CPH3355-TL-H P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The CPH3355-TL-H is a P-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with 2.5A continuous drain current at 25°C. The device is housed in a 3-CPH (TO-236-3/SOT-23-3) surface mount package and dissipates 1W maximum power. This part is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing production and design requirements. Substitute parts must maintain compatibility across electrical ratings, package form factor, and thermal characteristics to ensure direct replacement capability.

Key Parameters

Parameter	CPH3355-TL-H	Unit
FET Type	P-Channel	—
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	2.5	A (Ta)
On-Resistance (Rds On) @ 1A, 10V	156	mOhm
Gate-Source Threshold Voltage (Vgs(th)) @ 1mA	2.6	V
Gate Charge (Qg) @ 10V	3.9	nC
Input Capacitance (Ciss) @ 10V	172	pF
Power Dissipation (Max)	1	W (Ta)
Operating Temperature (TJ)	150	°C
Package / Case	TO-236-3 / SOT-23-3	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution eligibility for the CPH3355-TL-H is determined by the following critical parameters:

Primary Substitution Criteria:

FET Type: P-Channel (required)
Drain-to-Source Voltage (Vdss): 30V minimum (CPH3355-TL-H rated at 30V; substitutes rated at 30V or higher are acceptable)
Continuous Drain Current (Id): 2.5A or greater at 25°C
Package / Case: TO-236-3 / SOT-23-3 surface mount (physical and electrical compatibility)
Gate-Source Voltage (Vgs): ±20V maximum (standard for this class)

Secondary Compatibility Parameters:

On-Resistance (Rds On): Lower values indicate improved performance; values within 20% variance are functionally compatible
Gate Charge (Qg): Lower values reduce switching losses; variance acceptable within application-specific requirements
Input Capacitance (Ciss): Affects switching speed; higher values acceptable if gate drive capability is sufficient
Power Dissipation: Minimum 1W at Ta; higher ratings provide thermal margin
Operating Temperature: Minimum 150°C junction temperature required

Substitute parts SI2303CDS-T1-GE3, AO3409, and SQ2303ES-T1_GE3 meet all primary criteria with 30V Vdss ratings and drain currents of 2.5A or greater. PMV250EPEAR is rated at 40V Vdss with 1.5A drain current; the higher voltage rating provides design margin, though the lower current rating requires application-level verification.

Parameter Comparison

Parameter	CPH3355-TL-H (onsemi)	SI2303CDS-T1-GE3 (Vishay)	AO3409 (Alpha & Omega)	PMV250EPEAR (Nexperia)	SQ2303ES-T1_GE3 (Vishay)	Unit
FET Type	P-Channel	P-Channel	P-Channel	P-Channel	P-Channel	—
Vdss	30	30	30	40	30	V
Id @ 25°C	2.5 (Ta)	2.7 (Tc)	2.6 (Ta)	1.5 (Ta)	2.5 (Tc)	A
Rds On @ 10V	156 @ 1A	190 @ 1.9A	130 @ 2.6A	240 @ 1.3A	170 @ 1.8A	mOhm
Vgs(th)	2.6 @ 1mA	3 @ 250µA	3 @ 250µA	2.5 @ 250µA	2.5 @ 250µA	V
Qg @ 10V	3.9	8	9	6	6.8	nC
Ciss @ Vds	172 @ 10V	155 @ 15V	370 @ 15V	450 @ 20V	210 @ 25V	pF
Power Dissipation (Max)	1 (Ta)	1 (Ta) / 2.3 (Tc)	1.4 (Ta)	0.48 (Ta) / 6.25 (Tc)	1.9 (Tc)	W
Operating Temperature (TJ)	150	-55 to 150	-55 to 150	-55 to 150	-55 to 175	°C
Package	TO-236-3 / SOT-23-3	TO-236-3 / SOT-23-3	SOT-23-3	TO-236-3 / SOT-23-3	TO-236-3 / SOT-23-3	—
Product Status	Obsolete	Active	Not For New Designs	Active	Active	—
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

Recommended Primary Substitutes:

SI2303CDS-T1-GE3 (Vishay Siliconix) — This part is the preferred direct replacement for the CPH3355-TL-H. It maintains 30V Vdss rating with 2.7A continuous drain current, exceeding the original specification. The device is classified as Active with ROHS3 compliance and carries the TrenchFET® series designation. Operating temperature range extends to -55°C to 150°C, providing thermal margin. Gate charge of 8 nC is slightly elevated compared to the original 3.9 nC, but remains within acceptable switching loss parameters for most applications. On-resistance of 190 mOhm at 1.9A, 10V is comparable to the original specification.

