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CP373-CMPDM303NH-WN N-Channel MOSFET Equivalent & Substitute Parts
Part Overview
The CP373-CMPDM303NH-WN is an N-Channel MOSFET manufactured by Central Semiconductor Corp, rated for 30V drain-to-source voltage with 3.6A continuous drain current at 25°C. This component is supplied as a surface mount die package and is classified as obsolete. Due to its obsolete product status, identifying equivalent substitute parts with matching electrical and mechanical specifications is essential for design continuity and procurement planning. The substitute part CP398X-CPDM303NH-WN provides functional equivalence while maintaining active product status.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 30 | V |
| Continuous Drain Current (Id) @ 25°C | 3.6 | A (Ta) |
| Rds On (Max) @ 1.8A, 2.5V | 78 | mOhm |
| Vgs(th) (Max) @ 250µA | 1.2 | V |
| Gate Charge (Qg) (Max) @ 4.5V | 13 | nC |
| Input Capacitance (Ciss) (Max) @ 10V | 590 | pF |
| Vgs (Max) | 12 | V |
| Operating Temperature Range | −55 to 150 | °C (TJ) |
| Mounting Type | Surface Mount | — |
| Package Type | Die | — |
| RoHS Status | ROHS3 Compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the CP373-CMPDM303NH-WN with the CP398X-CPDM303NH-WN is based on electrical and mechanical parameter equivalence. The following criteria determine substitutability:
Electrical Parameters (Must Match):
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Continuous Drain Current (Id) @ 25°C: 3.6A (Ta)
- Rds On (Max) @ 1.8A, 2.5V: 78 mOhm
- Vgs(th) (Max) @ 250µA: 1.2V
- Gate Charge (Qg) (Max) @ 4.5V: 13 nC
- Input Capacitance (Ciss) (Max) @ 10V: 590 pF
- Vgs (Max): 12V
- Operating Temperature Range: −55°C to 150°C (TJ)
Mechanical Parameters (Must Match):
- Mounting Type: Surface Mount
- Package Type: Die
Compliance Parameters:
- RoHS Status: ROHS3 Compliant
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
The substitute part CP398X-CPDM303NH-WN satisfies all electrical and mechanical requirements and maintains equivalent compliance certifications.
Parameter Comparison
| Parameter | CP373-CMPDM303NH-WN (Main Part) | CP398X-CPDM303NH-WN (Substitute) | Match Status |
|---|---|---|---|
| Manufacturer | Central Semiconductor Corp | Central Semiconductor Corp | Identical |
| FET Type | N-Channel | N-Channel | Identical |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Identical |
| Vdss | 30V | 30V | Identical |
| Id @ 25°C | 3.6A (Ta) | 3.6A (Ta) | Identical |
| Rds On (Max) @ 1.8A, 2.5V | 78 mOhm | 78 mOhm | Identical |
| Vgs(th) (Max) @ 250µA | 1.2V | 1.2V | Identical |
| Qg (Max) @ 4.5V | 13 nC | 13 nC | Identical |
| Ciss (Max) @ 10V | 590 pF | 590 pF | Identical |
| Vgs (Max) | 12V | 12V | Identical |
| Operating Temperature | −55°C to 150°C (TJ) | −55°C to 150°C (TJ) | Identical |
| Mounting Type | Surface Mount | Surface Mount | Identical |
| Package Type | Die | Die | Identical |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | Identical |
| MSL | 1 (Unlimited) | 1 (Unlimited) | Identical |
| Product Status | Obsolete | Active | Substitute is Active |
Engineering Selection Recommendations
The CP398X-CPDM303NH-WN is the direct substitute for the obsolete CP373-CMPDM303NH-WN. Selection is based on the following engineering criteria:
Electrical Equivalence: All electrical parameters are identical, including Vdss, Id, Rds On, threshold voltage, gate charge, and input capacitance. The devices are functionally interchangeable in circuit applications.
Mechanical Compatibility: Both components are supplied as surface mount die packages with identical mounting specifications and thermal operating ranges (−55°C to 150°C).
Compliance and Certification: Both parts maintain ROHS3 compliance and MSL Level 1 (Unlimited) moisture sensitivity rating, ensuring compatibility with modern manufacturing and environmental standards.
Product Status Advantage: The substitute part CP398X-CPDM303NH-WN carries active product status, ensuring long-term availability and supply chain continuity compared to the obsolete main part.
Inventory Availability: The substitute part is currently in stock with 812 pieces available, supporting immediate procurement requirements.
Frequently Asked Questions (FAQ)
Q: Can CP398X-CPDM303NH-WN directly replace CP373-CMPDM303NH-WN in existing designs?
A: Yes. All electrical parameters, mechanical specifications, and compliance certifications are identical. Direct substitution is supported without circuit modification.
Q: Are there any differences in thermal performance between these parts?
A: No. Both parts operate across the identical temperature range of −55°C to 150°C (TJ). Thermal characteristics are equivalent.
Q: What is the significance of the product status difference (Obsolete vs. Active)?
A: The main part CP373-CMPDM303NH-WN is obsolete and subject to discontinuation. The substitute CP398X-CPDM303NH-WN maintains active status, ensuring continued availability and support from the manufacturer.
Q: Do both parts meet the same RoHS and environmental standards?
A: Yes. Both parts are ROHS3 compliant and carry MSL Level 1 (Unlimited) rating, meeting current environmental and manufacturing standards.
Q: Is the die package identical for both parts?
A: Yes. Both components are supplied as surface mount die packages with identical specifications and handling requirements.
Q: What are the key electrical parameters that define substitutability for this MOSFET?
A: Substitutability is determined by matching Vdss (30V), Id (3.6A), Rds On (78 mOhm), Vgs(th) (1.2V), gate charge (13 nC), and input capacitance (590 pF). All these parameters are identical between the main part and substitute.
Q: Are there any REACH or additional compliance considerations?
A: The substitute part CP398X-CPDM303NH-WN carries REACH Unaffected status, confirming compliance with chemical substance regulations. The main part specifications do not include REACH status documentation.
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