CPH3355-TL-W Equivalent & Substitute Parts

Part Overview

The CPH3355-TL-W is a P-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with 2.5A continuous drain current at 25°C. This device is packaged in a 3-CPH (SOT-23-3) surface mount configuration and is designed for general-purpose switching applications requiring low on-resistance performance.

The CPH3355-TL-W carries an Obsolete product status. Locating equivalent and substitute components is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this part.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	30	V
Current - Continuous Drain (Id) @ 25°C	2.5	A
Rds On (Max) @ Id, Vgs	156 mOhm @ 1A, 10V	—
Vgs(th) (Max) @ Id	2.6	V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	3.9	nC @ 10V
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	172	pF @ 10V
Power Dissipation (Max)	1	W
Operating Temperature (TJ)	150	°C
Package / Case	TO-236-3, SC-59, SOT-23-3	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the CPH3355-TL-W is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

FET Type: P-Channel topology must be maintained
Drain to Source Voltage (Vdss): Minimum 30V rating required
Continuous Drain Current (Id): Minimum 2.5A at 25°C required
Gate-Source Voltage (Vgs): Maximum ±20V rating required
On-Resistance (Rds On): Lower values indicate improved performance; values at or below 156 mOhm @ specified conditions are acceptable
Threshold Voltage (Vgs(th)): Values at or below 2.6V @ 1mA are acceptable
Power Dissipation: Minimum 1W rating required

Mechanical Compatibility Criteria:

Package / Case: SOT-23-3 (TO-236-3, SC-59) surface mount configuration
Mounting Type: Surface mount only
Moisture Sensitivity Level: MSL 1 (Unlimited) preferred for handling consistency

Compliance Criteria:

RoHS3 Compliance: Required
REACH Status: Unaffected status required

Two substitute parts meet these criteria and are presented below.

Parameter Comparison

Parameter	CPH3355-TL-W (Main)	FDN360P (Substitute)	PJA3409-AU_R1_000A1 (Substitute)
Manufacturer	onsemi	onsemi	Panjit International Inc.
FET Type	P-Channel	P-Channel	P-Channel
Drain to Source Voltage (Vdss)	30 V	30 V	30 V
Current - Continuous Drain (Id) @ 25°C	2.5 A	2 A	2.9 A
Rds On (Max) @ Id, Vgs	156 mOhm @ 1A, 10V	80 mOhm @ 2A, 10V	110 mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id	2.6 V @ 1mA	3 V @ 250µA	2.1 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	3.9 nC @ 10V	9 nC @ 10V	9.8 nC @ 10V
Vgs (Max)	±20 V	±20 V	±20 V
Input Capacitance (Ciss) (Max) @ Vds	172 pF @ 10V	298 pF @ 15V	396 pF @ 15V
Power Dissipation (Max)	1 W	500 mW	1.25 W
Operating Temperature (TJ)	150 °C	-55 to 150 °C	-55 to 150 °C
Package / Case	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Product Status	Obsolete	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

FDN360P (onsemi)

The FDN360P is an active-status P-Channel MOSFET from onsemi, the original manufacturer of the CPH3355-TL-W. This part maintains identical voltage ratings (30V Vdss) and is packaged in the same SOT-23-3 surface mount configuration. The FDN360P delivers superior on-resistance performance (80 mOhm @ 2A, 10V versus 156 mOhm @ 1A, 10V), resulting in lower power dissipation and improved thermal efficiency.

The primary design consideration is that the FDN360P is rated for 2A continuous drain current, which is 0.5A lower than the CPH3355-TL-W specification. Applications requiring the full 2.5A continuous current capability must evaluate whether the 2A rating is sufficient for the intended use case. The FDN360P carries ROHS3 compliance, MSL 1 rating, and active product status, ensuring long-term availability and supply chain stability.

PJA3409-AU_R1_000A1 (Panjit International Inc.)

The PJA3409-AU_R1_000A1 is an active-status P-Channel MOSFET from Panjit International Inc., qualified to AEC-Q101 automotive standards. This part exceeds the CPH3355-TL-W specifications in continuous drain current (2.9A versus 2.5A) and power dissipation (1.25W versus 1W), providing additional design margin. The on-resistance is 110 mOhm @ 2.9A, 10V, representing a favorable trade-off between performance and current capability.

The PJA3409-AU_R1_000A1 is packaged in SOT-23-3 surface mount configuration and carries ROHS3 compliance, MSL 1 rating, and active product status. The automotive qualification (AEC-Q101) indicates suitability for applications requiring enhanced reliability and traceability. This part is recommended for applications where current capacity exceeding 2.5A or automotive-grade qualification is required.

Selection Summary

Both substitute parts are electrically and mechanically compatible with the CPH3355-TL-W. The FDN360P offers improved efficiency within a 2A current envelope. The PJA3409-AU_R1_000A1 provides higher current capacity and automotive qualification. Selection depends on application current requirements and qualification standards.

Frequently Asked Questions (FAQ)

Q: Can the FDN360P directly replace the CPH3355-TL-W in all applications?

A: The FDN360P is electrically and mechanically compatible with the CPH3355-TL-W in SOT-23-3 surface mount applications. However, the FDN360P is rated for 2A continuous drain current, compared to the CPH3355-TL-W rating of 2.5A. Applications operating at continuous currents between 2A and 2.5A must be evaluated to determine if the lower rating is acceptable for the specific use case.

Q: What is the difference between the FDN360P and PJA3409-AU_R1_000A1?

A: Both parts are P-Channel MOSFETs in SOT-23-3 packages with 30V Vdss ratings. The FDN360P (onsemi) is rated for 2A continuous current with 500mW power dissipation. The PJA3409-AU_R1_000A1 (Panjit) is rated for 2.9A continuous current with 1.25W power dissipation and carries AEC-Q101 automotive qualification. The PJA3409-AU_R1_000A1 provides higher current capacity and automotive-grade reliability.

Q: Are both substitute parts available in the same packaging as the CPH3355-TL-W?

A: Yes. Both the FDN360P and PJA3409-AU_R1_000A1 are packaged in SOT-23-3 (TO-236-3, SC-59) surface mount configuration, identical to the CPH3355-TL-W. Both parts are MSL 1 (Unlimited), requiring no special moisture handling during storage or assembly.

Q: Do the substitute parts meet RoHS3 compliance?

A: Yes. Both the FDN360P and PJA3409-AU_R1_000A1 are ROHS3 compliant and REACH unaffected, matching the compliance profile of the CPH3355-TL-W.

Q: Why is the CPH3355-TL-W marked as Obsolete?

A: The CPH3355-TL-W carries an Obsolete product status, indicating that onsemi has discontinued active production and support for this part. The FDN360P and PJA3409-AU_R1_000A1 are both active-status parts with ongoing manufacturer support and supply availability.

Q: What is the impact of higher gate charge in the substitute parts?

A: The FDN360P and PJA3409-AU_R1_000A1 have higher gate charge values (9 nC and 9.8 nC respectively) compared to the CPH3355-TL-W (3.9 nC). Higher gate charge requires more energy to switch the transistor on and off, which may increase switching losses in high-frequency applications. Applications operating at low switching frequencies are not significantly affected by this difference.

Q: Can I use the PJA3409-AU_R1_000A1 in non-automotive applications?

A: Yes. The PJA3409-AU_R1_000A1 is qualified to AEC-Q101 automotive standards, but this qualification does not restrict its use in non-automotive applications. The part is electrically and mechanically compatible with the CPH3355-TL-W and suitable for general-purpose switching applications.

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