CPH3123-TL-E Equivalent & Substitute Parts

Part Overview

The CPH3123-TL-E is a Bipolar (BJT) Transistor manufactured by onsemi, classified as a PNP type device rated for 50 V collector-emitter breakdown voltage and 3 A maximum collector current. This surface mount component operates at a transition frequency of 390 MHz with a maximum power dissipation of 900 mW and is housed in a 3-CPH package (SC-96). The device is currently listed as obsolete, necessitating identification of equivalent and substitute parts for ongoing design requirements and production continuity.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Voltage - Collector Emitter Breakdown (Max)	50	V
Current - Collector (Ic) (Max)	3	A
Power - Max	900	mW
Frequency - Transition	390	MHz
Mounting Type	Surface Mount	—
Operating Temperature (TJ)	150	°C
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the CPH3123-TL-E is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor Type: PNP (mandatory match)
Voltage - Collector Emitter Breakdown (Max): 50 V or higher
Current - Collector (Ic) (Max): 3 A or higher
Power - Max: 900 mW or higher
Mounting Type: Surface Mount
Operating Temperature: 150°C or higher
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level: 1 (Unlimited)

Secondary Considerations:

Frequency - Transition: 390 MHz or higher preferred for RF applications
Package compatibility: SC-96 or equivalent surface mount packages
DC Current Gain (hFE): Minimum 200 @ specified conditions

Substitute parts are grouped into two categories:

Category A - Direct Electrical Equivalents (Full Parameter Match): Parts meeting or exceeding all primary substitution criteria with minimal derating.

Category B - Functional Substitutes (Reduced Current Rating): Parts with reduced maximum collector current (1 A to 2 A) suitable for applications not requiring full 3 A capability.

Parameter Comparison

Part Number	Manufacturer	Transistor Type	Ic (Max)	Vce Breakdown (Max)	Power (Max)	Frequency (Transition)	Operating Temp (TJ)	Product Status	RoHS Status
CPH3123-TL-E	onsemi	PNP	3 A	50 V	900 mW	390 MHz	150°C	Obsolete	ROHS3 Compliant
2SAR543RTL	Rohm Semiconductor	PNP	3 A	50 V	1 W	300 MHz	150°C	Active	ROHS3 Compliant
CPH3116-TL-E	onsemi	PNP	1 A	50 V	900 mW	420 MHz	150°C	Active	ROHS3 Compliant
NSS60200LT1G	onsemi	PNP	2 A	60 V	460 mW	100 MHz	−55°C ~ 150°C	Active	ROHS3 Compliant
2SA1037AKT146R	Rohm Semiconductor	PNP	150 mA	50 V	200 mW	140 MHz	150°C	Active	ROHS3 Compliant
2SA1037AKT146Q	Rohm Semiconductor	PNP	150 mA	50 V	200 mW	140 MHz	150°C	Active	ROHS3 Compliant

Engineering Selection Recommendations

For Direct Replacement (Full Current Capability):

The 2SAR543RTL manufactured by Rohm Semiconductor is the primary substitute for the CPH3123-TL-E. This device maintains identical maximum collector current (3 A) and collector-emitter breakdown voltage (50 V) specifications. The 2SAR543RTL exceeds the power dissipation requirement at 1 W versus 900 mW, providing additional thermal margin. The transition frequency of 300 MHz is lower than the original 390 MHz but remains suitable for most switching applications. The device is currently in active production status with ROHS3 compliance and unlimited moisture sensitivity level (MSL 1), ensuring long-term availability and regulatory compliance.

For Current-Limited Applications (1 A to 2 A):

The CPH3116-TL-E (onsemi) is suitable for applications requiring maximum collector current of 1 A. This device shares the same manufacturer and package family as the original part, with identical 50 V breakdown voltage and 900 mW power rating. The transition frequency of 420 MHz exceeds the original specification. Active production status ensures availability.

