CP775-CWDM3011P-WN Equivalent & Substitute Parts Reference

Part Overview

The Central Semiconductor Corp CP775-CWDM3011P-WN is a P-Channel MOSFET (Transistors, FETs, MOSFETs category) designed for surface mount applications. The key functional attributes include a drain-to-source voltage of 30 V, continuous drain current of 11A, and surface mount die configuration. This part is currently designated as “Obsolete.” For continued production and maintenance of assemblies using this model, identifying suitable alternative MOSFET components is required to ensure compatibility and supply continuity.

Key Parameters

Parameter	Value
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	20mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3100 pF @ 8 V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	Die
Package / Case	Die
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected

Substitute Part Grouping Explanation

Substitution compatibility is determined strictly by the following electrical and mechanical parameters: FET type, MOSFET technology, drain-to-source voltage (Vdss), continuous drain current (Id), drive voltage thresholds, Rds(on) and relevant measurement conditions, gate charge (Qg), threshold voltage (Vgs(th)), input capacitance (Ciss), maximum Vgs, operating temperature range, mounting type, and package. Environmental and compliance certifications also impact suitability as substitutes for regulated environments. Only parts matching these characteristics may be considered direct substitutes.

Parameter Comparison

Parameter	CP775-CWDM3011P-WN	CP802-CWDM3011P-WN
Manufacturer	Central Semiconductor Corp	Central Semiconductor Corp
FET Type	P-Channel	P-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	30 V
Current - Continuous Drain (Id) @ 25°C	11A (Ta)	11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	4.5V, 10V
Rds On (Max) @ Id, Vgs	20mOhm @ 11A, 10V	13mOhm @ 1A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 10 V	80 nC @ 10 V
Vgs (Max)	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	3100 pF @ 8 V	3100 pF @ 8 V
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Supplier Device Package	Die	Die
Package / Case	Die	Die
RoHS Status	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

For applications requiring replacement of CP775-CWDM3011P-WN, substitute parts must be selected strictly on the basis of product status and regulatory compliance. CP775-CWDM3011P-WN is classified as obsolete; CP802-CWDM3011P-WN is active and maintains ROHS3, MSL 1, and REACH unaffected certifications, matching all provided compliance and mounting criteria.

Frequently Asked Questions (FAQ)

Q1: What substitution criteria are used for CP775-CWDM3011P-WN?
Substitute parts are determined strictly by matching FET type, MOSFET technology, voltage and current ratings, drive voltage, threshold voltage, gate charge, input capacitance, package type, operating temperature, compliance, and mounting specifications.

Q2: Is CP802-CWDM3011P-WN functionally compatible as a substitute?
All provided parameters, including electrical characteristics and package details, match those specified for CP775-CWDM3011P-WN. Compliance certifications and mounting type also align.

Q3: Does device package affect interchangeability?
Both the main and substitute parts use the Die package with surface mount configuration, ensuring mechanical compatibility.

Q4: Are environmental certifications consistent between parts?
Both part numbers are ROHS3 Compliant, rated MSL 1, and REACH Unaffected, meeting identical environmental and handling requirements.

Q5: Can this substitute be used in applications requiring similar electrical performance?
Equivalent drain-to-source voltage, continuous drain current, gate charge, and threshold voltage ensure suitability for similar operational environments, based strictly on provided parameters.

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