CP771-CXDM4060P-WN MOSFET P-Channel Equivalent & Substitute Parts

Part Overview

The CP771-CXDM4060P-WN is a P-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 40V drain-to-source voltage with 6A continuous drain current in a surface mount die package. This component is classified as obsolete, necessitating identification of active equivalent parts to maintain design continuity and ensure long-term supply chain reliability. Substitute parts must maintain functional compatibility across critical electrical parameters while meeting current manufacturing and compliance standards.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	40	V
Current - Continuous Drain (Id) @ 25°C	6	A
Rds On (Max)	65	mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	3	V @ 250µA
Vgs (Max)	±25	V
Gate Charge (Qg) (Max) @ Vgs	6.5	nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	750	pF @ 25V
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package Type	Die	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the obsolete CP771-CXDM4060P-WN is determined by equivalence across the following critical parameters:

Electrical Compatibility Criteria:

FET Type: P-Channel topology must be maintained
Technology: MOSFET (Metal Oxide) construction required
Drain to Source Voltage (Vdss): Minimum 40V rating required
Continuous Drain Current (Id): Minimum 6A at 25°C required
Gate Threshold Voltage (Vgs(th)): Maximum 3V @ 250µA required
Maximum Gate Voltage (Vgs): Minimum ±20V required

Physical & Environmental Compatibility Criteria:

Mounting Type: Surface Mount Die package required
Operating Temperature Range: -55°C to 150°C (TJ) required
Moisture Sensitivity Level: MSL 1 (Unlimited) required
RoHS Compliance: ROHS3 Compliant required

The CP805-CXDM4060P-WN meets all substitution criteria as an active product with enhanced electrical performance characteristics.

Parameter Comparison

Parameter	CP771-CXDM4060P-WN (Main Part)	CP805-CXDM4060P-WN (Substitute)	Compatibility Status
FET Type	P-Channel	P-Channel	Equivalent
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	Equivalent
Drain to Source Voltage (Vdss)	40 V	40 V	Equivalent
Current - Continuous Drain (Id) @ 25°C	6 A	6.4 A	Compatible (Higher Rating)
Rds On (Max)	65 mOhm @ 6A, 10V	31 mOhm @ 1A, 10V	Compatible (Lower Resistance)
Vgs(th) (Max) @ Id	3 V @ 250µA	3 V @ 250µA	Equivalent
Vgs (Max)	±25 V	±20 V	Compatible (Meets Minimum)
Operating Temperature Range	-55 to 150 °C (TJ)	-55 to 150 °C (TJ)	Equivalent
Mounting Type	Surface Mount Die	Surface Mount Die	Equivalent
Package Type	Die	Die	Equivalent
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Equivalent
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	Equivalent
Product Status	Obsolete	Active	Upgrade Path

Engineering Selection Recommendations

The CP805-CXDM4060P-WN is the direct substitute for the obsolete CP771-CXDM4060P-WN based on the following engineering criteria:

Product Status & Supply Chain: The CP771-CXDM4060P-WN is classified as obsolete, creating supply chain risk. The CP805-CXDM4060P-WN maintains active product status with current manufacturing support and documented inventory availability (872 pieces in stock).

Electrical Performance: The substitute part exceeds the minimum electrical requirements of the original part. The continuous drain current rating increases from 6A to 6.4A, and the on-resistance decreases from 65 mOhm to 31 mOhm, both representing performance improvements that enhance thermal efficiency and current handling capability.

Compliance & Certifications: Both parts maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating. The substitute part carries EAR99 export classification and HTSUS code 8541.29.0040, indicating current regulatory alignment.

Physical Compatibility: Both parts utilize identical surface mount die packaging and maintain the same operating temperature range (-55°C to 150°C TJ), ensuring mechanical and thermal compatibility in existing designs.

Frequently Asked Questions (FAQ)

Q: Can the CP805-CXDM4060P-WN directly replace the CP771-CXDM4060P-WN in existing designs?

A: Yes. Both parts are P-Channel MOSFETs with identical 40V Vdss ratings, equivalent gate threshold voltages, and matching surface mount die packages. The substitute part meets or exceeds all critical electrical parameters required for functional equivalence.

Q: What are the key differences between these two parts?

A: The primary differences are product status (obsolete versus active), continuous drain current rating (6A versus 6.4A), on-resistance specification (65 mOhm versus 31 mOhm), and maximum gate voltage (±25V versus ±20V). The substitute part provides improved electrical performance while maintaining functional compatibility.

Q: Are there any thermal or power dissipation concerns when substituting?

A: The lower on-resistance of the CP805-CXDM4060P-WN (31 mOhm versus 65 mOhm) results in reduced power dissipation during operation, which is beneficial for thermal management. Both parts operate across the same temperature range (-55°C to 150°C TJ).

Q: Do both parts have the same moisture sensitivity requirements?

A: Yes. Both the CP771-CXDM4060P-WN and CP805-CXDM4060P-WN are rated MSL 1 (Unlimited), indicating no moisture sensitivity limitations for storage or handling.

Q: Is the gate voltage specification difference significant?

A: The substitute part specifies ±20V maximum gate voltage compared to ±25V for the original part. This difference is not significant for standard applications, as ±20V exceeds typical gate drive voltage requirements in most circuit designs. Verify gate drive voltage in your specific application does not exceed ±20V.

Q: What is the inventory status for the substitute part?

A: The CP805-CXDM4060P-WN is an active product with 872 pieces currently in stock, ensuring reliable supply availability compared to the obsolete CP771-CXDM4060P-WN.

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