SQ2303ES-T1_GE3 (Vishay Siliconix) — This alternative maintains exact 30V Vdss and 2.5A drain current specifications. The device is Active with ROHS3 compliance and AEC-Q101 automotive qualification. Operating temperature extends to -55°C to 175°C, providing superior thermal performance. On-resistance of 170 mOhm at 1.8A, 10V is lower than the original, indicating improved efficiency. Gate charge of 6.8 nC is moderately elevated. This part is suitable for applications requiring automotive-grade reliability.

AO3409 (Alpha & Omega Semiconductor) — This part meets 30V Vdss and 2.6A drain current requirements with ROHS3 compliance. Product status is classified as Not For New Designs, limiting suitability for new development. On-resistance of 130 mOhm at 2.6A, 10V is superior to the original specification. Input capacitance of 370 pF is significantly elevated, which may impact gate drive requirements in high-frequency switching applications.

Secondary Substitute:

PMV250EPEAR (Nexperia USA) — This part is rated at 40V Vdss with 1.5A continuous drain current. The higher voltage rating provides design margin for transient overvoltage conditions. However, the 1.5A current rating is below the original 2.5A specification and requires application-level verification to confirm adequate current capacity. The device is Active with ROHS3 compliance and carries AEC-Q100 automotive qualification. Operating temperature extends to -55°C to 150°C. Power dissipation at case temperature (Tc) is 6.25W, providing significant thermal capability. This part is suitable only for applications where the reduced current rating is acceptable.

Frequently Asked Questions (FAQ)

Q: Can SI2303CDS-T1-GE3 directly replace CPH3355-TL-H without circuit modification?

A: Yes. SI2303CDS-T1-GE3 maintains the same 30V Vdss rating, exceeds the 2.5A drain current requirement with 2.7A, and is packaged in identical TO-236-3 / SOT-23-3 form factor. Pin configuration and electrical interface are compatible. Gate charge elevation from 3.9 nC to 8 nC may require gate drive circuit verification in applications with marginal drive capability, but does not preclude direct substitution in standard designs.

Q: What is the significance of the "Not For New Designs" status on AO3409?

A: This designation indicates the manufacturer has discontinued active development and support for this part. While AO3409 meets electrical and package specifications for substitution, it is not recommended for new product designs due to potential future availability constraints and lack of manufacturer support. Existing designs currently using AO3409 may continue operation, but new designs should select from Active-status alternatives such as SI2303CDS-T1-GE3 or SQ2303ES-T1_GE3.

Q: Why does PMV250EPEAR have a lower drain current rating (1.5A) than the original CPH3355-TL-H (2.5A)?

A: PMV250EPEAR is designed for different application requirements, specifically automotive-grade circuits with higher voltage tolerance (40V vs. 30V). The 1.5A rating reflects the device's optimization for lower-current switching applications. Substitution of PMV250EPEAR is valid only if the application circuit operates at or below 1.5A continuous drain current. Applications requiring the full 2.5A capability must select alternatives with matching or higher current ratings.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The original CPH3355-TL-H specifies 3.9 nC, while substitutes range from 6 nC to 9 nC. Higher gate charge increases switching losses and may require higher gate drive current or longer switching times. In applications with fixed gate drive capability, elevated gate charge may reduce maximum switching frequency. Circuit-level evaluation is necessary only if the design operates near maximum switching frequency limits; standard low-frequency switching applications (below 1 MHz) are unaffected.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All recommended substitute parts (SI2303CDS-T1-GE3, AO3409, PMV250EPEAR, and SQ2303ES-T1_GE3) are ROHS3 compliant. The original CPH3355-TL-H does not specify RoHS status. All parts carry REACH Unaffected or Vendor Undefined status, indicating compliance with environmental regulations.

Q: What is the difference between Ta and Tc temperature ratings?

A: Ta refers to ambient temperature, while Tc refers to case temperature. Specifications at Tc typically allow higher power dissipation because case temperature is lower than junction temperature under identical thermal conditions. For example, SI2303CDS-T1-GE3 dissipates 1W at Ta but 2.3W at Tc. Selection between Ta and Tc ratings depends on thermal management capability in the application circuit. Conservative designs use Ta ratings; designs with active cooling or thermal management may utilize Tc ratings.

Q: Can SQ2303ES-T1_GE3 be used in non-automotive applications?

A: Yes. SQ2303ES-T1_GE3 carries AEC-Q101 automotive qualification, indicating it meets automotive reliability standards. This qualification does not restrict use to automotive applications; it certifies the part meets higher reliability and testing requirements. Non-automotive applications benefit from the enhanced reliability margin provided by automotive qualification.

Q: What package variants are available for these substitutes?

A: All substitute parts are available in TO-236-3 / SOT-23-3 surface mount packages, matching the original CPH3355-TL-H form factor. Packaging options include Cut Tape (CT), Digi-Reel®, and Tape & Reel (TR) formats depending on manufacturer and distributor. Physical pin configuration and PCB footprint are identical across all parts, enabling direct PCB-level substitution without layout modification.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message