The NSS60200LT1G (onsemi) accommodates 2 A maximum collector current with an elevated 60 V breakdown voltage rating. This device provides additional voltage margin and operates across an extended temperature range (−55°C to 150°C). Power dissipation is reduced to 460 mW, suitable for lower-power applications. Active production status is confirmed.

For Low-Current Signal Applications (150 mA):

The 2SA1037AKT146R and 2SA1037AKT146Q (Rohm Semiconductor) are functionally equivalent to each other, both rated for 150 mA maximum collector current with 50 V breakdown voltage. These devices are suitable only for signal-level applications and are not appropriate for the full 3 A switching capability of the original part. Both variants are in active production with ROHS3 compliance.

Compliance and Availability:

All substitute parts listed maintain ROHS3 compliance and MSL 1 (unlimited) moisture sensitivity level, matching the original device specifications. All substitute parts are currently in active production status, ensuring long-term supply chain continuity.

Frequently Asked Questions (FAQ)

Q: Can the CPH3116-TL-E directly replace the CPH3123-TL-E in all applications?

A: The CPH3116-TL-E is suitable only for applications where the maximum collector current requirement does not exceed 1 A. The original CPH3123-TL-E is rated for 3 A maximum collector current. If your circuit requires the full 3 A capability, the CPH3116-TL-E will not function as a direct replacement. For applications operating at 1 A or below, the CPH3116-TL-E is electrically compatible.

Q: What is the primary advantage of the 2SAR543RTL over the CPH3123-TL-E?

A: The 2SAR543RTL maintains the same 3 A maximum collector current and 50 V breakdown voltage as the original part while providing increased power dissipation capability (1 W versus 900 mW). The device is in active production, ensuring availability. The transition frequency is reduced from 390 MHz to 300 MHz, which is acceptable for most switching applications but may not be suitable for high-frequency RF circuits operating above 300 MHz.

Q: Are there package compatibility issues when substituting these parts?

A: The CPH3123-TL-E uses a 3-CPH package (SC-96). The 2SAR543RTL uses a TSMT3 package, also in the SC-96 family. The CPH3116-TL-E uses a 3-CPH package compatible with TO-236-3, SC-59, and SOT-23-3 designations. Physical package dimensions may differ; verify PCB footprint compatibility before implementation. The NSS60200LT1G and 2SA1037 series use SOT-23-3 (TO-236) packages, which have different pin spacing than the original SC-96 package.

Q: Why is the NSS60200LT1G listed as a substitute if it has lower power dissipation?

A: The NSS60200LT1G is listed as a functional substitute for applications requiring 2 A maximum collector current. The reduced power dissipation (460 mW) indicates this device is optimized for lower-power switching applications. The elevated 60 V breakdown voltage provides additional voltage margin. This device is appropriate only when your application does not require the full 900 mW power capability of the original part.

Q: What is the difference between 2SA1037AKT146R and 2SA1037AKT146Q?

A: Both devices are electrically equivalent PNP transistors rated for 150 mA maximum collector current and 50 V breakdown voltage. The primary difference is the DC Current Gain (hFE) specification: the 2SA1037AKT146R has a minimum hFE of 180 @ 1 mA, 6V, while the 2SA1037AKT146Q has a minimum hFE of 120 @ 1 mA, 6V. Both are suitable only for signal-level applications and cannot replace the 3 A capability of the original part.

Q: Are all substitute parts RoHS compliant?

A: Yes. All substitute parts listed in this document maintain ROHS3 compliance status, matching the original CPH3123-TL-E specification. All parts also maintain MSL 1 (unlimited) moisture sensitivity level.

Q: Which substitute part should I select for a new design?

A: For new designs requiring 3 A maximum collector current at 50 V, select the 2SAR543RTL. This device is in active production, provides the required current capability, and maintains full electrical compatibility with the original specification. For designs requiring reduced current capability (1 A to 2 A), select the CPH3116-TL-E or NSS60200LT1G based on your specific current and voltage requirements.

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