CPH3356-TL-W Equivalent & Substitute Parts

Part Overview

The CPH3356-TL-W is a P-Channel MOSFET manufactured by onsemi, rated for 20V drain-to-source voltage with 2.5A continuous drain current at 25°C. The device is housed in a 3-CPH (SOT-23-3) surface mount package and dissipates 1W maximum power. This part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, production continuity, and system maintenance.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	20	V
Continuous Drain Current (Id) @ 25°C	2.5	A
Rds On (Max) @ Id, Vgs	137 mOhm @ 1A, 4.5V	—
Gate Threshold Voltage (Vgs(th)) @ Id	1.4	V @ 1mA
Power Dissipation (Max)	1	W
Operating Temperature (TJ)	150	°C
Package / Case	TO-236-3, SC-59, SOT-23-3	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the CPH3356-TL-W is determined by the following critical parameters:

Electrical Compatibility Criteria:

FET Type: P-Channel topology must be maintained
Drain to Source Voltage (Vdss): Minimum 20V rating required
Continuous Drain Current (Id): Minimum 2.4A at 25°C acceptable
On-State Resistance (Rds On): Lower values improve performance; values up to 137 mOhm at rated conditions are acceptable
Gate Threshold Voltage (Vgs(th)): Range 1.4V to 1.5V @ specified current
Power Dissipation: Minimum 500mW; 1W or higher preferred for thermal margin

Package and Mechanical Compatibility:

Package Type: SOT-23-3 (TO-236-3, SC-59) surface mount only
Mounting: Surface mount technology required

Regulatory and Compliance:

RoHS3 Compliance: Required
Moisture Sensitivity Level (MSL): Level 1 (Unlimited) acceptable

Substitute parts must satisfy all electrical parameters within the specified ranges and maintain identical package and mounting specifications.

Parameter Comparison

Parameter	CPH3356-TL-W (Main)	FDN304PZ (Substitute)	SQ2351ES-T1_GE3 (Substitute)
Manufacturer	onsemi	onsemi	Vishay Siliconix
FET Type	P-Channel	P-Channel	P-Channel
Vdss	20 V	20 V	20 V
Id @ 25°C	2.5 A	2.4 A	3.2 A
Rds On (Max)	137 mOhm @ 1A, 4.5V	52 mOhm @ 2.4A, 4.5V	115 mOhm @ 2.4A, 4.5V
Vgs(th) (Max)	1.4 V @ 1mA	1.5 V @ 250µA	1.5 V @ 250µA
Gate Charge (Qg) @ 4.5V	3.3 nC	20 nC	5.5 nC
Input Capacitance (Ciss) @ 10V	250 pF	1310 pF	330 pF
Power Dissipation (Max)	1 W	500 mW	2 W
Operating Temperature (TJ)	150 °C	-55 to 150 °C	-55 to 175 °C
Package	SOT-23-3	SOT-23-3	SOT-23-3
Product Status	Obsolete	Active	Obsolete
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

FDN304PZ (onsemi) – Recommended Primary Substitute

The FDN304PZ is the manufacturer-recommended equivalent for the CPH3356-TL-W. This part maintains identical voltage rating (20V Vdss) and meets the minimum current requirement (2.4A vs. 2.5A). The FDN304PZ offers superior on-state resistance performance (52 mOhm vs. 137 mOhm), resulting in lower power dissipation and improved thermal efficiency. The device is currently in active production status, ensuring long-term availability and supply chain stability. RoHS3 compliance and MSL Level 1 rating match the original specification. The FDN304PZ is part of the PowerTrench® series and is supplied in SOT-23-3 package format identical to the CPH3356-TL-W.

SQ2351ES-T1_GE3 (Vishay Siliconix) – Alternative Substitute

The SQ2351ES-T1_GE3 provides higher current capability (3.2A) and superior power dissipation rating (2W vs. 1W), offering additional thermal margin for demanding applications. This device features an extended operating temperature range (-55°C to 175°C) compared to the original part (150°C maximum). The SQ2351ES-T1_GE3 is AEC-Q101 qualified and carries automotive-grade designation, suitable for applications requiring automotive-level reliability. However, this part is classified as obsolete. The on-state resistance (115 mOhm @ 2.4A, 4.5V) is lower than the original specification, and the input capacitance (330 pF) is higher than the CPH3356-TL-W (250 pF), which may affect switching characteristics in high-frequency applications. RoHS3 compliance and SOT-23-3 package compatibility are maintained.

Selection Criteria Summary:

For direct replacement with improved performance and active product status, select FDN304PZ. For applications requiring higher current capacity, extended temperature range, or automotive qualification, evaluate SQ2351ES-T1_GE3 with consideration of its obsolete status and higher input capacitance characteristics.

Frequently Asked Questions (FAQ)

Q: Can the FDN304PZ directly replace the CPH3356-TL-W without circuit modification?

A: Yes. The FDN304PZ maintains identical voltage rating (20V), meets minimum current specification (2.4A vs. 2.5A), and is housed in the same SOT-23-3 package. Pin configuration and electrical polarity are identical. The lower on-state resistance of the FDN304PZ results in improved performance without requiring circuit changes.

Q: What is the primary difference between the FDN304PZ and SQ2351ES-T1_GE3?

A: The FDN304PZ is the manufacturer-recommended substitute with active product status and optimized on-state resistance (52 mOhm). The SQ2351ES-T1_GE3 offers higher current rating (3.2A vs. 2.4A), greater power dissipation capability (2W vs. 500mW), and extended temperature range (-55°C to 175°C vs. -55°C to 150°C), but is classified as obsolete. The SQ2351ES-T1_GE3 also exhibits higher input capacitance (330 pF vs. 250 pF), which may impact switching speed in high-frequency circuits.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. Both the FDN304PZ and SQ2351ES-T1_GE3 are RoHS3 compliant and carry MSL Level 1 (Unlimited) moisture sensitivity rating, matching the original CPH3356-TL-W specification.

Q: Why is the gate charge specification different between the CPH3356-TL-W and FDN304PZ?

A: Gate charge (Qg) is a device-specific parameter dependent on internal capacitance and switching characteristics. The CPH3356-TL-W specifies 3.3 nC @ 4.5V, while the FDN304PZ specifies 20 nC @ 4.5V. This difference reflects different internal device architecture and does not prevent functional substitution. Higher gate charge may require slightly increased gate drive current but does not affect DC operating point or steady-state performance.

Q: Is the SQ2351ES-T1_GE3 suitable for new designs?

A: The SQ2351ES-T1_GE3 is classified as obsolete. For new designs, the FDN304PZ is the recommended choice due to active production status and guaranteed long-term availability. The SQ2351ES-T1_GE3 may be considered only for legacy system maintenance or applications where automotive qualification is mandatory and supply can be secured.

Q: What is the impact of higher input capacitance in the FDN304PZ?

A: The FDN304PZ exhibits higher input capacitance (Ciss) at 1310 pF @ 10V compared to the CPH3356-TL-W at 250 pF @ 10V. This increases gate charge requirements and may slightly reduce switching speed in high-frequency applications. For applications operating below 1 MHz, this difference is typically negligible. High-frequency designs (>10 MHz) should verify gate drive capability and switching losses with the FDN304PZ datasheet.

Q: Can the CPH3356-TL-W be used in place of the FDN304PZ?

A: No. The CPH3356-TL-W is obsolete and no longer in production. Substitution direction is from obsolete to active parts only. The FDN304PZ is the forward-compatible replacement.

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