Equivalent & Substitute Parts for CP243-CM5943-WN

Part Overview

The Central Semiconductor Corp CP243-CM5943-WN is an NPN RF transistor specifically designed for operation up to 2.4GHz, with a collector-emitter breakdown voltage of 30V and a maximum collector current of 400mA. It features a noise figure of 8dB at 200MHz and a DC current gain (hFE) minimum of 25 at 50mA, 15V. The device is provided as a die for surface-mount assembly and is now classified as obsolete. Due to obsolete status, identifying suitable equivalent or substitute transistors within the same category is essential to maintain system longevity and ensure continued availability for repairs or new design requirements.

Substiute Parts

CP243-CM5943-WN
Central Semiconductor CorpIn Stock: 743CP243-CM5943-WN Datasheet
CP243-CM5943-WN
Current Part
BFS17NTA
Diodes IncorporatedIn Stock: 15179BFS17NTA Datasheet
BFS17NTA
Similar
MAPR-000912-500S00
MACOM Technology SolutionsIn Stock: 1006MAPR-000912-500S00 Datasheet
MAPR-000912-500S00
Similar

Key Parameters

ParameterValue
Manufacturer Part NumberCP243-CM5943-WN
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)30V
Frequency - Transition2.4GHz
Noise Figure (dB Typ @ f)8dB @ 200MHz
Gain11.4dB
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 50mA, 15V
Current - Collector (Ic) (Max)400mA
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseDie

Substitute Part Grouping Explanation

Substitute parts are selected strictly by matching the following key parameters, as provided:

  • Category: Transistors, Bipolar (BJT)
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max)
  • Frequency - Transition (if specified)
  • Current - Collector (Ic, Max)
  • DC Current Gain (hFE), where value is given
  • Mounting Type and Package / Case (where provided)
  • Operating Temperature range

Only substitute parts with explicit, matching or compatible parameters in these fields are presented.

Parameter Comparison

Parameter CP243-CM5943-WN BFS17NTA MAPR-000912-500S00
Transistor TypeNPNNPNNPN
Voltage - Collector Emitter Breakdown (Max)30V11V80V
Frequency - Transition2.4GHz3.2GHz-
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 50mA, 15V56 @ 5mA, 10V-
Current - Collector (Ic) (Max)400mA50mA52.5A
Gain11.4dB-9.44dB ~ 9.77dB
Operating Temperature-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)200°C (TJ)
Mounting TypeSurface MountSurface MountChassis Mount
Package / CaseDieTO-236-3, SC-59, SOT-23-3-

Engineering Selection Recommendations

  • CP243-CM5943-WN is obsolete; only active substitute parts are considered.
  • BFS17NTA and MAPR-000912-500S00 are both REACH and RoHS compliant.
  • BFS17NTA is supplied in a surface-mount SOT-23-3 package; MAPR-000912-500S00 is chassis-mount.
  • Obsolescence status and compliance (RoHS, REACH, MSL) are provided for all listed substitutes.

Frequently Asked Questions (FAQ)

Q1: Which electrical parameters are critical to consider when selecting an equivalent or substitute NPN RF transistor?
A1: The key electrical parameters are transistor type (NPN), voltage - collector emitter breakdown (max), frequency - transition, current - collector (max), DC current gain (hFE), gain, and operating temperature.

Q2: Is package or mounting type significant for substitution?
A2: Yes, mounting type (surface mount vs chassis mount) and package compatibility are critical to ensure proper mechanical and electrical fit in the application.

Q3: What compliance certifications are provided for substitute parts?
A3: Substitute parts BFS17NTA and MAPR-000912-500S00 are listed as RoHS3 compliant and REACH unaffected.

Q4: How does product status affect part selection?
A4: The main part, CP243-CM5943-WN, is obsolete. Substitute selections are chosen from active inventory to ensure continued supply.

Q5: Are all parameters provided for direct one-to-one substitution?
A5: Only parameters explicitly listed are compared. Any parameter not provided is not considered in equivalency assessment.

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