CNW11AV3 Optoisolator Equivalent & Substitute Parts

Part Overview

The CNW11AV3 is an optoisolator transistor with base output manufactured by onsemi, designed for galvanic isolation applications requiring 4000Vrms isolation voltage. This component features a single channel configuration in a 6-DIP through-hole package with transistor output and base connection capability. The part is currently classified as obsolete, making identification of functionally equivalent alternatives essential for ongoing system support and new design implementations.

Substiute Parts

CNW11AV3
onsemiIn Stock: 1142CNW11AV3 Datasheet
CNW11AV3
Current Part
CNY173M
onsemiIn Stock: 51934CNY173M Datasheet
CNY173M
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4N35
onsemiIn Stock: 979644N35 Datasheet
4N35
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4N37
Vishay Semiconductor Opto DivisionIn Stock: 190924N37 Datasheet
4N37
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Key Parameters

Parameter CNW11AV3
Manufacturer onsemi
Category Optoisolators
Number of Channels 1
Voltage - Isolation 4000Vrms
Current Transfer Ratio (Min) 20% @ 10mA
Output Type Transistor with Base
Voltage - Output (Max) 70V
Current - Output / Channel 100mA
Vce Saturation (Max) 400mV
Mounting Type Through Hole
Package / Case 6-DIP (0.400", 10.16mm)
Product Status Obsolete
RoHS Status RoHS non-compliant

Substitute Part Grouping Explanation

Substitution of the CNW11AV3 optoisolator is determined by the following critical parameters:

Primary Substitution Criteria:

  • Single channel configuration
  • Transistor output with base connection
  • Through-hole 6-DIP package mounting
  • Isolation voltage rating of 4000Vrms or higher
  • Output voltage capability of 30V or higher
  • Output current capability of 50mA or higher

Secondary Compatibility Factors:

  • Current transfer ratio minimum of 20% or higher at 10mA input
  • Vce saturation rating of 400mV or lower
  • DC input type
  • RoHS and REACH compliance status for new designs

The three substitute parts identified (CNY173M, 4N35, 4N37) meet the primary substitution criteria while offering improved or equivalent electrical performance characteristics.

Parameter Comparison

Parameter CNW11AV3 CNY173M 4N35 4N37
Manufacturer onsemi onsemi onsemi Vishay Semiconductor Opto Division
Number of Channels 1 1 1 1
Voltage - Isolation 4000Vrms 4170Vrms 5300Vrms 5000Vrms
Current Transfer Ratio (Min) 20% @ 10mA 100% @ 10mA 100% @ 10mA 100% @ 10mA
Output Type Transistor with Base Transistor with Base Transistor with Base Transistor with Base
Voltage - Output (Max) 70V 70V 30V 30V
Current - Output / Channel 100mA 50mA Not specified 50mA
Vce Saturation (Max) 400mV 400mV 300mV Not specified
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case 6-DIP (0.400", 10.16mm) 6-DIP (0.300", 7.62mm) 6-DIP (0.300", 7.62mm) 6-DIP (0.300", 7.62mm)
Product Status Obsolete Active Obsolete Active
RoHS Status RoHS non-compliant ROHS3 Compliant Not specified ROHS3 Compliant

Engineering Selection Recommendations

CNY173M (onsemi): This substitute offers the closest electrical match with 4170Vrms isolation voltage, matching the 70V output voltage capability of the CNW11AV3. The part is currently in active production status with ROHS3 compliance, making it suitable for new designs and long-term availability. The 6-DIP package dimension of 0.300" (7.62mm) is physically smaller than the original CNW11AV3 at 0.400" (10.16mm), requiring PCB layout verification. Current transfer ratio of 100% at 10mA exceeds the CNW11AV3 minimum of 20%, providing improved performance margin. Output current is rated at 50mA, which is lower than the original 100mA specification.

4N35 (onsemi): This substitute provides higher isolation voltage at 5300Vrms with improved Vce saturation of 300mV. However, the maximum output voltage is limited to 30V, which is significantly lower than the CNW11AV3 specification of 70V. This part is classified as obsolete, limiting future availability. The 6-DIP package dimension matches CNY173M at 0.300" (7.62mm).

4N37 (Vishay Semiconductor Opto Division): This substitute offers 5000Vrms isolation voltage with active production status and ROHS3 compliance. The maximum output voltage is 30V, matching the 4N35 limitation. Output current is rated at 50mA. The 6-DIP package dimension is 0.300" (7.62mm). Turn-on and turn-off times are specified at 10µs each, which is slower than the CNY173M at 2µs and 3µs respectively.

For applications requiring the full 70V output voltage capability of the CNW11AV3, CNY173M is the only viable substitute among the three options. For applications with maximum output voltage requirements of 30V or lower, both 4N35 and 4N37 are functionally equivalent, with 4N37 offering the advantage of active production status and RoHS compliance.

Frequently Asked Questions (FAQ)

Q: Can CNY173M directly replace CNW11AV3 in existing PCB designs?

A: CNY173M is electrically compatible with CNW11AV3 for applications requiring up to 70V output voltage. However, the package body dimension differs: CNW11AV3 is 0.400" (10.16mm) while CNY173M is 0.300" (7.62mm). PCB footprint verification is required before substitution. Pin configuration and functional pinout must be confirmed to match the original design.

Q: What is the primary limitation when substituting 4N35 or 4N37 for CNW11AV3?

A: Both 4N35 and 4N37 have a maximum output voltage rating of 30V, compared to CNW11AV3's 70V capability. These substitutes are suitable only for applications where the output voltage does not exceed 30V. If the original design requires the full 70V output voltage range, these parts are not compatible.

Q: Why is CNY173M recommended over 4N35 for new designs?

A: CNY173M is in active production status with ROHS3 compliance, ensuring long-term availability and regulatory compliance for new product designs. The 4N35 is classified as obsolete, which may result in supply constraints and lack of manufacturer support. Additionally, CNY173M maintains the 70V output voltage capability of the original CNW11AV3.

Q: Are there package dimension considerations when substituting these parts?

A: Yes. The CNW11AV3 uses a 6-DIP package with 0.400" (10.16mm) body width. All three substitutes (CNY173M, 4N35, 4N37) use a smaller 6-DIP package with 0.300" (7.62mm) body width. While the pin pitch and functional pinout remain compatible, the physical footprint is smaller. PCB layout and mechanical clearance must be verified to ensure the smaller package does not create spacing conflicts with adjacent components.

Q: What is the difference in current transfer ratio between CNW11AV3 and the substitute parts?

A: CNW11AV3 specifies a minimum current transfer ratio of 20% at 10mA input current. All three substitute parts (CNY173M, 4N35, 4N37) specify a minimum current transfer ratio of 100% at 10mA input current. This means the substitutes require significantly less input current to achieve the same output performance, providing improved efficiency and reduced input circuit loading.

Q: Can 4N37 be used as a substitute if 4N35 is unavailable?

A: Yes, 4N37 and 4N35 are functionally equivalent for applications with maximum output voltage requirements of 30V or lower. Both parts feature transistor output with base connection, single channel configuration, and 6-DIP through-hole packaging. The primary difference is manufacturer: 4N35 is manufactured by onsemi while 4N37 is manufactured by Vishay Semiconductor Opto Division. 4N37 offers the advantage of active production status and RoHS compliance.

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