156NT1G is an active product with RoHS3 compliance and unlimited moisture sensitivity level (MSL 1), ensuring long-term availability and compatibility with modern manufacturing standards. The obsolete status of the CPH5871-TL-W creates supply risk and potential manufacturing discontinuation.

Q: What gate drive voltage is required for the NTLJF4156NT1G?

A: The NTLJF4156NT1G supports ±8V maximum gate-source voltage, compared to ±12V for the CPH5871-TL-W. Existing gate drive circuits rated for ±12V operation remain compatible, as ±8V is within this envelope. Gate charge is slightly higher (6.5 nC vs. 4.7 nC), requiring minimal adjustment to gate drive timing in high-frequency applications.

Q: Can both parts be used interchangeably in existing inventory?

A: No. The CPH5871-TL-W is obsolete and should be consumed from existing stock. New designs and production should transition to the NTLJF4156NT1G. Mixed-generation designs create supply chain complexity and should be avoided.

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