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CP773-CMPDM302PH-WN Equivalent & Substitute Parts
Part Overview
The CP773-CMPDM302PH-WN is a P-Channel MOSFET die manufactured by Central Semiconductor Corp, rated for 30V drain-to-source voltage with 2.4A continuous drain current at 25°C. This component is designed for surface mount applications in die form and operates across a temperature range of -55°C to 150°C.
The CP773-CMPDM302PH-WN carries an Obsolete product status. Identifying equivalent substitute parts is necessary to maintain design continuity, ensure supply chain reliability, and support ongoing production or repair requirements for systems utilizing this component.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | P-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 30 | V |
| Current - Continuous Drain (Id) @ 25°C | 2.4 | A (Ta) |
| Rds On (Max) @ Id, Vgs | 91 | mOhm @ 1.2A, 4.5V |
| Vgs(th) (Max) @ Id | 1.4 | V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 9.6 | nC @ 5V |
| Vgs (Max) | 12 | V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 | pF @ 10V |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Mounting Type | Surface Mount | — |
| Package / Case | Die | — |
| RoHS Status | ROHS3 Compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the CP773-CMPDM302PH-WN is determined by strict equivalence across the following critical parameters:
Electrical Specifications:
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Continuous Drain Current (Id) @ 25°C: 2.4A (Ta)
- On-State Resistance (Rds On): 91mOhm @ 1.2A, 4.5V
- Gate Threshold Voltage (Vgs(th)): 1.4V @ 250µA
- Gate Charge (Qg): 9.6nC @ 5V
- Maximum Gate Voltage (Vgs): 12V
- Input Capacitance (Ciss): 800pF @ 10V
Mechanical & Environmental Specifications:
- Mounting Type: Surface Mount
- Package Form: Die
- Operating Temperature Range: -55°C to 150°C (TJ)
- RoHS Compliance: ROHS3 Compliant
- Moisture Sensitivity Level: 1 (Unlimited)
A substitute part must match all electrical parameters and maintain compatibility with the die package form and surface mount application requirements.
Parameter Comparison
| Parameter | CP773-CMPDM302PH-WN (Main) | CP798X-CPDM302PH-WN (Substitute) | Match Status |
|---|---|---|---|
| FET Type | P-Channel | P-Channel | Equivalent |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Equivalent |
| Drain to Source Voltage (Vdss) | 30V | 30V | Equivalent |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) | 2.4A (Ta) | Equivalent |
| Rds On (Max) @ Id, Vgs | 91mOhm @ 1.2A, 4.5V | 91mOhm @ 1.2A, 4.5V | Equivalent |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA | 1.4V @ 250µA | Equivalent |
| Gate Charge (Qg) (Max) @ Vgs | 9.6nC @ 5V | 9.6nC @ 5V | Equivalent |
| Vgs (Max) | 12V | 12V | Equivalent |
| Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 10V | 800pF @ 10V | Equivalent |
| Operating Temperature Range | -55°C to 150°C (TJ) | -55°C to 150°C (TJ) | Equivalent |
| Mounting Type | Surface Mount | Surface Mount | Equivalent |
| Package / Case | Die | Die | Equivalent |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | Equivalent |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | Equivalent |
| Product Status | Obsolete | Active | Substitute is Active |
Engineering Selection Recommendations
The CP798X-CPDM302PH-WN is a direct electrical and mechanical equivalent to the CP773-CMPDM302PH-WN. All specified electrical parameters, operating temperature range, package form, and compliance certifications are identical between the two parts.
The primary distinction is product status: the CP773-CMPDM302PH-WN is classified as Obsolete, while the CP798X-CPDM302PH-WN maintains Active status. This status difference indicates that the CP798X-CPDM302PH-WN is currently manufactured and supported by Central Semiconductor Corp, ensuring ongoing availability and supply chain continuity.
Both parts are ROHS3 Compliant and carry Moisture Sensitivity Level 1 (Unlimited), confirming equivalent environmental and regulatory compliance. The CP798X-CPDM302PH-WN is suitable for direct substitution in applications currently utilizing the CP773-CMPDM302PH-WN without modification to circuit design or layout.
Frequently Asked Questions (FAQ)
Q: Can the CP798X-CPDM302PH-WN be used as a direct replacement for the CP773-CMPDM302PH-WN?
A: Yes. All electrical specifications, including Vdss, Id, Rds On, Vgs(th), gate charge, and input capacitance are identical. Both components are P-Channel MOSFETs in die form with identical operating temperature ranges and compliance certifications. Direct substitution is supported without circuit modification.
Q: What is the difference between these two part numbers?
A: The CP773-CMPDM302PH-WN is classified as Obsolete, while the CP798X-CPDM302PH-WN is Active. Both are manufactured by Central Semiconductor Corp and share identical electrical and mechanical specifications. The Active status of the CP798X-CPDM302PH-WN ensures current manufacturing and supply availability.
Q: Are there any package or mounting differences?
A: No. Both parts are supplied as Surface Mount Dies with identical package form. No layout or assembly modifications are required when substituting between these components.
Q: Do both parts meet the same compliance standards?
A: Yes. Both the CP773-CMPDM302PH-WN and CP798X-CPDM302PH-WN are ROHS3 Compliant with Moisture Sensitivity Level 1 (Unlimited). Environmental and regulatory compliance is equivalent.
Q: What is the current inventory status?
A: The CP773-CMPDM302PH-WN has 898 pieces in stock (Obsolete status). The CP798X-CPDM302PH-WN has 764 pieces in stock (Active status). For new designs or ongoing production, the Active part is recommended to ensure long-term supply continuity.
Q: Are the electrical characteristics identical at all operating points?
A: Yes. All specified electrical parameters are identical, including drain-to-source voltage rating (30V), continuous drain current (2.4A @ 25°C), on-state resistance (91mOhm @ 1.2A, 4.5V), gate threshold voltage (1.4V @ 250µA), gate charge (9.6nC @ 5V), maximum gate voltage (12V), and input capacitance (800pF @ 10V). Operating temperature range is also identical (-55°C to 150°C TJ).
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