CPH3455-TL-W N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The CPH3455-TL-W is an N-Channel MOSFET manufactured by onsemi, rated for 35V drain-to-source voltage with 3A continuous drain current at 25°C. This device is packaged in a surface-mount TO-236-3 (SOT-23-3) configuration and is designed for general-purpose switching applications requiring compact form factors.

The CPH3455-TL-W is classified as obsolete. Locating equivalent or substitute components is necessary to support ongoing production requirements, maintenance operations, and design continuity for systems currently utilizing this part.

Substiute Parts

CPH3455-TL-W

onsemiIn Stock: 6285CPH3455-TL-W Datasheet

Current PartRFQ

SI2392ADS-T1-GE3

Vishay SiliconixIn Stock: 69096SI2392ADS-T1-GE3 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the CPH3455-TL-W is determined by the following critical parameters:

Mandatory Compatibility Criteria:

• FET Type: N-Channel topology
• Package / Case: TO-236-3 / SOT-23-3 surface-mount configuration
• Drain-to-Source Voltage (Vdss): Equal to or greater than 35V
• Continuous Drain Current (Id): Equal to or greater than 3A at 25°C
• Gate Voltage Range (Vgs Max): ±20V or greater
• Mounting Type: Surface Mount

Performance Parameters:

• On-Resistance (Rds On): Lower or equivalent values ensure comparable switching performance
• Gate Charge (Qg): Lower values reduce gate drive requirements
• Input Capacitance (Ciss): Lower values improve switching speed
• Power Dissipation: Equal to or greater than 1W (Ta) rating

The SI2392ADS-T1-GE3 meets all mandatory compatibility criteria. This Vishay Siliconix device exceeds the voltage rating (100V vs. 35V), maintains equivalent current capability (3.1A vs. 3A), and is packaged identically in SOT-23-3 configuration. The substitute part is active in production status, ensuring long-term availability.

Parameter Comparison

Engineering Selection Recommendations

SI2392ADS-T1-GE3 as Primary Substitute:

The SI2392ADS-T1-GE3 is the qualified substitute for the CPH3455-TL-W based on the following engineering factors:

1. Product Status: The SI2392ADS-T1-GE3 is classified as Active, ensuring continued manufacturing availability and supply chain stability. The CPH3455-TL-W is obsolete, making substitution necessary for ongoing production support.

2. Regulatory Compliance: Both parts maintain identical REACH and ECCN classifications (REACH Unaffected, EAR99), ensuring no regulatory barriers to substitution.

3. Package Compatibility: Both devices use identical TO-236-3 / SOT-23-3 surface-mount packaging, enabling direct board-level replacement without layout modifications.

4. Electrical Performance: The SI2392ADS-T1-GE3 exceeds the voltage rating specification (100V vs. 35V), providing enhanced design margin. Current capability is equivalent (3.1A vs. 3A). Gate voltage range is identical (±20V).

5. Thermal Characteristics: The SI2392ADS-T1-GE3 provides superior power dissipation capability (1.25W at Ta, 2.5W at Tc) compared to the CPH3455-TL-W (1W at Ta), supporting higher thermal stress applications.

6. Moisture Sensitivity: Both parts share MSL 1 (Unlimited) classification, indicating identical moisture handling requirements.

The SI2392ADS-T1-GE3 is suitable for direct substitution in applications where the CPH3455-TL-W was previously specified.

Frequently Asked Questions (FAQ)

Q: Can the SI2392ADS-T1-GE3 be used as a direct replacement for the CPH3455-TL-W?

A: Yes. Both devices are N-Channel MOSFETs in identical TO-236-3 / SOT-23-3 surface-mount packages. The SI2392ADS-T1-GE3 meets or exceeds all electrical specifications of the CPH3455-TL-W, including voltage rating, current capability, and gate voltage range. No circuit modifications are required for substitution.

Q: What are the key differences between these two parts?

A: The SI2392ADS-T1-GE3 has a higher drain-to-source voltage rating (100V vs. 35V), slightly higher on-resistance (126 mOhm vs. 104 mOhm), higher gate charge (10.4 nC vs. 4 nC), and superior power dissipation capability (1.25W/2.5W vs. 1W). The SI2392ADS-T1-GE3 is active in production; the CPH3455-TL-W is obsolete.

Q: Will the higher gate charge of the SI2392ADS-T1-GE3 affect circuit performance?

A: Gate charge affects gate drive requirements and switching speed. The SI2392ADS-T1-GE3 has higher gate charge (10.4 nC vs. 4 nC), which may require slightly higher gate drive current or longer switching times. Circuit-level evaluation is necessary to confirm compatibility with existing gate drive circuitry.

Q: Are there any supply chain advantages to using the SI2392ADS-T1-GE3?

A: Yes. The SI2392ADS-T1-GE3 is an active product with 69,013 pieces in stock, compared to the CPH3455-TL-W, which is obsolete. The substitute part offers superior long-term availability and supply stability.

Q: Do both parts have the same moisture sensitivity requirements?

A: Yes. Both the CPH3455-TL-W and SI2392ADS-T1-GE3 are classified as MSL 1 (Unlimited), indicating identical moisture sensitivity levels and handling requirements.

Q: What is the operating temperature range for each part?

A: The CPH3455-TL-W operates to a maximum junction temperature of 150°C. The SI2392ADS-T1-GE3 operates across a wider range from -55°C to 150°C (TJ), providing enhanced low-temperature performance capability.

Q: Are regulatory certifications identical between the two parts?

A: Yes. Both parts share identical REACH Status (REACH Unaffected) and ECCN classification (EAR99), ensuring no regulatory barriers to substitution.