CP773-CMPDM302PH-WN Equivalent & Substitute Parts

Part Overview

The CP773-CMPDM302PH-WN is a P-Channel MOSFET die manufactured by Central Semiconductor Corp, rated for 30V drain-to-source voltage with 2.4A continuous drain current at 25°C. This component is designed for surface mount applications in die form and operates across a temperature range of -55°C to 150°C.

The CP773-CMPDM302PH-WN carries an Obsolete product status. Identifying equivalent substitute parts is necessary to maintain design continuity, ensure supply chain reliability, and support ongoing production or repair requirements for systems utilizing this component.

Substiute Parts

CP773-CMPDM302PH-WN
Central Semiconductor CorpIn Stock: 929CP773-CMPDM302PH-WN Datasheet
CP773-CMPDM302PH-WN
Current Part
CP798X-CPDM302PH-WN
Central Semiconductor CorpIn Stock: 779CP798X-CPDM302PH-WN Datasheet
CP798X-CPDM302PH-WN
Direct

Key Parameters

Parameter Value Unit
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 2.4 A (Ta)
Rds On (Max) @ Id, Vgs 91 mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id 1.4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.6 nC @ 5V
Vgs (Max) 12 V
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 10V
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Surface Mount
Package / Case Die
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the CP773-CMPDM302PH-WN is determined by strict equivalence across the following critical parameters:

Electrical Specifications:

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id) @ 25°C: 2.4A (Ta)
  • On-State Resistance (Rds On): 91mOhm @ 1.2A, 4.5V
  • Gate Threshold Voltage (Vgs(th)): 1.4V @ 250µA
  • Gate Charge (Qg): 9.6nC @ 5V
  • Maximum Gate Voltage (Vgs): 12V
  • Input Capacitance (Ciss): 800pF @ 10V

Mechanical & Environmental Specifications:

  • Mounting Type: Surface Mount
  • Package Form: Die
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • RoHS Compliance: ROHS3 Compliant
  • Moisture Sensitivity Level: 1 (Unlimited)

A substitute part must match all electrical parameters and maintain compatibility with the die package form and surface mount application requirements.

Parameter Comparison

Parameter CP773-CMPDM302PH-WN (Main) CP798X-CPDM302PH-WN (Substitute) Match Status
FET Type P-Channel P-Channel Equivalent
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) Equivalent
Drain to Source Voltage (Vdss) 30V 30V Equivalent
Current - Continuous Drain (Id) @ 25°C 2.4A (Ta) 2.4A (Ta) Equivalent
Rds On (Max) @ Id, Vgs 91mOhm @ 1.2A, 4.5V 91mOhm @ 1.2A, 4.5V Equivalent
Vgs(th) (Max) @ Id 1.4V @ 250µA 1.4V @ 250µA Equivalent
Gate Charge (Qg) (Max) @ Vgs 9.6nC @ 5V 9.6nC @ 5V Equivalent
Vgs (Max) 12V 12V Equivalent
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 10V 800pF @ 10V Equivalent
Operating Temperature Range -55°C to 150°C (TJ) -55°C to 150°C (TJ) Equivalent
Mounting Type Surface Mount Surface Mount Equivalent
Package / Case Die Die Equivalent
RoHS Status ROHS3 Compliant ROHS3 Compliant Equivalent
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) Equivalent
Product Status Obsolete Active Substitute is Active

Engineering Selection Recommendations

The CP798X-CPDM302PH-WN is a direct electrical and mechanical equivalent to the CP773-CMPDM302PH-WN. All specified electrical parameters, operating temperature range, package form, and compliance certifications are identical between the two parts.

The primary distinction is product status: the CP773-CMPDM302PH-WN is classified as Obsolete, while the CP798X-CPDM302PH-WN maintains Active status. This status difference indicates that the CP798X-CPDM302PH-WN is currently manufactured and supported by Central Semiconductor Corp, ensuring ongoing availability and supply chain continuity.

Both parts are ROHS3 Compliant and carry Moisture Sensitivity Level 1 (Unlimited), confirming equivalent environmental and regulatory compliance. The CP798X-CPDM302PH-WN is suitable for direct substitution in applications currently utilizing the CP773-CMPDM302PH-WN without modification to circuit design or layout.

Frequently Asked Questions (FAQ)

Q: Can the CP798X-CPDM302PH-WN be used as a direct replacement for the CP773-CMPDM302PH-WN?

A: Yes. All electrical specifications, including Vdss, Id, Rds On, Vgs(th), gate charge, and input capacitance are identical. Both components are P-Channel MOSFETs in die form with identical operating temperature ranges and compliance certifications. Direct substitution is supported without circuit modification.

Q: What is the difference between these two part numbers?

A: The CP773-CMPDM302PH-WN is classified as Obsolete, while the CP798X-CPDM302PH-WN is Active. Both are manufactured by Central Semiconductor Corp and share identical electrical and mechanical specifications. The Active status of the CP798X-CPDM302PH-WN ensures current manufacturing and supply availability.

Q: Are there any package or mounting differences?

A: No. Both parts are supplied as Surface Mount Dies with identical package form. No layout or assembly modifications are required when substituting between these components.

Q: Do both parts meet the same compliance standards?

A: Yes. Both the CP773-CMPDM302PH-WN and CP798X-CPDM302PH-WN are ROHS3 Compliant with Moisture Sensitivity Level 1 (Unlimited). Environmental and regulatory compliance is equivalent.

Q: What is the current inventory status?

A: The CP773-CMPDM302PH-WN has 898 pieces in stock (Obsolete status). The CP798X-CPDM302PH-WN has 764 pieces in stock (Active status). For new designs or ongoing production, the Active part is recommended to ensure long-term supply continuity.

Q: Are the electrical characteristics identical at all operating points?

A: Yes. All specified electrical parameters are identical, including drain-to-source voltage rating (30V), continuous drain current (2.4A @ 25°C), on-state resistance (91mOhm @ 1.2A, 4.5V), gate threshold voltage (1.4V @ 250µA), gate charge (9.6nC @ 5V), maximum gate voltage (12V), and input capacitance (800pF @ 10V). Operating temperature range is also identical (-55°C to 150°C TJ).

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